JPS62190812A - Voltage nonlinear device - Google Patents
Voltage nonlinear deviceInfo
- Publication number
- JPS62190812A JPS62190812A JP61034643A JP3464386A JPS62190812A JP S62190812 A JPS62190812 A JP S62190812A JP 61034643 A JP61034643 A JP 61034643A JP 3464386 A JP3464386 A JP 3464386A JP S62190812 A JPS62190812 A JP S62190812A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- zno
- varistor
- present
- voltage nonlinear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000843 powder Substances 0.000 claims description 18
- 239000011230 binding agent Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 53
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 26
- 239000011787 zinc oxide Substances 0.000 description 26
- 239000011521 glass Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
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- 229920005989 resin Polymers 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
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- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007849 furan resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
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- 229920005749 polyurethane resin Polymers 0.000 description 1
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- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は印加電圧によって抵抗値が変化する電圧非直線
性素子に関するもので、電圧安定化、異常電圧制御、さ
らにはマトリックス駆動の液晶、ＫＬなどの表示デバイ
スのスイッチング素子などに利用されるものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a voltage nonlinear element whose resistance value changes depending on an applied voltage, and is useful for voltage stabilization, abnormal voltage control, and matrix-driven liquid crystal, KL, etc. It is used in switching elements of display devices, etc.
従来の技術
従来の電圧非直線性素子は、酸化亜鉛（ＺｎＯ）ニ酸化
ヒスマス（Ｂｉ２０３）、酸化コノクルト（Ｃｏ２０５
）、酸化マンガン（ＭｎＯ２） 、酸化アンチモン（Ｓ
ｂ２０ｓ）などの酸化物を添加して、１ｏＱＯ〜１３６
０’Ｃで焼結したＺｎＯバリスタなど、種々のものがあ
る。その中で、ＺｎＯバリスタは電圧非直線指数α、サ
ージ耐量が大きいことから、最も一般的に使われている
。（特公昭４６−１９４７２号公報参照）
発明が解決しようとする問題点
このような従来の電圧非直線性素子は、ＺｎＯバリスタ
を初めとして、素子厚みを薄く（数十μｍ以下）するこ
とに限界があるため、バリスタ電圧（バリスタに電流１
！ＩＩＡを流した時の電圧ＶｊｍＡで表される）を低く
することに限界があり、低電圧用ＩＣの保護素子や低い
電圧における電圧安定化素子として使えないものであっ
た。また、上述したように１０００°Ｃ以上の高温プロ
セスを必要とするため、ガラス基板上あるいは回路基板
上に電圧非直線性素子を直接形成できないという問題が
あった。さらに、従来のものは並列静電容量が大きく、
例えば液晶などのスイッチング素子としては不適当なも
のであるなどの問題点を有していた０
問題点を解決するための手段
この問題点を解決するために本発明は、ＭｎＯ２を主成
分とする薄い絶縁被膜を施した微粉末状の半導体物質を
絶縁性の結合剤で固め、電極を備えてなるものである。2. Prior Art Conventional voltage nonlinear elements include zinc oxide (ZnO), hismuth dioxide (Bi203), and conocret oxide (Co205).
), manganese oxide (MnO2), antimony oxide (S
By adding oxides such as b20s), 1oQO ~ 136
There are various types such as ZnO varistors sintered at 0'C. Among them, ZnO varistors are most commonly used because of their large voltage nonlinearity index α and surge resistance. (Refer to Japanese Patent Publication No. 46-19472) Problems to be Solved by the Invention Conventional voltage non-linear elements such as these, including ZnO varistors, have limitations in making the element thickness thin (several tens of μm or less). Therefore, the varistor voltage (current 1 in the varistor)
! There is a limit to lowering the voltage (expressed as VjmA) when IIA is applied, and it cannot be used as a protection element for low voltage ICs or a voltage stabilizing element at low voltages. Further, as described above, since a high temperature process of 1000° C. or higher is required, there is a problem that a voltage nonlinear element cannot be directly formed on a glass substrate or a circuit board. Furthermore, the conventional type has a large parallel capacitance,
For example, the present invention has problems such as being unsuitable for switching elements such as liquid crystals.Means for Solving the ProblemsTo solve this problem, the present invention proposes a method using MnO2 as a main component. It consists of a finely powdered semiconductor material coated with a thin insulating coating, hardened with an insulating binder, and equipped with an electrode.
