JPS62193204A - Voltage nonlinear device - Google Patents
Voltage nonlinear deviceInfo
- Publication number
- JPS62193204A JPS62193204A JP61035970A JP3597086A JPS62193204A JP S62193204 A JPS62193204 A JP S62193204A JP 61035970 A JP61035970 A JP 61035970A JP 3597086 A JP3597086 A JP 3597086A JP S62193204 A JPS62193204 A JP S62193204A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- zno
- powder
- low
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000843 powder Substances 0.000 claims description 31
- 239000011521 glass Substances 0.000 claims description 17
- 238000002844 melting Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 69
- 239000011787 zinc oxide Substances 0.000 description 34
- 239000000463 material Substances 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000008018 melting Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229910000416 bismuth oxide Inorganic materials 0.000 description 4
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000417 bismuth pentoxide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 102220041874 rs587780791 Human genes 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は印加電圧によって抵抗値が変化する電圧非直線
性素子に関するもので、電圧安定化、異常電圧制御、さ
らにはマトリックス駆動の液晶、ＫＬなどの表示デバイ
スのスイッチング素子などに利用されるものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a voltage nonlinear element whose resistance value changes depending on an applied voltage, and is useful for voltage stabilization, abnormal voltage control, and matrix-driven liquid crystal, KL, etc. It is used in switching elements of display devices, etc.
従来の技術
従来の電圧非直線性素子は、酸化亜鉛（ＺｎＯ）に酸化
ビスマスＣＢ４．２０ｓ）、酸化コバルト（Ｃｏ２０ｓ
）酸化？ ７ ｉ ：ｙ （ＭｎＯ２）、酸化アンチモ
ン（Ｓｂ ２０ ｓ ）などの酸化物を添加して、１０
００〜１３５０°Ｃで焼結したＺｎＯバリスタなど、種
々のものがある。Conventional technology Conventional voltage non-linear elements are made of zinc oxide (ZnO), bismuth oxide (CB4.20s), cobalt oxide (Co20s).
) Oxidation? By adding oxides such as 7i:y (MnO2) and antimony oxide (Sb20s), 10
There are various types such as ZnO varistors sintered at 00 to 1350°C.
その中で、ＺｎＯバリスタは電圧非直線指数α、サージ
耐量が大きいことから、最も一般的に使われている。（
特公昭４６−１９４７２号公報参照）発明が解決しよう
とする問題点
このような従来の電圧非直線性素子は、ＺｎＯバリスタ
を初めとして、素子厚みを薄く（数十μｍ以下）するこ
とに限界があるため、バリスタ電圧（バリスタに電流１
ｍＡを流した時の電圧Ｖ、Ｔ１１Ａで表される）を低く
することに限界があシ、低電圧用ＩＣの保護素子や低い
電圧における電圧安定化素子として使えないものであっ
た。また、上述したように１０００°Ｃ以上の高温プロ
セスを必要とするため、ガラス基板上あるいは回路基板
上に電圧非直線性素子を直接形成できないという問題が
あった。さらに、従来のものは並列静電容量が大きく、
例えば液晶などのスイッチング素子としては不適自なも
のであるなどの問題点を有していた。Among them, ZnO varistors are most commonly used because of their large voltage nonlinearity index α and surge resistance. (
(Refer to Japanese Patent Publication No. 46-19472) Problems to be Solved by the Invention In such conventional voltage nonlinear elements, including ZnO varistors, there is a limit to how thin the element can be (less than several tens of μm). Therefore, the varistor voltage (current 1 to the varistor
There is a limit to lowering the voltage V (expressed as T11A) when mA flows, and it cannot be used as a protection element for low voltage ICs or a voltage stabilizing element at low voltages. Further, as described above, since a high temperature process of 1000° C. or higher is required, there is a problem that a voltage nonlinear element cannot be directly formed on a glass substrate or a circuit board. Furthermore, the conventional type has a large parallel capacitance,
For example, they have had problems such as being unsuitable for switching elements such as liquid crystals.
