JPS62193203A - Voltage nonlinear device - Google Patents
Voltage nonlinear deviceInfo
- Publication number
- JPS62193203A JPS62193203A JP61035969A JP3596986A JPS62193203A JP S62193203 A JPS62193203 A JP S62193203A JP 61035969 A JP61035969 A JP 61035969A JP 3596986 A JP3596986 A JP 3596986A JP S62193203 A JPS62193203 A JP S62193203A
- Authority
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- Prior art keywords
- voltage
- zno
- powder
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- present
- Prior art date
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- 239000000843 powder Substances 0.000 claims description 32
- 239000011521 glass Substances 0.000 claims description 18
- 238000002844 melting Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 61
- 239000011787 zinc oxide Substances 0.000 description 30
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 17
- 239000000463 material Substances 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 238000004393 prognosis Methods 0.000 description 1
- 102220309539 rs1553218779 Human genes 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は印加電圧によって抵抗値が変化する電圧非直線
性素子に関するもので、電圧安定化、異常電圧制御、さ
らにはマトリ・Ｉクス駆動の液晶。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a voltage non-linear element whose resistance value changes depending on an applied voltage, and is used for voltage stabilization, abnormal voltage control, and matrix-Ix driving liquid crystal.
ＥＬなどの表示デバイスのスイッチング素子などに利用
されるものである。It is used in switching elements of display devices such as EL.
従来の技術
従来の電圧非直線性素子は、酸化亜鉛（ＺｎＯ）に酸化
ビスマス（ＢｉｚＯｓ、、）、 酸化コバルトＣＧａ２
Ｏ３＞ 、酸ｆヒマンガン（Ｍｎ０２）、酸化アンチモ
ン（３１）２０５）などの酸化物を添加して、１０００
〜１３５０’Ｃで焼結したＺｎＯバリスタなど１種々の
ものがある。その中で、ＺｎＯバリスタは電圧非直線指
数α、サージ耐量が大きいことから、最も一般的に使わ
れている。（特公昭４６−１９４７２号公報参照）
発明が解決しようとする問題点
このような従来の電圧非直線性素子は、ＺｎＯバリスタ
を初めとして、素子厚み全薄く（数十μｍ以下）するこ
とに限界があるため、バリスタ電圧（バリスタに電流１
ｍＡを流した時の電圧ｖ１１ＴＩＡで表わされる）′！
！−低くすることに限界があり、低電圧用ＩＣの保護素
子や低い電圧における電圧安定化素子として使えないも
のであった。また、上述したように１０００℃以上の高
温プロセスを必要とするため、ガラ、ス基板上あるいは
回路基板上に電圧非直線性素子に直接形成できないとい
う問題があった。さらに、従来のものは並列静電容量が
大きく１例えば液晶などのスイッチング素子としては不
適当なものであるなどの問題点を有していた。Conventional technology Conventional voltage nonlinear elements are made of zinc oxide (ZnO), bismuth oxide (BizOs, ), cobalt oxide CGa2
1000 by adding oxides such as acid f manganese (Mn02) and antimony oxide (31)205
There are various types such as ZnO varistors sintered at ~1350'C. Among them, ZnO varistors are most commonly used because of their large voltage nonlinearity index α and surge resistance. (Refer to Japanese Patent Publication No. 46-19472) Problems to be Solved by the Invention Conventional voltage non-linear elements such as these, including ZnO varistors, have limitations in making the element thickness completely thin (several tens of μm or less). Therefore, the varistor voltage (current 1 in the varistor)
The voltage when mA flows is expressed as v11TIA)'!
! - There is a limit to how low the voltage can be made, and it cannot be used as a protection element for low voltage ICs or a voltage stabilizing element at low voltages. Further, as mentioned above, since a high temperature process of 1000° C. or higher is required, there is a problem that a voltage nonlinear element cannot be directly formed on a glass substrate or a circuit board. Further, the conventional devices have a large parallel capacitance, making them unsuitable for use as switching elements for, for example, liquid crystals.
