JPS62190810A - Voltage nonlinear device - Google Patents
Voltage nonlinear deviceInfo
- Publication number
- JPS62190810A JPS62190810A JP61034641A JP3464186A JPS62190810A JP S62190810 A JPS62190810 A JP S62190810A JP 61034641 A JP61034641 A JP 61034641A JP 3464186 A JP3464186 A JP 3464186A JP S62190810 A JPS62190810 A JP S62190810A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- zno
- varistor
- voltage nonlinear
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011230 binding agent Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 51
- 239000011787 zinc oxide Substances 0.000 description 25
- 239000000843 powder Substances 0.000 description 15
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 9
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 8
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Inorganic materials O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 229910000417 bismuth pentoxide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 235000004936 Bromus mango Nutrition 0.000 description 1
- -1 Co A 7J Inorganic materials 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- 240000007228 Mangifera indica Species 0.000 description 1
- 235000014826 Mangifera indica Nutrition 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 235000009184 Spondias indica Nutrition 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は印加電圧によって抵抗値が変化する電圧非直線
性素子に関するもので、電圧安定化、異常電圧制御、さ
らにはマ） ＩＪフックス動の液晶、！Ｌなどの表示デ
バイスのスイッチング素子などに利用されるものである
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a voltage nonlinear element whose resistance value changes depending on an applied voltage, and is useful for voltage stabilization, abnormal voltage control, and also for ma) IJ-Fuchs dynamic liquid crystals; ! It is used for switching elements of display devices such as L.
従来の技術
従来の電圧非直線性素子は、酸化亜鉛（ＺｎＯ）に酸化
ビス？ 、Ｘ （Ｂｉ２Ｏ３） 、酸化コバルト（Ｃｏ
２０ｓ）、酸化マンゴｙ（Ｍｎ０２）、酸化アンチモｙ
（Ｓｂ２０５ ）などの酸化物を添加して、１ｏｏＯ〜
１３６０℃で焼結したＺｎＯバリスタなど、種々のもの
がある。Conventional technology Conventional voltage nonlinear elements are made of zinc oxide (ZnO) or bis oxide. , X (Bi2O3), cobalt oxide (Co
20s), mango oxide (Mn02), antimony oxide
By adding oxides such as (Sb205),
There are various types such as ZnO varistors sintered at 1360°C.
その中で、ＺｎＯバリスタは電圧非直線指数α、サージ
耐量が大きいことから、最も一般的に使われている。（
特公昭４６−１９４７２号公報参照）発明が解決しよう
とする問題点
このような従来の電圧非直線性素子は、ＺｎＯバリスタ
を初めとして、素子厚みを薄く（数十μｍ以下）するこ
とに限界があるため、バリスタ電圧（バリスタに電流１
ｍムを流した時の電圧ｖ１ｍムで表される）を低くする
ことに限界があり、低電圧用ＩＣの保護素子や低い電圧
における電圧安定化素子として使えないものであった。Among them, ZnO varistors are most commonly used because of their large voltage nonlinearity index α and surge resistance. (
(Refer to Japanese Patent Publication No. 46-19472) Problems to be Solved by the Invention In such conventional voltage nonlinear elements, including ZnO varistors, there is a limit to how thin the element can be (less than several tens of μm). Therefore, the varistor voltage (current 1 to the varistor
There is a limit to lowering the voltage (expressed as v1mm) when a current is applied, and it cannot be used as a protection element for low-voltage ICs or a voltage stabilizing element at low voltages.
また、上述したように１ｏＯｏ℃以上の高温プロセスを
必要とするため、ガラス基板上あるいは回路基板上に電
圧非直線性素子を直接形成できないという問題があった
。さらに、従来のものは並列静電容量が大きく、例えば
液晶などのスイッチング素子としては不適当なものであ
るなどの問題点を有していた。Further, as described above, since a high temperature process of 100° C. or higher is required, there is a problem that a voltage nonlinear element cannot be directly formed on a glass substrate or a circuit board. Furthermore, conventional devices have a large parallel capacitance, making them unsuitable for use as switching elements for liquid crystals, for example.
問題点を解決するための手段 この問題点を解決するために本発明は、Ｂｉ２Ｏ５。Means to solve problems In order to solve this problem, the present invention uses Bi2O5.