問題点を解決するための手段
この問題点を解決するために本発明は、Ｂｉ ２０５を
主成分とする薄い絶縁被膜を有した微粉末状の半導体物
質が複数個集まった状態を一つの粉末とし、その粉末間
もしくは一部に上記微粉末を含む粉末間を低融点ガラス
で固め、電極を備えてなるものである。Means for Solving the Problem In order to solve this problem, the present invention combines a plurality of finely powdered semiconductor materials having a thin insulating film mainly composed of Bi 205 into one powder. A low melting point glass is solidified between the powders or between the powders containing the above-mentioned fine powder in part, and an electrode is provided.
作用
この構成によれば、低電流域においても電圧非直線指数
αの大きなものが得られ、かつ電極間距離を狭く（数十
μｍ以下）して素子を形成することができ、低電圧化に
適した素子がきわめて容易に得られることとなる。また
、低融点ガラスで固めて素子形成を行うために高温プロ
セスを必要とすることなく作ることができるため、回路
基板上に素子を直接形成することができ、ＺｎＯバリス
タなどでは考えられない幅広い用途が期待できるもので
ある。さらに、粉末状の半導体物質を低融点ガラスで固
めたものであるため、それぞれの半導体物質の粉末間は
点接触となシ、接触面積が小さいことから並列静電容量
の小さなものが得られ、液晶などのデバイスのスイッチ
ング素子として最適な素子が提供できることとなる。Effect: According to this configuration, a large voltage non-linearity index α can be obtained even in a low current range, and an element can be formed with a narrow distance between electrodes (several tens of μm or less), making it possible to reduce voltage. A suitable element can be obtained very easily. In addition, since it can be made without requiring high-temperature processes to form elements by solidifying them with low-melting point glass, it is possible to form elements directly on circuit boards, allowing for a wide range of applications unimaginable with ZnO varistors, etc. can be expected. Furthermore, since the powdered semiconductor material is solidified with low-melting glass, there is no point contact between the powders of each semiconductor material, and the contact area is small, resulting in a small parallel capacitance. This makes it possible to provide an element that is optimal as a switching element for devices such as liquid crystals.
実施し１ｊ 以下、本発明を実施列にもとづいて詳細に説明する。Implemented 1j Hereinafter, the present invention will be explained in detail based on examples of implementation.
まず、粒子径がＯ，ＯＳ〜１μｍの微粒子状の酸化亜鉛
を７００〜１３ｏＯ°Ｃで焼成した後、その焼結された
ＺｎＯを０．５〜６０μｍの粒子径（平均粒子径１〜１
０μｍ ）に粉砕し、そのＺｎＯ微粉末に酸化ビスマス
ｉｏ、０５〜１０ｍｏ１％添加し、６００〜１３６０℃
で１０〜６０分間、熱処理し、そのＺｎＯ微粉末表面に
酸化ビスマスの絶縁被膜を形成した。ここで、微粉末状
のＺｎＯの表面にはＢｉ２Ｏ３絶縁被膜がほぼ数十〜数
百人の厚さで薄く形成されていることが認められた。次
いで、このようにして作成したＢｉ ２０３絶縁被膜が
表面についたＺｎＯ微粉末群は弱い力で互いに接着して
いるので、これを乳鉢あるいはボットミルでほぐし、上
記ＺｎＯ微粉末がそれぞれ複数個集まった微粉末群の状
態とした（以下、この状態のものを粉末状という）。こ
の時、一部に上記ＺｎＯ微粉末が単独で存在しても差支
えないものであシ、このよりなＺｎＯ微粉末を一部に含
んでの状態のものも粉末状という。First, fine particulate zinc oxide with a particle size of O,OS~1μm is fired at 700~13oO°C, and then the sintered ZnO is heated with a particle size of 0.5~60μm (average particle size 1~1μm).
0 μm), added 05 to 10 mo1% of bismuth oxide to the ZnO fine powder, and heated at 600 to 1360°C.
A heat treatment was performed for 10 to 60 minutes to form an insulating film of bismuth oxide on the surface of the ZnO fine powder. Here, it was observed that a Bi2O3 insulating film was formed thinly on the surface of the finely powdered ZnO to a thickness of approximately several tens to several hundreds of layers. Next, since the ZnO fine powders with the Bi 203 insulating film attached to the surfaces created in this way adhere to each other with weak force, they are loosened in a mortar or a bot mill to form a fine mixture of a plurality of each of the above ZnO fine powders. It was made into a powder state (hereinafter, this state is referred to as a powder state). At this time, there is no problem even if the above-mentioned ZnO fine powder is present alone in a part, and a state in which a part of the ZnO fine powder is included is also referred to as a powder.