問題点全解決するための手段
この問題点全解決するために本発明は、 ＭｎＯ２全主
成分とする薄い絶縁被膜を有した微粉末状の半導体物質
が複数個集まった状態を一つの粉末とし、その粉末間も
しくは一部に上記微粉末を含む粉末間を低融点ガラスで
固め、電極を備え又なるものである。Means for Solving All Problems In order to solve all of these problems, the present invention consists of a plurality of finely powdered semiconductor materials having a thin insulating film mainly composed of MnO2, which are made into one powder. The powder is solidified with a low melting point glass between the powders or between the powders containing the above-mentioned fine powder, and an electrode is provided.
作用
この構成によれば、低電流域においても電圧非直線指数
αの大きなものが得られ、かつ電極間距離金狭く（数十
μｍ以下）して素子を形成することができ、低電圧化に
適した素子がきわめて容易に得られることとなる。また
、低融点ガラスで固めて素子形成を行うために高温プロ
セスを必要とすることなく作ることができるため１回路
基板上に素子を直接形成することができ、ＺｎＯバリス
タなどでは考えられない幅広い用途が期待できるもので
ある。さらに、粉末状の半導体物質を低融点ガラスで固
めたものであるため、それぞれの半導体物質の粉末間は
点接触となり、接触面積が小さいことから並列静電容量
の小さなものが得られ、液晶などのデバイスのスイ・ソ
チング素子として最適な素子が提供できることとなる。Effect: According to this configuration, a large voltage non-linearity index α can be obtained even in a low current range, and an element can be formed with a narrow distance between electrodes (less than several tens of μm), making it possible to reduce the voltage. A suitable element can be obtained very easily. In addition, since the device can be made by solidifying it with low-melting point glass without requiring a high-temperature process, the device can be formed directly on a single circuit board, allowing for a wide range of applications unimaginable with ZnO varistors. can be expected. Furthermore, since the powdered semiconductor material is hardened with low-melting glass, there is point contact between the powders of each semiconductor material, and the contact area is small, resulting in a small parallel capacitance. This means that it is possible to provide an element that is optimal as a switching element for such devices.
実施例 以下、本発明を実施例にもとづいて詳細に説明する。Example Hereinafter, the present invention will be explained in detail based on examples.
まず１粒子径が０．０５〜１μｍの微粒子状の酸化亜鉛
１７００〜１３００℃で焼成した後、その焼結されたｚ
ｎｏ２ｏ、ｓ〜６０μｍの粒子径（平均粒子径１〜１０
μｍ）に粉砕し、そのＺｎＯ微粉末に酸化マンガンを０
．０６〜１０ ｍｏ１％添加し、６００〜１３６０’Ｃ
で１０〜６０分間、熱処理し。First, zinc oxide in the form of fine particles with a particle size of 0.05 to 1 μm is fired at 1700 to 1300°C, and then the sintered z
no2o, particle size of s ~ 60 μm (average particle size 1 ~ 10
micrometer), and add 0 manganese oxide to the ZnO fine powder.
．． 06-10 mo1% added, 600-1360'C
Heat-treated for 10 to 60 minutes.
そのＺｎＯ微粉末表面に酸化マンガンの絶縁被膜を形成
した。ここで、微粉末状のＺｎＯの表面にはＭｎＯ２絶
縁被膜がほぼ数十〜数百人の厚さで薄く形成されている
ことが認められた。次いで、このようにして作成したＭ
ｎＯ２絶縁被膜が表面についたＺｎＯ微粉末群は弱い力
で互いに接着しているので５これを乳鉢あるいはボット
ミルでほぐし。An insulating film of manganese oxide was formed on the surface of the ZnO fine powder. Here, it was observed that a thin MnO2 insulating film was formed on the surface of the finely powdered ZnO to a thickness of approximately several tens to several hundreds of layers. Next, M created in this way
Since the ZnO fine powder group with the nO2 insulating film attached to its surface adheres to each other with weak force, 5 loosen it in a mortar or bot mill.
上記ＺｎＯ微粉末がそれぞれ複数個集まった微粉末群の
状態とした（以下、この状態のものを粉末状という）。A plurality of the above-mentioned ZnO fine powders were assembled into a fine powder group (hereinafter, this state is referred to as powder).
この時、一部に上記ＺｎＯ微粉末が単独で存在しても差
支えないものであり、このようなＺｎＯ微粉末を一部に
含んでの状態のものも粉末状という。At this time, there is no problem even if the ZnO fine powder is present alone in a part, and a state containing such ZnO fine powder in a part is also referred to as powder.