作用
この構成によれば、低電流域においても電圧非直線指数
αの大きなものが得られ、かつ電極間距離を狭く（数十
μｍ以下）して素子を形成することができ、低電圧化に
適した素子がきわめて容易に得られることとなる。また
、結合剤で固めて素子形成を行う際に高温プロセスを必
要とすることなく作ることができるため、回路基板上に
素子を直接形成することができ、ＺｎＯバリスタなどで
は考えられない幅広い用途が期待できるものである。さ
らに、微粉末状の半導体物質を固めたものでおるため、
それぞれの半導体物質の微粉末間は点接触となり、接触
面積が小さいことから並列静電容量の小さなものが得ら
れ、液晶などのデバイスのスイッチング素子として最適
な素子が提供できることとなる。Effect: According to this configuration, a large voltage non-linearity index α can be obtained even in a low current range, and an element can be formed with a narrow distance between electrodes (several tens of μm or less), making it possible to reduce voltage. A suitable element can be obtained very easily. In addition, since it can be made without requiring high-temperature processes when solidifying it with a binder and forming the device, the device can be formed directly on the circuit board, allowing for a wide range of applications unimaginable for ZnO varistors and the like. This is something to look forward to. Furthermore, since it is made of solidified fine powder semiconductor material,
There is point contact between the fine powders of each semiconductor material, and since the contact area is small, a device with a small parallel capacitance can be obtained, making it possible to provide an element that is optimal as a switching element for devices such as liquid crystals.
実施例 以下、本発明を実施例にもとづいて詳細に説明する。Example Hereinafter, the present invention will be explained in detail based on examples.
まず、粒子径が０．０６〜１μｍの微粒子状の酸化亜鉛
を７００〜１３００’Ｃで焼成した後、その焼結された
ＺｎＯを０．５〜６０μｍの粒子径（平均粒子径１〜１
０μｍ）に粉砕し、そのＺｎＯ微粉末に酸化マンガン’
ｉｏ、０５〜１０ｍｏ１％添加し、６ｏＯ〜１３５０℃
で１０〜６０分間、熱処理し、そのＺｎＯ微粉末表面に
酸化マンガンの絶縁被膜を形成した。ここで、微粉末状
のＺｎＯの表面にはＭｎＯ２絶縁被膜がほぼ数十〜数百
人の厚さで薄く形成されていることが認められた。次い
で、このようにして作成し７２Ｍｎ０２絶縁被膜が表面
についたＺｎＯ微粉末群は弱い力で互いに接着している
ので、これを乳鉢あるいはボヮトミルでほぐし微粉末状
とした。次Ｋ、上記のようにして得られたＭｎＯ２絶縁
被膜が表面に形成された微粉末状のＺｎＯに、微粉末間
の結合を図る絶縁性の結合剤、（バインダー）としてポ
リイミド樹脂を添加し、混合した。ここで、結合剤とし
てはポリイミド樹脂の固形分が溶剤（例えばｎ−メチル
−２−ピロリドン）に対して５ ｗｔ ％となるように
薄めたものとし、それｆ ＺｎＯ微粉末と例えば等重
量で混合し、ペイント状とし念。次いで、上記のように
して得られたペイントを第２図に示すようにＩ’ｒＯ（
インジウム・スズ酸化物）電極１の設けられたガラス基
板ａ上に例えばスクリーン印刷で塗布し、その上に同じ
（ＩＴＯ電極２の設けられたガラス基板４を載置し、２
８０〜４ｏｏ″Ｃで３０分間、大気中で硬化させ、電極
１．２間に電圧非直線性素子５を設けた。第１図は、電
圧非直線性素子６の拡大断面図であり、６はＺｎＯ微粉
末、７はＺｎＯ微粉末６の表面に施されたＭｎＯ２絶縁
被膜、８はそれらＺｎＯ微粉末６間を機械的に結合して
いる絶縁性の結合剤であシ、この結合剤８でもってＺｎ
Ｏ微粉末６０間は互いに固められている。First, fine particulate zinc oxide with a particle size of 0.06 to 1 μm is fired at 700 to 1300'C, and then the sintered ZnO is heated to a particle size of 0.5 to 60 μm (average particle size of 1 to 1
0 μm), and the ZnO fine powder is mixed with manganese oxide.