次に、上記のようにして得られたＢｉ ２０ ｓ絶縁被
膜が表面に形成された粉末状のＺｎＯに、粉末間の結合
を図る絶縁性の結合剤として低融点ガラス粉末と有機バ
インダーを添加し、混合した。ここで、結合剤としては
低融点ガラス粉末分が粉末状のＺｎＯに対して５〜２０
ｗｔ％となるようにしたものとし、それを有機バインダ
ーと例えば等重量で混合し、ペイント状とした。ここで
、有機バインダーとしてはエチルセルロースを使用し、
その固形分が溶剤（たとえばターピネオール）に対して
１０ｗｔ％になるように薄め念ものとした。Next, low melting point glass powder and an organic binder were added as an insulating binder to bond the powders to the powdered ZnO with the Bi 20 s insulating film formed on the surface obtained as described above. , mixed. Here, as a binder, the low melting point glass powder content is 5 to 20% relative to powdered ZnO.
wt%, and mixed it with an organic binder in an equal weight, for example, to form a paint. Here, ethyl cellulose is used as the organic binder,
The solid content was diluted to 10 wt % based on the solvent (for example, terpineol).
次いで、上記のようにして得られたベイン）ｔ−第２図
に示すようにＩＴＯ（インジウム・スズ酸化物）電極１
の設けられたガラス基板３上に例えばスクリーン印刷で
塗布し、その上に同じ（ＩＴＯ電極２の設けられたガラ
ス基板４を載置し、３００〜６５０℃で１０〜３０分間
、大気中で熱処理し、電極１．２間に電圧非直線性素子
６を設けた。第１図は、電圧非直線性素子５の拡大断面
図であ）、６はＺｎＯ粉末、７はＺｎＯ粉末６の表面に
施されたＢｉ２Ｏ５絶縁被膜、８はそれらＺｎＯ粉末６
間を機械的に結合している絶縁性結合剤の低融点ガラス
であシ、この低融点ガラス８でもってＺｎＯ粉末６の間
は互いに固められている。第３図はＩＴＯ電極１ａ、１
ｂが設けられたガラス基板３亀上に電圧非直線性素子６
を構成した場合を示している。Next, as shown in FIG. 2, the ITO (indium tin oxide) electrode 1
For example, it is coated on a glass substrate 3 provided with ITO electrodes 2 by screen printing, and a glass substrate 4 provided with the same ITO electrodes 2 is placed on top of it, and heat treated in the air at 300 to 650° C. for 10 to 30 minutes. A voltage nonlinear element 6 was provided between the electrodes 1 and 2. Fig. 1 is an enlarged sectional view of the voltage nonlinear element 5), 6 is a ZnO powder, and 7 is a surface of the ZnO powder 6. The applied Bi2O5 insulation coating, 8 is the ZnO powder 6
A low melting point glass 8 is used as an insulating binder to mechanically bond the ZnO powders 6 to each other. Figure 3 shows ITO electrodes 1a, 1
Voltage nonlinear element 6 is placed on the glass substrate 3 provided with b.
This shows the case where .
次に、上記のようにして作成された電圧非直線性素子の
電圧−電流特性について説明する。まず、第４図は第２
図の構成における電圧−電流特性を従来のＺｎＯバリス
タのそれと比較して示している。本発明の素子は、まず
酸化亜鉛を７００°Ｃで焼成し、これにＢｉ２Ｏ５を０
．５ ｍｏｐ％添加したものを９００°Ｃ１６ｏ分間熱
処理した後、この平均粒子径５〜１０μｍのＺｎＯ粉末
と奥野製薬■製の低融点ガラス微粉末（ＺｎＯ粉末に対
して２゜ｗｔ％）に上記有機バインダーを等重量で混合
したものにおいて、素子面積を１Ｍ！ｔ１電極間距離を
３０μｍとした場合における特性を示している。Next, the voltage-current characteristics of the voltage nonlinear element created as described above will be explained. First, Figure 4 shows the second
The voltage-current characteristics of the configuration shown in the figure are compared with those of a conventional ZnO varistor. The device of the present invention is made by first firing zinc oxide at 700°C, and then adding Bi2O5 to it.