次に、上記のようにして得られたＭｎＯ２絶縁被膜が表
面に形成された粉末状のＺｎＯに、粉末間の結合を図る
絶縁性の結合剤として低融点ガラス粉末と有機バインダ
ー全添加し、混合した。ここで、結合剤としては低融点
ガラス粉末分が粉末状のＺｎＯに対して６〜２０ｗｔ％
となるようにしたものとし、それを有機バインダーと例
えば等重量で混合し、ペイント状とした。ここで、有機
バインダーとしてはエチルセルロースを使用し、その固
形分が溶剤（たとえばターピネオール）に対して１０
ｗｔ％になるように薄めたものとした。Next, a low melting point glass powder and an organic binder as an insulating binder for bonding between the powders were added to the powdered ZnO with the MnO2 insulating film formed on the surface obtained as described above, and mixed. did. Here, as a binder, the low melting point glass powder is 6 to 20 wt% based on powdered ZnO.
This was mixed with an organic binder, for example, in equal weight to form a paint. Here, ethyl cellulose is used as the organic binder, and its solid content is 10% of the solvent (for example, terpineol).
It was diluted so that it was wt%.
次いで、上記のようにして得られたペイントラ第２図に
示すようにＩＴＯ（インジウム・スズ酸化物）電極１の
設けられたガラス基板３上に例えはスクリーン印刷で塗
布し、その上に同じ＜ ＩＴＯ電極２の設けられたガラ
ス基板４を載置し、３００〜５５０℃で１ｏ〜３０分間
、大気中で熱処理し。Next, as shown in FIG. 2, the paint coat obtained as described above is coated onto a glass substrate 3 on which an ITO (indium tin oxide) electrode 1 is provided, for example by screen printing. The glass substrate 4 provided with the ITO electrode 2 was placed and heat treated in the atmosphere at 300 to 550°C for 10 to 30 minutes.
電極１．２間に電圧非直線性素子６を設けた。第１図は
、電圧非直線性素子６の拡大断面図であり、６はＺｎＯ
粉末、アはＺｎＯ粉末６の表面に施されたＭｎＯ２絶縁
被膜、８はそれらＺｎＯ粉末６間を機械的に結合してい
る絶縁性結合剤の低融点ガラスであり、この低融点ガラ
ス８でもってＺｎＯ粉末６０間は互いに固められている
。第３図はＩＴＯ電極１ａ、１ｂが設けられたガラス基
板３２Ｌ上に電圧非直線性素子５を構成した場合を示し
ている。A voltage nonlinear element 6 was provided between the electrodes 1 and 2. FIG. 1 is an enlarged sectional view of the voltage nonlinear element 6, where 6 is a ZnO
The powder, A is a MnO2 insulating coating applied to the surface of the ZnO powder 6, and 8 is a low melting point glass as an insulating binder that mechanically connects the ZnO powders 6. With this low melting point glass 8, The ZnO powders 60 are solidified together. FIG. 3 shows a case where a voltage nonlinear element 5 is constructed on a glass substrate 32L provided with ITO electrodes 1a and 1b.
次に、上記のようにして作成された電圧非直線性素子の
電圧−電流特性について説明する。まず。Next, the voltage-current characteristics of the voltage nonlinear element created as described above will be explained. first.
第４図は第２図の構成における電圧−電流特性を従来の
ＺｎＯバリスタのそれと比較して示している。本発明の
素子は、まず酸化亜鉛を７００°Ｃで焼成し、これにＭ
ｎＯ２を０．５ｍｏ１％添加したものを９００°Ｃ１６
０分間熱処理した後、この平均粒予後６〜１０μｍのＺ
ｎＯ粉末と奥野製薬■製の低融点ガラス微粉末（ＺｎＯ
粉末に対して２０ｗｔ％）に上記有機バインダーを等重
量で混合したものにおいて、素子面積ｔ１−９電極間距
離ｉ３０μｍとした場合における特性を示している。さ
て、電圧非直線性素子の電圧−電流特性は、よく知られ
ているように近似的に次式で示されている。FIG. 4 shows the voltage-current characteristics of the configuration of FIG. 2 in comparison with those of a conventional ZnO varistor. The device of the present invention is made by first firing zinc oxide at 700°C, and adding M
Added 0.5mol1% nO2 at 900°C16
After heat treatment for 0 min, this average grain prognosis was 6-10 μm.
nO powder and low melting point glass fine powder (ZnO
The graph shows the characteristics when the above organic binder is mixed in equal weight with 20 wt % based on the powder, and the device area t1-9 and the inter-electrode distance i are 30 μm. Now, as is well known, the voltage-current characteristics of a voltage nonlinear element are approximately expressed by the following equation.