io, 05~10mo1% added, 6oO~1350℃
A heat treatment was performed for 10 to 60 minutes to form an insulating film of manganese oxide on the surface of the ZnO fine powder. Here, it was observed that a thin MnO2 insulating film was formed on the surface of the finely powdered ZnO to a thickness of approximately several tens to several hundreds of layers. Next, since the ZnO fine powders thus produced and having the 72Mn02 insulating film attached to their surfaces adhered to each other with weak force, they were loosened in a mortar or a bottom mill to form fine powders. Next, polyimide resin is added as an insulating binder (binder) to the finely powdered ZnO on which the MnO2 insulating film obtained as above is formed, and the fine powders are bonded together. Mixed. Here, the binder is a polyimide resin diluted so that the solid content is 5 wt % with respect to the solvent (for example, n-methyl-2-pyrrolidone), and mixed with the ZnO fine powder in an equal weight, for example. And just in case it looks like paint. Next, the paint obtained as described above was treated with I'rO(
Indium tin oxide) is coated on a glass substrate a provided with an electrode 1, for example, by screen printing, and a glass substrate 4 provided with the same (ITO electrode 2) is placed on top of it.
The voltage non-linear element 5 was provided between the electrodes 1 and 2 by curing in the air at 80 to 4 oo''C for 30 minutes. is a ZnO fine powder, 7 is an MnO2 insulating coating applied to the surface of the ZnO fine powder 6, and 8 is an insulating binder that mechanically connects the ZnO fine powders 6. This binder 8 However, Zn
The O fine powders 60 are solidified together.
第３図はＩＴＯ電極１１Ｌ、１ｂが設けられたガラス基
板３１Ｌ上に電圧非直線性素子６を構成した場合を示し
ている。FIG. 3 shows a case where a voltage nonlinear element 6 is constructed on a glass substrate 31L on which ITO electrodes 11L and 1b are provided.
次に、上記のようにして作成された電圧非直線性素子の
電圧−電流特性について説明する。まず、第４図は第２
図の構成における電圧−電流特性を従来のＺｎＯバリス
タのそれと比較して示している。本発明の素子は、まず
酸化亜鉛をＴｏｏｏＣで焼成し、これにＭｎＯ２を０．
５ ｍｏ１％添加したものを９００°Ｃ１６０分間熱処
理した後、この平均粒子径５〜１０μｍのＺｎＯ微粉末
と結合剤とを等重量で混合したものにおいて、素子面積
を１−９電極間距離を３０μｍとした場合における特性
を示している。さて、電圧非直線性素子の電圧−電流特
性は、よく知られているように近似的に次式１式％
ここで、工は素子に流れる電流、■は素子の電極間の電
圧、Ｘは固有抵抗の抵抗値に相当する定数、αは上述し
た電圧非直線特性の指数を示しており、この電圧非直線
指数αは大きい程、電圧非直線性が優れていることにな
る。Next, the voltage-current characteristics of the voltage nonlinear element created as described above will be explained. First, Figure 4 shows the second
The voltage-current characteristics of the configuration shown in the figure are compared with those of a conventional ZnO varistor. In the device of the present invention, zinc oxide is first fired with ToooC, and then MnO2 is added to it at 0.5%.