Ｃｏ２Ｏ３、ＭｎＯ２およびＳｂ２Ｏ５の全てを少なく
とも含んでなる薄い絶縁被膜を施した微粉末状の半導体
物質を絶縁性の結合剤で固め、電極を備えてなるもので
ある。It is made by solidifying a finely powdered semiconductor material with a thin insulating coating containing at least all of Co2O3, MnO2 and Sb2O5 with an insulating binder, and is provided with an electrode.
作用
この構成によれば、低電流域においても電圧非直線指数
αの大きなものが得られ、かつ電極間距離を狭く（数十
μｍ以下）して素子を形成することができ、低電圧化に
適した素子がきわめて容易に得られることとなる。また
、結合剤で固めて素子形成を行う際に高温プロセスを必
要とすることなく作ることができるだめ、回路基板上に
素子を直接形成することができ、ＺｎＯバリスタなどで
は考えられない幅広い用途が期待できるものである。Effect: According to this configuration, a large voltage non-linearity index α can be obtained even in a low current range, and an element can be formed with a narrow distance between electrodes (several tens of μm or less), making it possible to reduce voltage. A suitable element can be obtained very easily. In addition, since it can be made without requiring high-temperature processes when solidifying with a binder and forming elements, it is possible to form elements directly on circuit boards, and it has a wide range of applications that cannot be imagined with ZnO varistors. This is something to look forward to.
さらに、微粉末状の半導体物質を固めたものであるため
、それぞれの半導体物質の微粉末間は点接触となり、接
触面積が小さいことから並列静電容量の小さなものが得
られ、液晶などのデバイスのスイッチング素子として最
適な素子が提供できることとなる。Furthermore, since it is a solidified form of semiconductor material in the form of fine powder, there is point contact between the fine powders of each semiconductor material, and because the contact area is small, it is possible to obtain a small parallel capacitance, which is useful for devices such as liquid crystals. This means that an optimal element can be provided as a switching element.
実施例 以下、本発明を実施例にもとづいて詳細に説明する。Example Hereinafter, the present invention will be explained in detail based on examples.
まず、粒子径が０．０６〜１μｍの微粒子状の酸化亜鉛
を７００〜１３ｏＯ℃で焼成した後、その溶結されたＺ
ｎＯを０．６〜５０μｍの粒子径（平均粒子径１〜１０
μｍ）に粉砕し、そのＺｎＯ微粉末にＢｉ２Ｏ５、Ｃｏ
２Ｏ３、ＭｎＯ２、Ｓｂ２Ｏ５の総量を０．０Ｓ〜１（
１１０１係添加し、６００〜１３５０℃で１０〜６ｏ分
間、熱処理し、そのＺｎＯ微粉末表面にこれら酸化物の
絶縁被膜を形成した。ここで、微粉末状のＺｎＯの表面
には上記酸化物の絶縁被膜がほぼ数十〜数百人の厚さで
薄く形成されていることが認められた。次いで、このよ
うにして作成した酸化物の絶縁被膜が表面についたＺｎ
Ｏ微粉末群は弱い力で互いに接着しているので、これを
乳鉢あるいはボットハルでほぐし、微粉末状とした。次
に、上記のようにして得られた酸化物絶縁被膜が表面に
形成された微粉末状のＺｎＯＫ、微粉末間の結合を図る
絶縁性の結合剤（バインダー）としてポリイミド樹脂を
添加し、混合した。ここで、結合剤としてはポリイばド
樹脂の固形分が溶剤（例えばｎ−メチル−２−ピロリド
ン）に対して５ｗｔ％となるように薄めたものとし、そ
れをＺｎＯ微粉末と例えば等重量で混合し、ペイント状
とした。次いで、上記のようにして得られたペイントを
第２図に示すようにＩＴＯ（インジウム・スズ酸化物）
電極１の設けられたガラス基板ａ上に例えばスクリーン
印刷で塗布し、その上に同じ（ＩＴＯ電極２の設けられ
たガラス基板４を載置し、２８０〜４００℃で３０分間
、大気中で硬化させ、電極１゜２間に電圧非直線性素子
５を設けた。第１図は、電圧非直線性素子６の拡大断面
図であり、６はＺｎＯ微粉末、７はＺｎＯ微粉末６の表
面に施された酸化物絶縁被膜、８はそれらＺｎＯ微粉末
６間を機械的に結合している絶縁性の結合剤であり、こ
の結合剤８でもってＺｎＯ微粉末６の間は互いに固めら
れている。第３図はＩＴＯ電極１ａ、１ｂが設けられた
ガラス基板３２Ｌ上に電圧非直線性素子６を構成した場
合を示している。First, fine particulate zinc oxide with a particle size of 0.06 to 1 μm is fired at 700 to 13oO℃, and then the welded Z
nO with a particle size of 0.6 to 50 μm (average particle size of 1 to 10
micrometer), and added Bi2O5, Co to the ZnO fine powder.