１、、ＫＶ’
ここで５ 工は素子に流れる電流、Ｖは素子の電極間の
電圧、には固有抵抗の抵抗値に相当する定数、αは上述
した電圧非直線特性の指数を示しており、この電圧非直
線指数αは大きい程、電圧非直線性が優れていることに
なる。1, KV' where 5 is the current flowing through the element, V is the voltage between the electrodes of the element, is a constant corresponding to the resistance value of the specific resistance, and α is the exponent of the voltage nonlinear characteristic mentioned above. , the larger the voltage nonlinearity index α, the better the voltage nonlinearity.
第４図の特性に示されるように５特性Ｂで示される従来
のＺｎＯバリスタは低電流域において電圧非直線指数α
が小さく、 １ｏ ４ム以下の電流では良好な電圧非直
線性素子としての機能を発揮し得ない。一方、特性ムで
示される本発明の素子では低電流域においても電圧非直
線指数αが大きく。As shown in the characteristics of Fig. 4, the conventional ZnO varistor with 5 characteristics B has a voltage nonlinearity index α in the low current range.
is small, and cannot function as a good voltage nonlinear element at a current of 104 μm or less. On the other hand, the voltage nonlinearity index α is large even in the low current range in the device of the present invention shown by the characteristic .mu.
１０−１０ム程度の電流域でも十分に電圧非直線性素子
としての機能を発揮することができることを示している
。また１通常、ＺｎＯバリスタにおいてはバリスタ特性
を表わすのに１例えば素子に１ｒｎＡの電流を流した時
の電極間に現れる電圧をバリスタ電圧Ｖ１ｍムと呼び、
このバリスタ電圧ｖ１ｍＡと上記′１１ｊ、圧非直線指
数αとを使用している。本発明の素子では、上述したよ
うに、低電流域においても電圧非直線指数αが大きく、
バリスタ電圧全第４図に指すように例えばＶ４ｐｈで表
わすことができる。This shows that the device can sufficiently function as a voltage nonlinear element even in a current range of about 10-10 μm. Furthermore, in order to express the varistor characteristics of a ZnO varistor, for example, the voltage that appears between the electrodes when a current of 1 rnA is passed through the element is called the varistor voltage V1mm.
This varistor voltage v1mA, the above '11j, and the pressure nonlinearity index α are used. As mentioned above, in the device of the present invention, the voltage nonlinearity index α is large even in the low current range,
The total varistor voltage can be expressed as, for example, V4ph as shown in FIG.
このように本発明において、バリスタ電圧を低いものと
することができるのは２電極間距離を狭くして素子を形
成することができるためである。In this way, in the present invention, the varistor voltage can be made low because the element can be formed by narrowing the distance between the two electrodes.
また、本発明素子において低電流域でも電圧非直線指数
αが大きい理由は、現在のところ理由は明確とはなって
いないが、粉末状の半導体物質（ＺｎＯ）を絶縁性結合
剤の低融点ガラスでもって固めたものであるため、それ
ぞれの半導体物質の間は点接触となり、接触面積が小さ
いこと、また結合剤が絶縁性のため、漏れ電流が小さく
なっていることによるものと考えられる。Furthermore, although the reason why the voltage nonlinearity index α is large even in the low current range in the device of the present invention is not clear at present, This is thought to be due to the fact that since the semiconductor materials are solidified, there is point contact between the respective semiconductor materials, so the contact area is small, and the bonding agent is insulating, so the leakage current is small.