．． After heat-treating the ZnO powder with an average particle size of 5 to 10 μm and the low melting point glass fine powder manufactured by Okuno Pharmaceutical Co., Ltd. (2 wt% based on the ZnO powder), the above-mentioned organic When the binder is mixed in equal weight, the device area is 1M! The characteristics are shown when the distance between the t1 electrodes is 30 μm.
さて、電圧非直線性素子の電圧−電流特性は、よく知ら
れているように近似的に次式で示されている。Now, as is well known, the voltage-current characteristics of a voltage nonlinear element are approximately expressed by the following equation.
Ｉ＝ＫＶα
ここで、工は素子に流れる電流、Ｖは素子の電極間の電
圧、Ｋは固有抵抗の抵抗値に相当する定数、αは上述し
た電圧非直線特性の指数を示しておシ、この電圧非直線
指数αは大きい程、電圧非直線性が優れていることにな
る。I=KVα Here, K is the current flowing through the element, V is the voltage between the electrodes of the element, K is a constant corresponding to the resistance value of the specific resistance, and α is the exponent of the voltage nonlinear characteristic mentioned above. The larger the voltage nonlinearity index α, the better the voltage nonlinearity.
第４図の特性に示されるように、特性Ｂで示される従来
のＺｎＯバリスタは低電流域において電圧非直線指数α
が小さく、１ｏ−４ム以下の電流では良好な電圧非直線
性素子としての機能を発揮し得ない。一方、特性ムで示
される本発明の素子では低電流域においても電圧非直線
指数αが大きく、１０ Ａ程度の電流域でも十分に
電圧非直線性素子としての機能を発揮することができる
ことを示しているｎまた、通常、ＺｎＯバリスタにおい
てはバリスタ特性を表わすのに、例えば素子に１ｍＡの
電流を流した時の電極間に現れる電圧を７＜ ＩＪスタ
電電圧７１五ム呼び、このバリスタ電圧ｖ１！＋ｌムと
上記電圧非直線指数αとを使用している。As shown in the characteristics in Figure 4, the conventional ZnO varistor shown by characteristic B has a voltage nonlinearity index α in the low current region.
is small, and cannot function as a good voltage nonlinear element at a current of 10-4 μm or less. On the other hand, the voltage nonlinearity index α of the device of the present invention shown by the characteristic curve is large even in the low current range, indicating that it can sufficiently function as a voltage nonlinearity device even in the current range of about 10 A. In addition, in order to express the varistor characteristics of a ZnO varistor, for example, the voltage that appears between the electrodes when a current of 1 mA is passed through the element is called 7 < IJ star voltage 715 m, and this varistor voltage v1 ! +lm and the above-mentioned voltage non-linearity index α are used.
本発明の素子では、上述したように、低電流域において
も電圧非直線指数αが大きく、バリスタ電圧を第４図に
示すように例えばｖｉｌｔムで表わすことができる。As described above, in the device of the present invention, the voltage non-linearity index α is large even in the low current range, and the varistor voltage can be expressed by, for example, viltm as shown in FIG.
このように本発明において、バリスタ電圧を低いものと
することができるのは、電極間距離を狭くして素子を形
成することができるためである。In this way, in the present invention, the varistor voltage can be made low because the element can be formed by narrowing the distance between the electrodes.
また、本発明素子において低電流域でも電圧非直線指数
αが大きい理由は、現在のところ理由は明確とはなって
いないが、粉末状の半導体物質（ＺｎＯ）を絶縁性結合
剤の低融点ガラスでもフて固めたものであるため、それ
ぞれの半導体物質の間は点接触となり、接触面積が小さ
いこと、また結合剤が絶縁性のため、漏れ電流が小さく
なっていることによるものと考えられる。Furthermore, although the reason why the voltage nonlinearity index α is large even in the low current range in the device of the present invention is not clear at present, However, since it is a solidified material, there is point contact between each semiconductor material, and the contact area is small, and the bonding agent is insulating, so leakage current is thought to be small.