5 mo1% was heat-treated at 900°C for 160 minutes, and in this mixture of ZnO fine powder with an average particle size of 5 to 10 μm and a binder in equal weights, the element area was adjusted to 1-9 and the distance between the electrodes was 30 μm. The characteristics are shown when Now, as is well known, the voltage-current characteristics of a voltage non-linear element can be approximated by the following formula (1) % where E is the current flowing through the element, ■ is the voltage between the electrodes of the element, and X is The constant α corresponding to the resistance value of the specific resistance indicates the above-mentioned index of the voltage nonlinearity characteristic, and the larger the voltage nonlinearity index α, the better the voltage nonlinearity.
第４図の特性に示されるように、特性Ｂで示される従来
のＺｎＯバリスタは低電流域において電圧非直線指数α
が小さく、１Ｏ−４Ａ以下の電流では良好な電圧非直線
性素子としての機能を発揮し得ない。一方、特性Ａで示
される本発明の素子では低電流域においても電圧非直線
指数αが大きく、１０−１０ ム程度の電流域でも十分
に電圧非直線性素子としての機能を発揮することができ
ることを示している。また、通常、ＺｎＯバリスタにお
いてはバリスタ特性を表わすのに、例えば素子に１ｍム
の電流を流し友時の電極間に現れる電圧をバリスタ電圧
Ｖ１ｍＡと呼び、このバリスタ電圧Ｖ＋ｍＡと上記電圧
非直線指数αとを使用している。本発明の素子では、上
述し念ように、低電流域においても電圧非直線指数αが
大きく、バリスタ電圧を第４図に示すように例えばｖ１
μＡで表わすことができる。As shown in the characteristics in Figure 4, the conventional ZnO varistor shown by characteristic B has a voltage nonlinearity index α in the low current region.
is small, and cannot function as a good voltage nonlinear element at a current of 10-4 A or less. On the other hand, in the device of the present invention shown by characteristic A, the voltage nonlinearity index α is large even in the low current range, and it can sufficiently function as a voltage nonlinear device even in the current range of about 10-10 μm. It shows. In addition, normally, in order to express the varistor characteristics of a ZnO varistor, for example, the voltage that appears between the electrodes when a current of 1 mm is passed through the element is called the varistor voltage V1mA, and this varistor voltage V+mA and the above voltage nonlinear index α and is used. As mentioned above, in the device of the present invention, the voltage non-linearity index α is large even in the low current range, and the varistor voltage is changed to v1, for example, as shown in FIG.
It can be expressed in μA.
このように本発明において、バリスタ電圧を低いものと
することができるのは、電極間距離を狭くして素子を形
成することができるためである。In this way, in the present invention, the varistor voltage can be made low because the element can be formed by narrowing the distance between the electrodes.
また、本発明素子において低電流域でも電圧非直線指数
αが大きい理由は、現在のところ理由は明確とはなって
いないが、微粉末状の半導体物質（ＺｎＯ）を絶縁性の
結合剤でもって固めたものであるため、それぞれの半導
体物質の間は点接触となり、接触面積が小さいこと、ま
た結合剤が絶縁性のため、漏れ電流が小さくなっている
ことによるものと考えられる。Furthermore, although the reason why the voltage nonlinearity index α is large even in the low current range in the device of the present invention is not clear at present, it is possible to This is thought to be due to the fact that since it is solidified, there is point contact between the respective semiconductor materials, so the contact area is small, and the bonding agent is insulating, so leakage current is small.
ここで、第４図の特性は上述しｔように電極間距離を３
０μｍとした素子についてのものであるが、これはＺｎ
Ｏ微粉末の平均粒子径が５〜１０μｍという比較的大き
な粒子径のためにこれ以上狭くすることができないから
である。すなわち、ＺｎＯ微粉末の平均粒子径が０．３
〜３μｍのものを使えば、電極間距離が１０μｍ程度も
しくはそれ以下の素子を作成することができるのであり
、その場合においても第４図に示すような良好な特性が
得られることを本発明者らは実験により確認した。Here, the characteristics shown in FIG. 4 are as described above when the distance between the electrodes is 3
This is for an element with a thickness of 0 μm;
This is because the average particle diameter of O fine powder is relatively large, 5 to 10 μm, and cannot be made any narrower. That is, the average particle diameter of the ZnO fine powder is 0.3
The inventor has found that if a material with a diameter of ~3 μm is used, it is possible to create an element with an interelectrode distance of approximately 10 μm or less, and even in that case, good characteristics as shown in FIG. 4 can be obtained. This was confirmed through experiments.
