JPS5623736A - Vapor phase growing method - Google Patents

Vapor phase growing method

Info

Publication number
JPS5623736A
JPS5623736A JP9820079A JP9820079A JPS5623736A JP S5623736 A JPS5623736 A JP S5623736A JP 9820079 A JP9820079 A JP 9820079A JP 9820079 A JP9820079 A JP 9820079A JP S5623736 A JPS5623736 A JP S5623736A
Authority
JP
Japan
Prior art keywords
film
vapor phase
carbon susceptor
approx
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9820079A
Other languages
Japanese (ja)
Other versions
JPS6136699B2 (en
Inventor
Mamoru Maeda
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9820079A priority Critical patent/JPS5623736A/en
Publication of JPS5623736A publication Critical patent/JPS5623736A/en
Publication of JPS6136699B2 publication Critical patent/JPS6136699B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a vapor phase grown film having no pollution nor defect with high quality by eliminating H2 adsorbed or absorbed to a carbon susceptor. CONSTITUTION:After growing the film, the temperature of a high temperature carbon susceptor is lowered to approx. 600 deg.C, H2 or the like is stopped feeding thereto, the pressure in a high pressure reaction chamber is reduced to approx. 10<-1> Torr, and N2 is fed thereto so as to return gradually it to 1atm. This configuration can prevent N2 from reacting at high temperature, can discharge H2 as much as possible in vacuum state, and N2 is instead adsorbed or absorbed thereto. Accordingly, when the carbon susceptor is thereafter exhausted into the air, almost no production of H2O due to combination of O2 in the air. Accordingly, it is not apprehenced to be polluted by H2O when growing the film at next time and to produce crystal defect.
JP9820079A 1979-07-31 1979-07-31 Vapor phase growing method Granted JPS5623736A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9820079A JPS5623736A (en) 1979-07-31 1979-07-31 Vapor phase growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9820079A JPS5623736A (en) 1979-07-31 1979-07-31 Vapor phase growing method

Publications (2)

Publication Number Publication Date
JPS5623736A true JPS5623736A (en) 1981-03-06
JPS6136699B2 JPS6136699B2 (en) 1986-08-20

Family

ID=14213355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9820079A Granted JPS5623736A (en) 1979-07-31 1979-07-31 Vapor phase growing method

Country Status (1)

Country Link
JP (1) JPS5623736A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60127843U (en) * 1984-02-08 1985-08-28 日本軽金属株式会社 Feeding mechanism of stopper for processing machine
JPS6247116A (en) * 1985-08-26 1987-02-28 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing equipment
JPS6251210A (en) * 1985-08-30 1987-03-05 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6252924A (en) * 1985-09-01 1987-03-07 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6254422A (en) * 1985-08-08 1987-03-10 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6269608A (en) * 1985-09-24 1987-03-30 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6136699A (en) * 1984-07-27 1986-02-21 板井　敬吉 Model gun

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6136699A (en) * 1984-07-27 1986-02-21 板井　敬吉 Model gun

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60127843U (en) * 1984-02-08 1985-08-28 日本軽金属株式会社 Feeding mechanism of stopper for processing machine
JPS6254422A (en) * 1985-08-08 1987-03-10 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6247116A (en) * 1985-08-26 1987-02-28 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing equipment
JPS6251210A (en) * 1985-08-30 1987-03-05 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6252924A (en) * 1985-09-01 1987-03-07 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6269608A (en) * 1985-09-24 1987-03-30 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6136699B2 (en) 1986-08-20

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