ここで、第４図の特性は上述したように電極間距離を３
０μｍとした素子についてのものであるが、これはＺｎ
Ｏ粉末の平均粒子径が６〜１０μｍという比較的大きい
粒子径のためにこれ以上狭くすることができないからで
ある。すなわち、ＺｎＯ粉末の平均粒子径が０．３〜３
μｍのものを使えば。Here, the characteristics shown in Fig. 4 are as follows when the distance between the electrodes is 3
This is for an element with a thickness of 0 μm;
This is because the average particle size of the O powder is relatively large, 6 to 10 μm, so it cannot be made any narrower. That is, the average particle diameter of the ZnO powder is 0.3 to 3
If you use μm ones.
電極間距離が１０μｍ程度もしくはそれ以下の素子を作
成することができるのであり、その場合においても第４
図に示すような良好な特性が得られることを本発明者ら
は実験により確認した。It is possible to create an element with an inter-electrode distance of about 10 μm or less, and even in that case, the fourth
The present inventors confirmed through experiments that good characteristics as shown in the figure can be obtained.
第６図は本発明において、酸化マンガンの添加量を変え
た場合のバリスタ電圧ｖ１ｐｈ＋電圧非直線指数αおよ
び並列静電容量Ｃの変化する様子を示している。ここで
、酸化亜鉛の焼成温度など。FIG. 6 shows how the varistor voltage v1ph+voltage nonlinearity index α and parallel capacitance C change when the amount of manganese oxide added is changed in the present invention. Here, the firing temperature of zinc oxide, etc.
その他の条件は第４図の場合の条件と同一とした。Other conditions were the same as those in the case of FIG.
第６図に示されるように、本発明素子においては並列静
電容量が従来のＺｎＯバリスタが１０００〜２００００
ＰＦであるのに対して非常に小さいものとなっている。As shown in FIG. 6, in the device of the present invention, the parallel capacitance is 1000 to 20000 compared to that of the conventional ZnO varistor.
Although it is a PF, it is very small.
この並列静電容量が本発明素子において７４％さい理由
は、上述したように半導体物質間の接触面積が小さいこ
とによるものである。The reason why this parallel capacitance is 74% smaller in the device of the present invention is that the contact area between the semiconductor materials is small, as described above.
なお５上記の実施例においては、半導体物質としては％
Ｚｎｏｔ例にとり説明したが、それ以外の半導体物質
であっても差支えないことはもちろんである。また、同
様に絶縁被膜を構成する材料としては、ＭｎＯ２単独に
限られることはなく、ＭｎＯ２に主成分として、ムｌ、
Ｔｉ、Ｓｒ、Ｍｇ。5 In the above example, the semiconductor material is %
Although the explanation has been made using Znot as an example, it goes without saying that other semiconductor materials may be used. Similarly, the material constituting the insulating film is not limited to MnO2 alone, but may include MnO2 as a main component, mulch,
Ti, Sr, Mg.
Ｎｉ、Ｏｒ、８ｉなどの金属酸化物またはこれらの金属
の有機金属化合物を単独または組合せて使用することが
できるものである。Metal oxides such as Ni, Or, and 8i or organometallic compounds of these metals can be used alone or in combination.
発明の効果
以上の説明より明らかなように本発明の電圧非直線性素
子は、低電流域における電圧非直線指数αが大きく、ま
た並列静電容量の小さな素子が得られることから、消費
電流の小さい液晶、ＫＬなどのデバイスのスイッチング
素子として最適な素子を提供できるものである。また電
極間距離を狭くして素子を形成することができるため、
バリスタ電圧の低いものが得られ、上記電圧非直線指数
αが大きいことと相まって従来のＺｎＯバリスタでは対
応することのできなかった低電圧用ＩＣの保護素子や低
い電圧における電圧安定化素子として使用することがで
きる。さらに、低融点ガラスで固めて素子形成を行うた
めに高温プロセスを必要とすることなく簡単にして作る
ことができるため５回路基板上やガラス基板上に素子を
直接形成することができるものである。このように種々
の特徴を有する本発明の電圧非直線性素子は、今までの
ＺｎＯバリスタなどでは考えられない幅広い用途が期待
できるものであり、その産業性は犬なるものである。Effects of the Invention As is clear from the above explanation, the voltage nonlinear element of the present invention has a large voltage nonlinearity index α in the low current range, and an element with small parallel capacitance can be obtained, so that current consumption can be reduced. This makes it possible to provide an element that is optimal as a switching element for devices such as small liquid crystals and KLs. In addition, since it is possible to form an element with a narrower distance between electrodes,
A low varistor voltage can be obtained, and the above-mentioned high voltage nonlinearity index α makes it possible to use it as a protection element for low voltage ICs or as a voltage stabilizing element at low voltages, which conventional ZnO varistors could not handle. be able to. Furthermore, since it can be easily manufactured without requiring high-temperature processes to form elements by solidifying it with low-melting point glass, it is possible to form elements directly on circuit boards or glass substrates. . The voltage non-linear element of the present invention having such various characteristics can be expected to have a wide range of applications unimaginable for conventional ZnO varistors and the like, and its industrial applicability is excellent.