第６図は本発明において、酸化マンガンの添加量を変え
た場合のバリスタ電圧ｖ１μＡ１電圧非直線指数αおよ
び並列静電容量Ｃの変化する様子を示している。ここで
、酸化亜鉛の焼成温度など、その他の条件は第゛４図の
場合の条件と同一とした。FIG. 6 shows how the varistor voltage v1μA1 voltage nonlinear index α and parallel capacitance C change when the amount of manganese oxide added is changed in the present invention. Here, other conditions such as the firing temperature of zinc oxide were the same as those in the case of FIG. 4.
第６図に示されるように、本発明素子においては並列静
電容量が従来のＺｎＯバリスタが１ｏＯ０〜２００００
ＰＦであるのに対して非常に小さいものとなっている。As shown in FIG. 6, in the device of the present invention, the parallel capacitance is 1oO0 to 20,000 compared to that of the conventional ZnO varistor.
Although it is a PF, it is very small.
この並列静電容量が本発明素子において小さい理由は、
上述したように半導体物質間の接触面積が小さいことに
よるものである。The reason why this parallel capacitance is small in the device of the present invention is as follows.
This is due to the small contact area between semiconductor materials as described above.
なお、上記の実施例においては、半導体物質としては、
ＺｎＯｆ、例にとり説明したが、それ以外の半導体物質
であっても差支えないことはもちろんである。また、同
様に絶縁被膜を構成する材料としては、ＭｎＯ２単独に
限られることはなく、Ｍ ｎ Ｏ２を主成分として、ム
ｌ、τｉ、Ｓｒ、Ｍｇ。In addition, in the above embodiment, the semiconductor material is
Although ZnOf has been described as an example, it goes without saying that other semiconductor materials may be used. Similarly, the material constituting the insulating film is not limited to MnO2 alone, but may include MnO2 as a main component, Mul, τi, Sr, and Mg.
Ｎｉ、Ｏｒ、Ｓｉなどの金属酸化物まｔはこれら金属の
有機金属化合物を単独ｔｘは組合せて使用することがで
きるものである。Metal oxides such as Ni, Or, and Si or organometallic compounds of these metals can be used alone or in combination.
さらに、微粉末状の半導体物質を固める絶縁性の結合剤
としては、ポリイミド樹脂の他にも種々考えられること
はもちろんであり、熱硬化性樹脂。Furthermore, as the insulating binder for solidifying the fine powder semiconductor material, there are of course various other possible insulating binders other than polyimide resin, including thermosetting resin.
たとえばフェノール樹脂、フラン樹脂、エリア樹脂、メ
ラミン樹脂、不飽和ポリエステル樹脂、ジアリルフタレ
ート樹脂、エポキシ樹脂、ポリウレタン樹脂、ケイ素樹
脂などでも良いものである。For example, phenol resin, furan resin, area resin, melamine resin, unsaturated polyester resin, diallyl phthalate resin, epoxy resin, polyurethane resin, silicon resin, etc. may be used.
