JPS54126695A - Forming method for vapor phase grown film - Google Patents

Forming method for vapor phase grown film

Info

Publication number
JPS54126695A
JPS54126695A JP3430478A JP3430478A JPS54126695A JP S54126695 A JPS54126695 A JP S54126695A JP 3430478 A JP3430478 A JP 3430478A JP 3430478 A JP3430478 A JP 3430478A JP S54126695 A JPS54126695 A JP S54126695A
Authority
JP
Japan
Prior art keywords
vapor phase
ascl
impurity
phase grown
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3430478A
Other languages
Japanese (ja)
Inventor
Soichiro Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3430478A priority Critical patent/JPS54126695A/en
Publication of JPS54126695A publication Critical patent/JPS54126695A/en
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain an impurity-added uniform vapor phase grown film by introducing hydride and chloride of the impurity into a reaction tube at the same time and forming a Si-based or Si-contg. vapor phase grown film.
CONSTITUTION: In case a high concn. As-added vapor phase grown film is simultaneously formed in vapor phase growth of SiO2 using SiH4 and O2, AsH3 and AsCl3 are used as impurity sources. AsH3 is fed in the form of gas, yet since AsCl3 is liquid at ordinary temp., an inert gas such as Ar or N2 is passed through liquid AsCl3 and AsCl3 vapor contained in the gas is utilized. Accordingly, the addn. of the sources increases SiO2 vapor phase growing speed. By controlling the amt. of the sources added, conditions about equal to those with no impurity can be attained and an As-added uniform vapor phase grown SiO2 film is obtd. almost all over the tube inside.
COPYRIGHT: (C)1979,JPO&Japio
JP3430478A 1978-03-24 1978-03-24 Forming method for vapor phase grown film Pending JPS54126695A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3430478A JPS54126695A (en) 1978-03-24 1978-03-24 Forming method for vapor phase grown film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3430478A JPS54126695A (en) 1978-03-24 1978-03-24 Forming method for vapor phase grown film

Publications (1)

Publication Number Publication Date
JPS54126695A true JPS54126695A (en) 1979-10-02

Family

ID=12410409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3430478A Pending JPS54126695A (en) 1978-03-24 1978-03-24 Forming method for vapor phase grown film

Country Status (1)

Country Link
JP (1) JPS54126695A (en)

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