The total amount of 2O3, MnO2, and Sb2O5 is 0.0S to 1 (
1101 was added and heat treated at 600 to 1350°C for 10 to 60 minutes to form an insulating film of these oxides on the surface of the ZnO fine powder. Here, it was observed that an insulating film of the above-mentioned oxide was formed on the surface of the finely powdered ZnO to a thickness of about several tens to several hundreds. Next, the Zn film with the oxide insulating film created in this way attached to the surface
Since the O fine powder group adhered to each other with weak force, it was loosened in a mortar or Bothull to form a fine powder. Next, the finely powdered ZnOK with the oxide insulating film formed on the surface obtained as described above, and a polyimide resin as an insulating binder for bonding between the fine powders were added and mixed. did. Here, as a binder, the solid content of the polyamide resin is diluted to 5 wt% with respect to the solvent (for example, n-methyl-2-pyrrolidone), and it is mixed with ZnO fine powder in an equal weight, for example. The mixture was mixed to form a paint. Next, the paint obtained as described above was coated with ITO (indium tin oxide) as shown in FIG.
It is coated on a glass substrate a provided with an electrode 1 by, for example, screen printing, and the same glass substrate 4 provided with an ITO electrode 2 is placed on top of it, and cured in the air at 280 to 400° C. for 30 minutes. A voltage non-linear element 5 was provided between the electrodes 1.degree.. FIG. The oxide insulating coating 8 is an insulating binder that mechanically binds the ZnO fine powders 6 together, and the ZnO fine powders 6 are hardened together by the binder 8. 3 shows a case where a voltage nonlinear element 6 is constructed on a glass substrate 32L provided with ITO electrodes 1a and 1b.
次に、上記のようにして作成された電圧非直線性素子の
電圧−電流特性について説明する。まず、第４図は第２
図の構成における電圧−電流特性を従来のＺｎＯバリス
タのそれと比較して示している。Next, the voltage-current characteristics of the voltage nonlinear element created as described above will be explained. First, Figure 4 shows the second
The voltage-current characteristics of the configuration shown in the figure are compared with those of a conventional ZnO varistor.
本発明の素子は、まず酸化亜鉛を７００’Ｃで焼成し、
これにＢｉ２Ｏ３、Ｃｏ２Ｏ３、ＭｎＯ２、Ｓｂ２Ｏ３
をそれぞれ０．２ｍ０Ｌ％、つまり総量で０．８ｍｏｌ
係添加したものを９００℃、ｅｏ分間熱処理した後、こ
の平均粒子径５〜１０μｍのＺｎＯ微粉末と結合剤とを
等重量で混合したものにおいて、素子面積を１ｍが、電
極間距離を３０μｍとした場合における特性を示してい
る。さて、電圧非直線性素子の電圧−電流特性は、よく
知られているように近似的に次式で示されている。The element of the present invention is produced by first firing zinc oxide at 700'C,
In addition, Bi2O3, Co2O3, MnO2, Sb2O3
0.2m0L% each, that is, the total amount is 0.8mol
After heat-treating the ZnO fine powder with an average particle size of 5 to 10 μm and the binder in equal weights, the element area was 1 m and the distance between the electrodes was 30 μm. This shows the characteristics when Now, as is well known, the voltage-current characteristics of a voltage nonlinear element are approximately expressed by the following equation.
