JP6311900B2 - 薄膜トランジスタ基板の製造方法 - Google Patents
薄膜トランジスタ基板の製造方法 Download PDFInfo
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- JP6311900B2 JP6311900B2 JP2016525702A JP2016525702A JP6311900B2 JP 6311900 B2 JP6311900 B2 JP 6311900B2 JP 2016525702 A JP2016525702 A JP 2016525702A JP 2016525702 A JP2016525702 A JP 2016525702A JP 6311900 B2 JP6311900 B2 JP 6311900B2
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- 239000000758 substrate Substances 0.000 title claims description 82
- 239000010409 thin film Substances 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 25
- 239000010408 film Substances 0.000 claims description 332
- 239000010949 copper Substances 0.000 claims description 107
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 98
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 98
- 239000004065 semiconductor Substances 0.000 claims description 51
- 229910045601 alloy Inorganic materials 0.000 claims description 30
- 239000000956 alloy Substances 0.000 claims description 30
- 230000015572 biosynthetic process Effects 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 145
- 230000002159 abnormal effect Effects 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 13
- 238000000137 annealing Methods 0.000 description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Description
まず、TFT基板が用いられる表示装置の一例として、有機EL表示装置の構成について説明する。
図1は、実施の形態に係る有機EL表示装置の一部切り欠き斜視図である。図2は、実施の形態に係る有機EL表示装置のピクセルバンクの例を示す斜視図である。
次に、実施の形態に係るTFT基板の構成について、図4及び図5を用いて説明する。図4は、実施の形態に係るTFT基板における一画素のレイアウトを示す模式図である。図5は、図4のA−A’線におけるTFT基板の断面図である。
次に、実施の形態に係るTFT基板1の製造方法について、図8A〜図8Iを用いて説明する。図8A〜図8Iは、実施の形態に係る薄膜トランジスタ基板の製造方法における各工程の断面図である。
ここで、本開示に至った経緯を含めて、本開示の特徴となる絶縁層8の成膜条件について詳細に説明する。
以上、薄膜トランジスタ基板、薄膜トランジスタ基板の製造方法及び有機EL表示装置について、実施の形態に基づいて説明したが、本発明は、上記実施の形態に限定されるものではない。
2 基板
3、G1、G2 ゲート電極
4 ゲート絶縁膜
5 酸化物半導体層
6、8 絶縁層
7S、S1、S2 ソース電極
7D、D1、D2 ドレイン電極
71S、71D、151 Cu膜
72S、72D、152 CuMn合金膜
73S、73D、153 下地膜
81 第1のシリコン酸化膜
82 第2のシリコン酸化膜
83 酸化アルミニウム膜
100 有機EL表示装置
110 画素
110R、110G、110B サブ画素
111 バンク
120 画素回路
130 有機EL素子
131 陽極
132 EL層
133 陰極
140 ゲート配線
150 ソース配線
160 電源配線
SwTr、DrTr 薄膜トランジスタ
C キャパシタ
CH1、CH2 コンタクトホール
Claims (4)
- 酸化物半導体層を有する薄膜トランジスタを備える薄膜トランジスタ基板の製造方法であって、
基板の上方に、銅膜及び当該銅膜上のキャップ膜を含む積層膜からなる銅配線を形成する工程と、
前記銅配線の上に絶縁層を成膜する工程と、
前記絶縁層を成膜した後に、290℃を越える温度で熱処理をする工程とを含み、
前記絶縁層を成膜する工程は、
290℃以下の成膜温度で第1のシリコン酸化膜を成膜する工程と、
290℃以下の成膜温度で前記第1のシリコン酸化膜の上方に第2のシリコン酸化膜を成膜する工程とを含み、
前記第1のシリコン酸化膜と前記第2のシリコン酸化膜との合計膜厚は、460nm以上である
薄膜トランジスタ基板の製造方法。 - 前記第1のシリコン酸化膜の成膜温度は230℃以下であり、
前記第2のシリコン酸化膜の成膜温度は230℃よりも大きい
請求項1に記載の薄膜トランジスタ基板の製造方法。 - 前記第1のシリコン酸化膜を成膜する工程では、
前記第1のシリコン酸化膜を成膜した結果、前記銅膜の一部が、前記キャップ膜に被覆されることなく、前記第1のシリコン酸化膜の少なくとも一部に接触する
請求項1又は2に記載の薄膜トランジスタ基板の製造方法。 - 前記キャップ膜は、CuMn合金膜である
請求項1〜3のいずれか1項に記載の薄膜トランジスタ基板の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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JP2014115264 | 2014-06-03 | ||
JP2014115264 | 2014-06-03 | ||
PCT/JP2015/002777 WO2015186349A1 (ja) | 2014-06-03 | 2015-06-02 | 薄膜トランジスタ基板の製造方法 |
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JPWO2015186349A1 JPWO2015186349A1 (ja) | 2017-04-20 |
JP6311900B2 true JP6311900B2 (ja) | 2018-04-18 |
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JP (1) | JP6311900B2 (ja) |
WO (1) | WO2015186349A1 (ja) |
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