JPS6421075A - Vapor growth method and device under reduced pressure - Google Patents

Vapor growth method and device under reduced pressure

Info

Publication number
JPS6421075A
JPS6421075A JP17852087A JP17852087A JPS6421075A JP S6421075 A JPS6421075 A JP S6421075A JP 17852087 A JP17852087 A JP 17852087A JP 17852087 A JP17852087 A JP 17852087A JP S6421075 A JPS6421075 A JP S6421075A
Authority
JP
Japan
Prior art keywords
combination
film formation
vapor growth
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17852087A
Other languages
Japanese (ja)
Other versions
JPH0645876B2 (en
Inventor
Isamu Morisako
Hideo Mito
Kenji Numajiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP62178520A priority Critical patent/JPH0645876B2/en
Publication of JPS6421075A publication Critical patent/JPS6421075A/en
Publication of JPH0645876B2 publication Critical patent/JPH0645876B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To minimize the inevitable damage of Si when selective vapor growth of a W film is carried out on an Si substrate, by selecting a combination so that film formation proceeds at a low rate, carrying out vapor growth and changing over the combination to other combination so that film formation proceeds at a high rate. CONSTITUTION:Gaseous WF6 and gaseous H2 are introduced into a device under reduced pressure, a combination of the temp. of an Si substrate with the flow rates of the reactive gases and the pressure is selected so that W film formation proceeds at a low rate, and a W film is formed on the Si substrate. The combination is then changed over to other combination so that W film formation proceeds at a high rate, and a thin W film is selectively formed on the Si substrate. The other combination is determined by a curve drawn with the amt. of SiF4 produced by a vapor growth reaction as an x-axis and film formation time as a y-axis.
JP62178520A 1987-07-17 1987-07-17 Reduced pressure vapor deposition method and apparatus Expired - Lifetime JPH0645876B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62178520A JPH0645876B2 (en) 1987-07-17 1987-07-17 Reduced pressure vapor deposition method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62178520A JPH0645876B2 (en) 1987-07-17 1987-07-17 Reduced pressure vapor deposition method and apparatus

Publications (2)

Publication Number Publication Date
JPS6421075A true JPS6421075A (en) 1989-01-24
JPH0645876B2 JPH0645876B2 (en) 1994-06-15

Family

ID=16049912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62178520A Expired - Lifetime JPH0645876B2 (en) 1987-07-17 1987-07-17 Reduced pressure vapor deposition method and apparatus

Country Status (1)

Country Link
JP (1) JPH0645876B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6468474A (en) * 1987-09-10 1989-03-14 Tokyo Electron Ltd Formation of film
JPH01276624A (en) * 1988-04-28 1989-11-07 Agency Of Ind Science & Technol Manufacture of semiconductor device
JPH02237116A (en) * 1989-03-10 1990-09-19 Mitsubishi Electric Corp Formation of thin film for semiconductor device
US8020669B2 (en) 2000-12-08 2011-09-20 Kone Corporation Elevator and traction sheave of an elevator

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63153273A (en) * 1986-12-16 1988-06-25 Matsushita Electric Ind Co Ltd Method for selective deposition of thin metallic film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63153273A (en) * 1986-12-16 1988-06-25 Matsushita Electric Ind Co Ltd Method for selective deposition of thin metallic film

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6468474A (en) * 1987-09-10 1989-03-14 Tokyo Electron Ltd Formation of film
JPH01276624A (en) * 1988-04-28 1989-11-07 Agency Of Ind Science & Technol Manufacture of semiconductor device
JPH02237116A (en) * 1989-03-10 1990-09-19 Mitsubishi Electric Corp Formation of thin film for semiconductor device
US8020669B2 (en) 2000-12-08 2011-09-20 Kone Corporation Elevator and traction sheave of an elevator
US8069955B2 (en) 2000-12-08 2011-12-06 Kone Corporation Elevator and traction sheave of an elevator

Also Published As

Publication number Publication date
JPH0645876B2 (en) 1994-06-15

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