JPWO2008111391A1 - 高周波パッケージ - Google Patents
高周波パッケージ Download PDFInfo
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- JPWO2008111391A1 JPWO2008111391A1 JP2009503955A JP2009503955A JPWO2008111391A1 JP WO2008111391 A1 JPWO2008111391 A1 JP WO2008111391A1 JP 2009503955 A JP2009503955 A JP 2009503955A JP 2009503955 A JP2009503955 A JP 2009503955A JP WO2008111391 A1 JPWO2008111391 A1 JP WO2008111391A1
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- multilayer dielectric
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- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000004020 conductor Substances 0.000 claims abstract description 39
- 239000002344 surface layer Substances 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims abstract description 11
- 230000005855 radiation Effects 0.000 abstract description 14
- 230000008878 coupling Effects 0.000 abstract description 4
- 238000010168 coupling process Methods 0.000 abstract description 4
- 238000005859 coupling reaction Methods 0.000 abstract description 4
- 230000001902 propagating effect Effects 0.000 abstract description 3
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 7
- 238000004088 simulation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
Description
2 高周波デバイス
3 シールリング
4 カバー
5 内部導体パッド
6 ワイヤ
7 導体パッド
10 送受信モジュール
11 導波管
12 導波管プレート
13 キャリア基板
14 モジュール制御基板
15 導波管
16 電子回路
17 外部端子
20 多層誘電体基板
21 外部導体パッド
22,23 信号ビア
23 内層信号線路
27 ワイヤ
28 グランドビア
40 凹部
50 先端開放線路
Claims (2)
- 高周波デバイスと、表層上に前記高周波デバイスが搭載される多層誘電体基板と、この多層誘電体基板の表層の一部および前記高周波デバイスを覆う電磁シールド部材とを備える高周波パッケージにおいて、
前記多層誘電体基板に、
電磁シールド部材の内側における多層誘電体基板の表層に配設され、前記高周波デバイスとワイヤ接続されるバイアス/制御信号用の内部導体パッドと、
前記内部導体パッドに接続され、前記電磁シールド部材の内側に配設される第1の信号ビアと、
前記電磁シールド部材の外側に配設されるバイアス/制御信号用の外部導体パッドと、
該外部導体パッドに接続され、前記電磁シールド部材の外側に配設される第2の信号ビアと、
第1の信号ビアと第2の信号ビアを接続する内層信号線路と、
を備えるとともに、
前記内部導体パッドに、前記高周波デバイスで使用する高周波信号の波長の略1/4の長さを有する先端開放線路を設けるようにしたことを特徴とする高周波パッケージ。 - 前記先端開放線路は、第1の信号ビアから前記高周波信号の波長の略1/4の長さを有することを特徴とする請求項1に記載の高周波パッケージ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009503955A JP4990353B2 (ja) | 2007-03-14 | 2008-02-26 | 高周波パッケージ |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007065475 | 2007-03-14 | ||
JP2007065475 | 2007-03-14 | ||
PCT/JP2008/053292 WO2008111391A1 (ja) | 2007-03-14 | 2008-02-26 | 高周波パッケージ |
JP2009503955A JP4990353B2 (ja) | 2007-03-14 | 2008-02-26 | 高周波パッケージ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008111391A1 true JPWO2008111391A1 (ja) | 2010-06-24 |
JP4990353B2 JP4990353B2 (ja) | 2012-08-01 |
Family
ID=39759333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009503955A Expired - Fee Related JP4990353B2 (ja) | 2007-03-14 | 2008-02-26 | 高周波パッケージ |
Country Status (5)
Country | Link |
---|---|
US (1) | US8130513B2 (ja) |
EP (1) | EP2124253B1 (ja) |
JP (1) | JP4990353B2 (ja) |
CN (1) | CN101578697B (ja) |
WO (1) | WO2008111391A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP4942776B2 (ja) * | 2009-01-23 | 2012-05-30 | 日立オートモティブシステムズ株式会社 | 電子デバイスパッケージ構造及びそれが用いられた電子回路モジュール |
JP5093137B2 (ja) * | 2009-02-02 | 2012-12-05 | 三菱電機株式会社 | 高周波モジュール |
US8110915B2 (en) * | 2009-10-16 | 2012-02-07 | Infineon Technologies Ag | Open cavity leadless surface mountable package for high power RF applications |
JP5512566B2 (ja) | 2011-01-31 | 2014-06-04 | 株式会社東芝 | 半導体装置 |
CN107134442B (zh) * | 2011-05-24 | 2020-04-28 | 三菱电机株式会社 | 高频封装 |
CN105590902B (zh) * | 2013-02-08 | 2019-02-19 | 日月光半导体制造股份有限公司 | 天线封装模块及其制造方法 |
JP5728102B1 (ja) * | 2014-02-13 | 2015-06-03 | 日本電信電話株式会社 | Mmic集積回路モジュール |
US9583811B2 (en) * | 2014-08-07 | 2017-02-28 | Infineon Technologies Ag | Transition between a plastic waveguide and a semiconductor chip, where the semiconductor chip is embedded and encapsulated within a mold compound |
CN106952886B (zh) * | 2017-03-25 | 2019-08-09 | 华进半导体封装先导技术研发中心有限公司 | 一种射频芯片封装结构 |