ここで、第４図の特性は上述したように電極間距離を３
０μｍとした素子についてのものであるが、これはＺｎ
Ｏ粉末の平均粒子径が６〜１０μｍという比較的大きな
粒子径のためにこれ以上狭くすることができないからで
ある。すなわち、ＺｎＯ粉末の平均粒子径が０．３〜３
μｍのものを使えば、電極間距離が１０μｍ程度もしく
はそれ以下の素子を作成することができるのであり、そ
の場合においても第４図に示すような良好な特性が得ら
れることを本発明者らは実験により確認した。Here, the characteristics shown in Fig. 4 are as follows when the distance between the electrodes is 3
This is for an element with a thickness of 0 μm;
This is because the average particle diameter of O powder is relatively large, 6 to 10 μm, and cannot be made any narrower. That is, the average particle diameter of the ZnO powder is 0.3 to 3
The inventors have shown that if a micrometer electrode is used, it is possible to create an element with an interelectrode distance of about 10 μm or less, and even in that case, good characteristics as shown in FIG. 4 can be obtained. was confirmed by experiment.
第６図は本発明において、酸化ビスマスの添加量を変え
た場合のバリスタ電圧ｖ１μム、電圧非直線指数αおよ
び並列静電容量Ｃの変化する様子を示している。ここで
、酸化亜鉛の焼成温度など、その他の条件は第４図の場
合の条件と同一とした。FIG. 6 shows how the varistor voltage v1 μm, the voltage nonlinearity index α, and the parallel capacitance C change when the amount of bismuth oxide added is changed in the present invention. Here, other conditions such as the firing temperature of zinc oxide were the same as those in the case of FIG. 4.
第６図に示されるように、本発明素子においては並列静
電容量が従来のＺｎＯバリスタが１０００〜２００００
ＰＦであるのに対して非常に小さいものとなっている。As shown in FIG. 6, in the device of the present invention, the parallel capacitance is 1000 to 20000 compared to that of the conventional ZnO varistor.
Although it is a PF, it is very small.
この並列静電容量が本発明素子において小さい理由は、
上述したように半導体物質間の接触面積が小さいことに
よるものである。The reason why this parallel capacitance is small in the device of the present invention is as follows.
This is due to the small contact area between semiconductor materials as described above.
なお、上記の実施例においては、半導体物質としては、
ＺｎＯを例にとシ説明したが、それ以外゛の半導体物質
であっても差支えないことはもちろんである。また、同
様に絶縁被膜を構成する材料としては、Ｂｉ２Ｏ３単独
に限られることはなく、Ｂ１２Ｊを主成分として、ムＪ
、Ｔｉ、Ｓｒ、Ｍｇ、Ｎｉ。In addition, in the above embodiment, the semiconductor material is
Although the explanation has been given using ZnO as an example, it goes without saying that other semiconductor materials may be used. Similarly, the material constituting the insulating film is not limited to Bi2O3 alone, but may include B12J as the main component, MuJ
, Ti, Sr, Mg, Ni.
Ｏｒ、Ｓｉなどの金属酸化物またはこれらの金属の有機
金属化合物を単独または組合せて使用することができる
ものである。Metal oxides such as Or and Si or organometallic compounds of these metals can be used alone or in combination.
発明の効果
以上の説明より明らかなように本発明の電圧非直線性素
子は、低電流域における電圧非直線指数αが大きく、ま
た並列静電容量の小さな素子が得られることから、消費
電流の小さい液晶、ＫＬなどのデバイスのスイッチング
素子として最適な素子を提供できるものである。また電
極間距離を狭くして素子を形成することができるため、
バリス夕電圧の低いものが得られ、上記電圧非直線指数
αが大きいことと相まって従来のＺｎＯバリスタでは対
応することのできなかった低電圧用ＩＣの保護素子や低
い電圧における電圧安定化素子として使用することがで
きる。さらに、低融点ガラスで固めて素子形成を行うた
めに高温プロセスを必要とすることなく簡単にして作る
ことができるため、回路基板上やガラス基板上に素子を
直接形成することができるものである。このように種々
の特徴を有する本発明の電圧非直線性素子は、今までの
ＺｎＯバリスタなどでは考えられない幅広い用途が期待
できるものであり、その産業性は大なるものである。Effects of the Invention As is clear from the above explanation, the voltage nonlinear element of the present invention has a large voltage nonlinearity index α in the low current range, and an element with small parallel capacitance can be obtained, so that current consumption can be reduced. This makes it possible to provide an element that is optimal as a switching element for devices such as small liquid crystals and KLs. In addition, since it is possible to form an element with a narrower distance between electrodes,
A low varistor voltage can be obtained, and in combination with the large voltage nonlinearity index α mentioned above, it can be used as a protection element for low voltage ICs and as a voltage stabilizing element at low voltages, which conventional ZnO varistors could not handle. can do. Furthermore, since it can be easily manufactured without requiring high-temperature processes to form elements by solidifying them with low-melting glass, it is possible to form elements directly on circuit boards or glass substrates. . The voltage nonlinear element of the present invention having such various characteristics can be expected to have a wide range of applications unimaginable for conventional ZnO varistors, and has great industrial potential.
