JPS62193207A - Voltage nonlinear device - Google Patents
Voltage nonlinear deviceInfo
- Publication number
- JPS62193207A JPS62193207A JP61035973A JP3597386A JPS62193207A JP S62193207 A JPS62193207 A JP S62193207A JP 61035973 A JP61035973 A JP 61035973A JP 3597386 A JP3597386 A JP 3597386A JP S62193207 A JPS62193207 A JP S62193207A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- zno
- fine powder
- voltage nonlinear
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 65
- 239000011787 zinc oxide Substances 0.000 description 32
- 239000000843 powder Substances 0.000 description 23
- 239000011230 binding agent Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910000428 cobalt oxide Inorganic materials 0.000 description 4
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910005224 Ga2O Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は印加電圧によって抵抗値が変化する電圧非直線
′准素子に関するもので、電圧安定化、異常電圧制御、
さらにはマＩ−ＩＪソックス動の液晶、ＥＬなどの表示
デバイスのスイッチング素子などに利用されるものであ
る。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a voltage nonlinear quasi-element whose resistance value changes depending on applied voltage, and is useful for voltage stabilization, abnormal voltage control,
Furthermore, it is used as a switching element for display devices such as I-IJ sock moving liquid crystals and EL devices.
従来の技術
従来の電圧非直線性素子は、酸化亜鉛（Ｚｎ０）に酸化
ビスマス（Ｂｉ２Ｏ，） 、酸化コバルト（ＣＯ□ｏ３
）、酸化マンガン（ＭｎＯ２）、酸化アンチモン（Ｓｂ
２０３）などの酸化物を添加して、１００゜〜１３５０
°Ｃで焼結しだＺｎＯバリスタなど、種々のものがある
。その中で、ＺｎＯバリスタは電圧非直線指数α、サー
ジ耐量が大きいことから、最も一般的に使われている（
特公昭４６−１９４７２号公報参照）。Conventional technology A conventional voltage nonlinear element is made of zinc oxide (Zn0), bismuth oxide (Bi2O, ), cobalt oxide (CO□o3
), manganese oxide (MnO2), antimony oxide (Sb
By adding oxides such as 203) to
There are various types such as ZnO varistors sintered at °C. Among them, ZnO varistors are the most commonly used because of their large voltage nonlinearity index α and surge resistance (
(See Japanese Patent Publication No. 46-19472).
発明が解決しようとする間頂点
このような従来の電圧非直線性素子は、ＺｎＯバリスタ
を初めとして、素子厚みを薄く（数十μｍ以下）するこ
とに限界があるため、バリスタ電圧（バリスタに電流１
ｍＡを流した時の電圧ｖ４ｍＡで表される）を低くする
ことに限界があり、低電圧用ＩＣの保護素子や低い電圧
における電圧安定化素子として使えないものであった。The peak of the problem that the invention is trying to solve In such conventional voltage nonlinear elements, such as ZnO varistors, there is a limit to reducing the element thickness (less than several tens of micrometers). 1
There is a limit to lowering the voltage (expressed as v4mA when mA is applied), and it cannot be used as a protection element for low voltage ICs or a voltage stabilizing element at low voltages.
また、上述したように１０００’Ｃ以上の高温プロセス
を必要とするだめ、ガラス基板上あるいは回路基板上に
電圧非直線性素子を直接形成できないという問題があっ
た。さらに、従来のものは並列静電容量が大きく、例え
ば液晶などのスイッチング素子としては不適当なもので
あるなどの間頂点を有していた。Further, as mentioned above, since a high temperature process of 1000'C or more is required, there is a problem that a voltage nonlinear element cannot be directly formed on a glass substrate or a circuit board. Furthermore, the conventional devices had a high parallel capacitance, making them unsuitable for use as switching elements for liquid crystals, for example.
問題点を解決するだめの手段
この問題点を解決するために本発明は、薄い絶縁被膜を
施した微粉末状の半導体物質を低融点ガラスで固め、電
極を備えてなるものである。Means for Solving the Problem In order to solve this problem, the present invention comprises a semiconductor material in the form of fine powder coated with a thin insulating film, solidified with low melting point glass, and provided with an electrode.