ににＶ“
ここで、工は素子に流れる電流、Ｖは素子の電極間の電
圧、Ｋは固有抵抗の抵抗値に相当する定数、αは上述し
た電圧非直線特性の指数を示しており、この電圧非直線
指数αは大きい程、電圧非直線性が優れていることにな
る。niV" Here, E is the current flowing through the element, V is the voltage between the electrodes of the element, K is a constant corresponding to the resistance value of the specific resistance, and α is the exponent of the voltage nonlinear characteristic mentioned above. The larger the voltage nonlinearity index α, the better the voltage nonlinearity.
第４図の特性に示されるように、特性Ｂで示される従来
のＺｎＯバリスタは低電流域において電圧非直線指数α
が小さく、１０ Ａ以下の電流では良好な電圧非直線
性素子としての機能を発揮し得ない。一方、特性人で示
される本発明の素子では低電流域においても電圧非直線
指数αが大きく、１Ｏ−１０Ａ程度の電流域でも十分に
電圧非直線性素子としての機能を発揮することができる
ことを示している。また、通常、ＺｎＯバリスタにおい
てはバリスタ特性を表わすのに、例えば素子に１ ｍＡ
の電流を流した時の電極間に現れる電圧をバリスタ電圧
ｖ１ｍＡと呼び、このバリスタ電圧Ｖ＋ｍムと上記電圧
非直線指数αとを使用している。本発明の素子では、上
述したように、低電流域においても電圧非直線指数αが
大きく、バリスタ電圧を第４図に示すように例えばｖリ
ムで表わすことができる。As shown in the characteristics in Figure 4, the conventional ZnO varistor shown by characteristic B has a voltage nonlinearity index α in the low current region.
is small, and cannot function as a good voltage nonlinear element at a current of 10 A or less. On the other hand, in the device of the present invention as shown by the characteristics, the voltage nonlinearity index α is large even in the low current range, and it can sufficiently function as a voltage nonlinear device even in the current range of about 10-10A. It shows. In addition, normally, in order to express the varistor characteristics in a ZnO varistor, for example, 1 mA is applied to the element.
The voltage that appears between the electrodes when a current of is applied is called the varistor voltage v1mA, and this varistor voltage V+mA and the voltage nonlinearity index α are used. As described above, in the device of the present invention, the voltage nonlinearity index α is large even in the low current range, and the varistor voltage can be expressed, for example, by a v-rim as shown in FIG.
このように本発明において、バリスタ電圧を低いものと
することができるのは、電極間距離を狭くして素子を形
成することができるためである。In this way, in the present invention, the varistor voltage can be made low because the element can be formed by narrowing the distance between the electrodes.
また、本発明素子において低電流域でも電圧非直線指数
αが大きい理由は、現在のところ理由は明確とはなって
い々いが、微粉末状の半導体物質（ＺｎＯ）を絶縁性の
結合剤でもって固めたものであるため、それぞれの半導
体物質の間は点接触となり、接触面積が小さいこと、ま
た結合剤が絶縁性のため、漏れ電流が小さくなっている
ことによるものと考えられる。Furthermore, the reason why the voltage nonlinearity index α is large even in the low current range in the device of the present invention is not clear at present, but it is possible to This is thought to be due to the fact that since it is solidified, there is point contact between the respective semiconductor materials, and the contact area is small, and the leakage current is small because the bonding agent is insulating.
ここで、第４図の特性は上述したように電極間距離を３
０μｍとした素子についてのものであるが、これはＺｎ
Ｏ微粉末の平均粒子径が６〜１０μｍという比較的大き
な粒子径のだめにこれ以上狭くすることができないから
である。すなわち、ＺｎＯ微粉末の平均粒子径が０．３
〜３μｍのものを使えば、電極間距離が１０μｍ程度も
しくはそれ以下の素子を作成することができるのであり
、その場合においても第４図に示すような良好な特性が
得られることを本発明者らは実験により確認した。Here, the characteristics shown in Fig. 4 are as follows when the distance between the electrodes is 3
This is for an element with a thickness of 0 μm;
This is because the average particle diameter of the O fine powder is relatively large, 6 to 10 μm, and cannot be made any narrower. That is, the average particle diameter of the ZnO fine powder is 0.3
The inventor has found that if a material with a diameter of ~3 μm is used, it is possible to create an element with an interelectrode distance of approximately 10 μm or less, and even in that case, good characteristics as shown in FIG. 4 can be obtained. This was confirmed through experiments.