US11152707B1 (en) * | 2020-07-02 | 2021-10-19 | International Business Machines Corporation | Fast radio frequency package |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04186645A (ja) * | 1990-11-16 | 1992-07-03 | Sanyo Electric Co Ltd | マイクロ波集積回路の製造方法 |
JPH04363901A (ja) * | 1990-11-26 | 1992-12-16 | Mitsubishi Materials Corp | 高周波、マイクロ波用混成集積回路及びその製造方法 |
JPH06181266A (ja) * | 1992-12-11 | 1994-06-28 | Mitsubishi Electric Corp | 高周波帯ic用パッケージ |
JPH10224119A (ja) * | 1997-02-07 | 1998-08-21 | Nec Corp | 高周波回路およびその製造方法 |
JP2005101856A (ja) * | 2003-09-24 | 2005-04-14 | Mitsubishi Electric Corp | 高周波伝送基板および高周波伝送基板接続構造 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5045820A (en) * | 1989-09-27 | 1991-09-03 | Motorola, Inc. | Three-dimensional microwave circuit carrier and integral waveguide coupler |
JP3209183B2 (ja) | 1998-07-08 | 2001-09-17 | 日本電気株式会社 | 高周波信号用集積回路パッケージ及びその製造方法 |
JP2003086728A (ja) * | 2001-07-05 | 2003-03-20 | Matsushita Electric Ind Co Ltd | 高周波回路の製作方法及びそれを用いた装置 |
US6888235B2 (en) * | 2001-09-26 | 2005-05-03 | Molex Incorporated | Power delivery system for integrated circuits utilizing discrete capacitors |
JP3766791B2 (ja) * | 2001-10-12 | 2006-04-19 | シャープ株式会社 | 高周波フィルタ回路および高周波通信装置 |
CN1225082C (zh) * | 2001-11-26 | 2005-10-26 | 松下电器产业株式会社 | 高频功率放大装置和使用它的功率放大器模块 |
JP3778075B2 (ja) * | 2001-12-12 | 2006-05-24 | ソニー株式会社 | フィルタ回路 |
JP3649183B2 (ja) * | 2001-12-27 | 2005-05-18 | ソニー株式会社 | フィルタ回路装置及びその製造方法 |
US7102458B2 (en) * | 2002-05-23 | 2006-09-05 | Kyocera Corporation | High-frequency line-waveguide converter having the HF line terminated within an opening portion |
JP3738755B2 (ja) * | 2002-08-01 | 2006-01-25 | 日本電気株式会社 | チップ部品を備える電子装置 |
US7276987B2 (en) * | 2002-10-29 | 2007-10-02 | Kyocera Corporation | High frequency line-to-waveguide converter and high frequency package |
JP4186645B2 (ja) | 2003-02-24 | 2008-11-26 | 松下電器産業株式会社 | 超音波流量計測装置 |
JP4363901B2 (ja) | 2003-06-02 | 2009-11-11 | 株式会社フジタ | 電磁波吸収パネルの製作方法及び電磁波吸収パネル |
JP2005198051A (ja) * | 2004-01-08 | 2005-07-21 | Hitachi Ltd | 高周波モジュール |
EP1729340B1 (en) * | 2004-03-26 | 2017-09-06 | Mitsubishi Denki Kabushiki Kaisha | High frequency package, transmitting and receiving module and wireless equipment |
JP4056500B2 (ja) * | 2004-06-28 | 2008-03-05 | 三菱電機株式会社 | 伝送線路基板および半導体パッケージ |
EP1775765B1 (en) * | 2004-06-28 | 2018-05-02 | Mitsubishi Electric Corporation | Multilayer dielectric substrate and semiconductor package |
EP1793489A4 (en) * | 2004-09-21 | 2008-01-16 | Murata Manufacturing Co | HIGH FREQUENCY OSCILLATION CIRCUIT AND TRANSMITTER / RECEIVER |
WO2007091470A1 (ja) * | 2006-02-06 | 2007-08-16 | Mitsubishi Electric Corporation | 高周波モジュール |
CA2650496C (en) * | 2006-04-26 | 2016-06-28 | Ems Technologies, Inc. | Planar mixed-signal circuit board |
-
2008
- 2008-02-26 CN CN2008800017522A patent/CN101578697B/zh not_active Expired - Fee Related
- 2008-02-26 EP EP08720878.1A patent/EP2124253B1/en active Active
- 2008-02-26 WO PCT/JP2008/053292 patent/WO2008111391A1/ja active Application Filing
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04186645A (ja) * | 1990-11-16 | 1992-07-03 | Sanyo Electric Co Ltd | マイクロ波集積回路の製造方法 |
JPH04363901A (ja) * | 1990-11-26 | 1992-12-16 | Mitsubishi Materials Corp | 高周波、マイクロ波用混成集積回路及びその製造方法 |
JPH06181266A (ja) * | 1992-12-11 | 1994-06-28 | Mitsubishi Electric Corp | 高周波帯ic用パッケージ |
JPH10224119A (ja) * | 1997-02-07 | 1998-08-21 | Nec Corp | 高周波回路およびその製造方法 |
JP2005101856A (ja) * | 2003-09-24 | 2005-04-14 | Mitsubishi Electric Corp | 高周波伝送基板および高周波伝送基板接続構造 |
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US8130513B2 (en) | 2012-03-06 |
US20100046184A1 (en) | 2010-02-25 |
JP4990353B2 (ja) | 2012-08-01 |
EP2124253A4 (en) | 2010-08-04 |
CN101578697A (zh) | 2009-11-11 |
EP2124253B1 (en) | 2019-05-22 |
EP2124253A1 (en) | 2009-11-25 |
CN101578697B (zh) | 2011-12-28 |
WO2008111391A1 (ja) | 2008-09-18 |
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