第１図は本発明に係わる電圧非直線性素子の一実施例を
示す拡大断面図、第２図および第３図はそれぞれ本発明
の素子をガラス基板上に設けた実施例を示す断面図、第
４図は本発明素子と従来のＺｎＯバリスタの電圧−電流
特性を示す図、第６図は本発明素子においてＭｎＯ２の
添加量を変えた場合の電圧非直線指数α、バリスタ電圧
Ｖ１４Ａおよび並列静電容量Ｃの変化する様子を示す図
である。
１−１ａ 、 １ｂ 、 ２−・−Ｉ Ｔ Ｏ電極、３
−３ａ４・・・・・・ガラス基板、５・・・・・・電圧
非直線性素子、６・・・・ＺｎＯ粉末、７・・・・・・
ＭｎＯ２絶縁被膜、８・・・・・・低融点ガラス。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名の
城
第４図
一± ！ミ＜ｖ）
第５図FIG. 1 is an enlarged sectional view showing an embodiment of a voltage nonlinear element according to the present invention, and FIGS. 2 and 3 are sectional views showing an embodiment in which the element of the present invention is provided on a glass substrate, respectively. Figure 4 is a diagram showing the voltage-current characteristics of the device of the present invention and a conventional ZnO varistor, and Figure 6 is a diagram showing the voltage nonlinearity index α, varistor voltage V14A, and parallel static voltage when the amount of MnO2 added is changed in the device of the present invention. FIG. 3 is a diagram showing how the capacitance C changes. 1-1a, 1b, 2-・-ITO electrode, 3
-3a4...Glass substrate, 5...Voltage nonlinear element, 6...ZnO powder, 7...
MnO2 insulation coating, 8...Low melting point glass. Name of agent: Patent attorney Toshio Nakao and one other person. Mi<v) Figure 5
Claims (1)
末状の半導体物質が複数個集まった状態を一つの粉末と
し、その粉末間もしくは一部に上記微粉末を含む粉末間
を低融点ガラスで固め、電極を備えてなることを特徴と
する電圧非直線性素子。A state in which a plurality of finely powdered semiconductor substances with a thin insulating film mainly composed of MnO_2 are gathered together into one powder, and the spaces between the powders or between the powders that partially contain the above fine powder are solidified with low-melting glass. , a voltage nonlinear element comprising an electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61035969A JPS62193203A (en) | 1986-02-20 | 1986-02-20 | Voltage nonlinear device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61035969A JPS62193203A (en) | 1986-02-20 | 1986-02-20 | Voltage nonlinear device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62193203A true JPS62193203A (en) | 1987-08-25 |
Family
ID=12456757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61035969A Pending JPS62193203A (en) | 1986-02-20 | 1986-02-20 | Voltage nonlinear device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62193203A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5083790A (en) * | 1973-11-28 | 1975-07-07 | ||
| JPS51100298A (en) * | 1975-02-28 | 1976-09-04 | Seikosha Kk | |
| JPS5344899A (en) * | 1976-09-13 | 1978-04-22 | Gen Electric | Metal oxide varistor and method of manufacture thereof |
-
1986
- 1986-02-20 JP JP61035969A patent/JPS62193203A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5083790A (en) * | 1973-11-28 | 1975-07-07 | ||
| JPS51100298A (en) * | 1975-02-28 | 1976-09-04 | Seikosha Kk | |
| JPS5344899A (en) * | 1976-09-13 | 1978-04-22 | Gen Electric | Metal oxide varistor and method of manufacture thereof |
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