第６図は本発明において、Ｂｉ２Ｏ３、Ｃｏ２Ｏ３、Ｍ
ｎＯ２。Figure 6 shows that Bi2O3, Co2O3, M
nO2.
Ｓｂ２Ｏ５の総添加量を変えた場合のバリスタ電圧ｖリ
ム、電圧非直線指数αおよび並列静電容量Ｃの変化する
様子を示している。ここで、酸化亜鉛の焼成温度など、
その他の条件は第４図の場合の条件と同一とした。第５
図に示されるように、本発明素子においては並列静電容
量が従来のＺｎＯバリスタが１ｏｏＯ〜２００００ＰＦ
であるのに対して非常に小さいものとなっている。この
並列静電容量が本発明素子において小さい理由は、上述
したように半導体物質間の接触面積が小さいことによる
ものである。It shows how the varistor voltage vrim, voltage nonlinearity index α, and parallel capacitance C change when the total addition amount of Sb2O5 is changed. Here, the firing temperature of zinc oxide, etc.
Other conditions were the same as those in the case of FIG. Fifth
As shown in the figure, in the device of the present invention, the parallel capacitance of the conventional ZnO varistor is 1ooO~20000PF.
However, it is very small. The reason why this parallel capacitance is small in the device of the present invention is that the contact area between the semiconductor materials is small, as described above.
なお、上記の実施例においては、半導体物質としては、
ＺｎＯを例にとり説明したが、それ以外の半導体物質で
あっても差支えないことはもちろんである。また、同様
に絶縁被膜を構成する材料としては、Ｂｉ２Ｏ３、Ｃｏ
２Ｏ３、ＭｎＯ２、Ｓｂ２Ｏ５だけに限られることはな
く、Ｂｉ、Ｇｏ、Ｍｎ、Ｓｂの全てを主成分として、Ａ
７Ｊ、Ｔｉ、Ｓｒ、Ｍｇ、Ｎｉ、Ｏｒ、Ｓｉ などの金
属酸化物またはこれら金属の有機金属化合物を単独また
は組合せて使用することができるものである０
さらに、微粉末状の半導体物質を固める絶縁性の結合剤
としては、ポリイミド樹脂の他にも種々考えられること
はもちろんであシ、熱硬化性樹脂、たとえばフェノール
樹脂、ツーラン樹脂、ユリア樹脂、メラミン樹脂、不飽
和ポリエステル樹脂、ジアリルフタレート樹脂、エポキ
シ樹脂、ポリウレタン樹脂、ケイ素樹脂などでも良いも
のである。In addition, in the above embodiment, the semiconductor material is
Although ZnO has been described as an example, it goes without saying that other semiconductor materials may be used. Similarly, materials constituting the insulating film include Bi2O3, Co
A
7J, metal oxides such as Ti, Sr, Mg, Ni, Or, Si, or organometallic compounds of these metals can be used alone or in combination.0 Furthermore, an insulator for solidifying fine powder semiconductor materials. In addition to polyimide resins, various other binders are of course possible, including thermosetting resins such as phenol resins, Touran resins, urea resins, melamine resins, unsaturated polyester resins, diallyl phthalate resins, Epoxy resin, polyurethane resin, silicone resin, etc. may also be used.
発明の効果
以上の説明より明らかなように本発明の電圧非直線性素
子は、低電流域における電圧非直線指数αが大きく、ま
た並列静電容量の小さな素子が得られることから、消費
電流の小さい液晶、ＫＬなどのデバイスのスイッチング
素子として最適な素子を提供できるものである。また、
電極間距離を狭くして素子を形成することができるため
、バリスタ電圧の低いものが得られ、上記電圧非直線指
数αが大きいことと相まって従来のＺｎＯバリスタでは
対応することのできなかった低電圧用ＩＣの保護素子や
低い電圧における電圧安定化素子として使用することが
できる。さらに、結合剤で固めて素子形成を行う際に高
温プロセスを必要とすることなく簡単にして作ることが
できるため、回路基板上やガラス基板上に素子を直接形
成することができるものである。このように種々の特徴
を有する本発明の電圧非直線性素子は、今までのＺｎＯ
バリスタなどでは考えられない幅広い用途が期待できる
ものであり、その産業性は大なるものである０Effects of the Invention As is clear from the above explanation, the voltage nonlinear element of the present invention has a large voltage nonlinearity index α in the low current range, and an element with small parallel capacitance can be obtained, so that current consumption can be reduced. This makes it possible to provide an element that is optimal as a switching element for devices such as small liquid crystals and KLs. Also,
Since the device can be formed by narrowing the distance between the electrodes, a low varistor voltage can be obtained, and combined with the large voltage nonlinearity index α mentioned above, it is possible to achieve a low voltage that could not be supported by conventional ZnO varistors. It can be used as a protection element for commercial ICs or as a voltage stabilizing element at low voltages. Furthermore, since it can be easily manufactured without requiring a high-temperature process when forming an element by solidifying it with a binder, the element can be directly formed on a circuit board or a glass substrate. The voltage nonlinear element of the present invention having various features as described above is different from the conventional ZnO
It can be expected to have a wide range of applications that cannot be imagined with baristas, etc., and its industrial potential is great.