第１図は本発明に係わる電圧非直線性素子の一実施例を
示す拡大断面図、第２図および第３図はそれぞれ本発明
の素子をガラス基板上に設けた実施例を示す断面図、第
４図は本発明素子と従来のＺｎＯバリスタの電圧−電流
特性を示す図、第５図は本発明素子においてＢｉ２Ｏ５
の添加量を変えた場合の電圧非直線指数α、バリスタ電
圧Ｖ、ｌｉＡおよび並列静電容量Ｃの変化する様子を示
す図である。
１ 、１ ＆ 、 １ ｂ 、 ２・−・・ＩＴＯ電極
、３ 、３ ＆。
４・・・・・・ガラス基板、５・・・・・・電圧非直線
性素子、６・・・・・・ＺｎＯ粉末、了・・・・・・Ｂ
ｉ２Ｏ５絶縁破膜、８・・・・・低融点ガラス。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名ａ）
綜
第４図
一力 電圧（１’）
第 ５ 図FIG. 1 is an enlarged sectional view showing an embodiment of a voltage nonlinear element according to the present invention, and FIGS. 2 and 3 are sectional views showing an embodiment in which the element of the present invention is provided on a glass substrate, respectively. FIG. 4 is a diagram showing the voltage-current characteristics of the device of the present invention and a conventional ZnO varistor, and FIG. 5 is a diagram showing the voltage-current characteristics of the device of the present invention and a conventional ZnO
FIG. 3 is a diagram showing how the voltage non-linearity index α, varistor voltage V, liA, and parallel capacitance C change when the amount of addition is changed. 1, 1 &, 1 b, 2...ITO electrode, 3, 3 &. 4...Glass substrate, 5...Voltage nonlinear element, 6...ZnO powder, End...B
i2O5 insulation rupture, 8...Low melting point glass. Name of agent: Patent attorney Toshio Nakao and 1 other persona) Figure 4 Ichiriki Voltage (1') Figure 5
Claims (1)
微粉末状の半導体物質が複数個集まった状態を一つの粉
末とし、その粉末間もしくは一部に上記微粉末を含む粉
末間を低融点ガラスで固め、電極を備えてなることを特
徴とする電圧非直線性素子。A state in which a plurality of finely powdered semiconductor substances with a thin insulating film mainly composed of Bi_2O_3 are assembled into one powder, and the spaces between the powders or between the powders containing the above-mentioned fine powder in part are solidified with low-melting glass. , a voltage nonlinear element comprising an electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61035970A JPS62193204A (en) | 1986-02-20 | 1986-02-20 | Voltage nonlinear device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61035970A JPS62193204A (en) | 1986-02-20 | 1986-02-20 | Voltage nonlinear device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62193204A true JPS62193204A (en) | 1987-08-25 |
Family
ID=12456781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61035970A Pending JPS62193204A (en) | 1986-02-20 | 1986-02-20 | Voltage nonlinear device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62193204A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5344899A (en) * | 1976-09-13 | 1978-04-22 | Gen Electric | Metal oxide varistor and method of manufacture thereof |
-
1986
- 1986-02-20 JP JP61035970A patent/JPS62193204A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5344899A (en) * | 1976-09-13 | 1978-04-22 | Gen Electric | Metal oxide varistor and method of manufacture thereof |
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