発明の効果
以上の説明より明らかなように本発明の電圧非直線性素
子は、低電流域における電圧非直線指数αが大きく、ま
比並列静電容量の小さな素子が得られることから、消費
電流の小さい液晶、ＥＬなどのデバイスのスイ・ンテン
グ素子として最適な素子を提供できるものである。また
、電極間距離を狭くして素子を形成することができるた
め、バリスタ電圧の低いものが得られ、上記電圧非直線
指数αが大きいことと相まって従来のＺｎＯバリスタで
は対応することのできなかった低電圧用ＩＣの保護素子
や低い電圧における電圧安定化素子として使用すること
ができる。さらに、結合剤で固めて素子形成を行う際に
高温プロセスを必要とすることなく簡単にして作ること
ができるため、回路基板上やガラス基板上に素子を直接
形成することができるものである。このように穏々の特
徴を有する本発明の電圧非直線性素子は、今までのＺｎ
Ｏバリスタなどでは考えられない幅広い用途が期待でき
るものであり、その産業性は犬なるものである。Effects of the Invention As is clear from the above explanation, the voltage nonlinear element of the present invention has a large voltage nonlinearity index α in the low current range, and an element with a small parallel capacitance can be obtained. This makes it possible to provide an element that is optimal as a switching element for devices such as small liquid crystals and EL devices. In addition, since the device can be formed with a narrow distance between the electrodes, a low varistor voltage can be obtained, which, combined with the large voltage nonlinearity index α mentioned above, cannot be achieved with conventional ZnO varistors. It can be used as a protection element for low voltage ICs or as a voltage stabilizing element at low voltages. Furthermore, since it can be easily manufactured without requiring a high-temperature process when forming an element by solidifying it with a binder, the element can be directly formed on a circuit board or a glass substrate. The voltage nonlinear element of the present invention, which has such moderate characteristics, is different from the conventional Zn
It can be expected to have a wide range of applications that cannot be imagined with O-varistors, and its industrial properties are outstanding.
第１図は本発明に係わる電圧非直線性素子の一実施例を
示す拡大断面図、第２図および第３図はそれぞれ本発明
の素子をガラス基板上に設けた実施例を示す断面図、第
４図は本発明素子と従来のＺｎＯバリスタの電圧−電流
時ａを示す図、第６図は本発明素子においてＭｎＯ２の
添加量を変えた場合の電圧非直線指数α、バリスタ電圧
ｖ１μ人および並列静電容量Ｃの変化する様子を示す図
である。
１ 、１ ＆ 、 １ ｂ 、 ２・−・・−ＩＴＯ電
極、３ 、３１Ｌ。
４・・・・・・ガラス基板、６・・・・・・電圧非直線
性素子、６・・・・・・ＺｎＯ微粉末、７・・・・・・
ＭｎＯ２絶縁被膜、８・・・・・・結合剤。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
第４図
一力 電圧（Ｖ）FIG. 1 is an enlarged sectional view showing an embodiment of a voltage nonlinear element according to the present invention, and FIGS. 2 and 3 are sectional views showing an embodiment in which the element of the present invention is provided on a glass substrate, respectively. FIG. 4 is a diagram showing the voltage-current time a of the device of the present invention and a conventional ZnO varistor, and FIG. 6 is a diagram showing the voltage nonlinear index α, the varistor voltage v1μ, and FIG. 3 is a diagram showing how the parallel capacitance C changes. 1, 1 &, 1b, 2...-ITO electrode, 3, 31L. 4...Glass substrate, 6...Voltage nonlinear element, 6...ZnO fine powder, 7...
MnO2 insulation coating, 8...Binder. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 4 Voltage (V)
Claims (1)
末状の半導体物質を絶縁性の結合剤で固め、電極を備え
てなることを特徴とする電圧非直線性素子。A voltage nonlinear element comprising an electrode formed by solidifying a fine powder semiconductor material with a thin insulating film mainly composed of MnO_2 with an insulating binder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61034643A JPS62190812A (en) | 1986-02-18 | 1986-02-18 | Voltage nonlinear device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61034643A JPS62190812A (en) | 1986-02-18 | 1986-02-18 | Voltage nonlinear device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62190812A true JPS62190812A (en) | 1987-08-21 |
Family
ID=12420114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61034643A Pending JPS62190812A (en) | 1986-02-18 | 1986-02-18 | Voltage nonlinear device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62190812A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5083790A (en) * | 1973-11-28 | 1975-07-07 | ||
| JPS5344899A (en) * | 1976-09-13 | 1978-04-22 | Gen Electric | Metal oxide varistor and method of manufacture thereof |
-
1986
- 1986-02-18 JP JP61034643A patent/JPS62190812A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5083790A (en) * | 1973-11-28 | 1975-07-07 | ||
| JPS5344899A (en) * | 1976-09-13 | 1978-04-22 | Gen Electric | Metal oxide varistor and method of manufacture thereof |
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