第１図は本発明に係わる電圧非直線性素子の一実施例を
示す拡大断面図、第２図および第３図はそれぞれ本発明
の素子をガラス基板上に設けた実施例を示す断面図、第
４図は本発明素子と従来のＺｎＯバリスタの電圧−電流
特性を示す図、第５図は本発明素子においてＢｉ２Ｏ３
、Ｃｏ２Ｏ３、ＭｎＯ２。
５ｂ２ｏｓ の総添加量を変えた場合の電圧非直線指
数α、バリスタ電圧ｖ１Ａ１ムおよび並列静電容量Ｃの
変化する様子を示す図である。
１．１１Ｌ、１ｂ、２−・・・−ＩＴＯ電極、３．３＆
。
４・・・・・・ガラス基板、６・・・・・・電圧非直線
性素子、６・・・・・・ＺｎＯ微粉末、７・・・・・・
添加物による酸化物絶縁被膜、８・・・・・・結合剤。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
第３図
第４図
一力 電圧（ｖ）FIG. 1 is an enlarged sectional view showing an embodiment of a voltage nonlinear element according to the present invention, and FIGS. 2 and 3 are sectional views showing an embodiment in which the element of the present invention is provided on a glass substrate, respectively. FIG. 4 is a diagram showing the voltage-current characteristics of the device of the present invention and a conventional ZnO varistor, and FIG. 5 is a diagram showing the voltage-current characteristics of the device of the present invention and the conventional ZnO
, Co2O3, MnO2. FIG. 3 is a diagram showing how the voltage non-linearity index α, the varistor voltage v1A1m, and the parallel capacitance C change when the total amount of 5b2os added is changed. 1.11L, 1b, 2-...-ITO electrode, 3.3&
. 4...Glass substrate, 6...Voltage nonlinear element, 6...ZnO fine powder, 7...
Oxide insulation coating with additives, 8...Binder. Name of agent: Patent attorney Toshio Nakao and 1 other person 1st
Figure 2 Figure 3 Figure 4 Voltage (v)
Claims (1)
Ｓｂ＿２Ｏ＿３の全てを少なくとも含んでなる薄い絶縁
被膜を施した微粉末状の半導体物質を絶縁性の結合剤で
固め、電極を備えてなることを特徴とする電圧非直線性
素子。A voltage nonlinear element comprising an electrode formed by solidifying a finely powdered semiconductor material coated with a thin insulating film containing at least all of Bi_2O_3, Co_2O_3, MnO_2 and Sb_2O_3 with an insulating binder. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61034641A JPS62190810A (en) | 1986-02-18 | 1986-02-18 | Voltage nonlinear device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61034641A JPS62190810A (en) | 1986-02-18 | 1986-02-18 | Voltage nonlinear device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62190810A true JPS62190810A (en) | 1987-08-21 |
Family
ID=12420053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61034641A Pending JPS62190810A (en) | 1986-02-18 | 1986-02-18 | Voltage nonlinear device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62190810A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5148779A (en) * | 1990-05-09 | 1992-09-22 | Koyo Seiko Co., Ltd. | Valve rotating apparatus of internal-combustion engine |
-
1986
- 1986-02-18 JP JP61034641A patent/JPS62190810A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5148779A (en) * | 1990-05-09 | 1992-09-22 | Koyo Seiko Co., Ltd. | Valve rotating apparatus of internal-combustion engine |
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