作用
この構成によれば、低電流域においても電圧非直線指数
αの大きなものが得られ、かつ電極間距離を狭く（数十
μｍ以下）して素子を形成することができ、低電圧化に
適した素子がきわめて容易に得られることとなる。また
、低徹点ガラスで固めて素子形成を行うために高温プロ
セスを必要とすることなく作ることができるため、回路
基板上に素子を直接形成することができ、ＺｎＯバリス
タなどでは考えられない幅広い用途が期待できるもので
ある。さらに、微粉末状の半導体物質を低融点ガラスで
固めたものであるため、それぞれの半導体物質の微粉末
間は点接触となり、接触面積が小さいことから並列静電
容量の小さなものが得られ、液晶などのデバイスのスイ
ッチング素子として最適な素子が提供できることとなる
。Effect: According to this configuration, a large voltage non-linearity index α can be obtained even in a low current range, and an element can be formed with a narrow distance between electrodes (several tens of μm or less), making it possible to reduce voltage. A suitable element can be obtained very easily. In addition, since it can be made without the need for high-temperature processes to form elements by solidifying them with low-temperature glass, it is possible to form elements directly on circuit boards, allowing for a wide range of applications unimaginable with ZnO varistors, etc. It has promising uses. Furthermore, since it is made by solidifying fine powder semiconductor material with low melting point glass, there is point contact between the fine powders of each semiconductor material, and since the contact area is small, a product with a small parallel capacitance can be obtained. This makes it possible to provide an element that is optimal as a switching element for devices such as liquid crystals.
実施例 以下、本発明を実施例にもとづいて詳細に説明する。Example Hereinafter, the present invention will be explained in detail based on examples.
まず、粒子径が０．０５〜１μｍの微粒子状の酸化亜鉛
を７００〜１３００’Ｃで焼成した後、その焼結された
ＺｎＯを０．５〜５０μｍの粒子径（平均粒子径１〜１
０μｍ）に粉砕し、そのＺｎＯ微粉末に酸化コバルトを
０．ｏ５〜１０ ｍｏ１％添加し、６０ｏ〜１３５ｏ０
Ｃで１０〜６ｏ分間、熱処理し、そのＺｎＯ微粉末表面
に酸化コバルトの絶縁被膜を形成した。ここで、微粉末
状のＺｎＯの表面にはＣｏ２Ｏ３絶縁被膜がほぼ数十〜
数百への厚さで薄く形成されていることが認められた。First, fine particulate zinc oxide with a particle size of 0.05 to 1 μm is fired at 700 to 1300°C, and then the sintered ZnO is heated to a particle size of 0.5 to 50 μm (average particle size of 1 to 1 μm).
Cobalt oxide is added to the ZnO fine powder to a size of 0.0 μm). o5~10 mo1% added, 60o~135o0
C for 10 to 6 minutes to form an insulating film of cobalt oxide on the surface of the ZnO fine powder. Here, on the surface of the fine powder ZnO, there are approximately several tens of Co2O3 insulating films.
It was observed that it was formed thinly, with a thickness of several hundred.
次いで、このようにして作成したＣｏ２Ｏ３絶縁被膜が
表面についたＺｎＯ微粉末群は弱い力で互いに接着して
いるので、これを乳鉢あるいはボットミルでほぐし、微
粉末状とした。Next, since the ZnO fine powder group with the Co2O3 insulating film formed on its surface adhered to each other with a weak force, it was loosened in a mortar or a bot mill to form a fine powder.
次に、上記のようにして得られたＣ Ｏ２０ｓ絶縁被膜
が表面に形成された微粉末状のＺｎＯに、微粉末間の結
合を図る絶縁性の結合剤として低融点ガラス粉末と有機
バインダーを添加し、混合した。Next, low melting point glass powder and an organic binder were added as an insulating binder to bond the fine powders to the finely powdered ZnO with the CO20s insulating film formed on the surface obtained as described above. and mixed.
ここで、結合剤としては低融点ガラス粉末分が微粉末状
のＺｎＯに対して６〜２０ｗｔ％となるようにしたもの
とし、それを有機バインダーと例えば等重量で混合し、
ペイント状とした。ここで、有機バインダーとしてはエ
チルセルロースを使用し、その固形分が溶剤（たとえば
ターピネオール）に対して１０ＷｔＸになるように薄め
たものとした。Here, as a binder, the low melting point glass powder is made to be 6 to 20 wt% with respect to fine powder ZnO, and it is mixed with the organic binder in an equal weight, for example,
It was made into a paint form. Here, ethyl cellulose was used as the organic binder, and its solid content was diluted to 10 WtX with respect to the solvent (eg, terpineol).
次いで、上記のようにして得られたペイントを第２図に
示すようにＩＴＯ（インジウム・スズ酸化物）電極１の
設けられたガラス基板３上に例えばスクリーン印刷で塗
布し、その上に同じ（ＩＴＯ電極２の設けられたガラス
基板４を載置し、３００〜ｓｓｏ’ｃで１０〜３０分間
、大気中で熱処理し、電極１，２間に電圧非直線性素子
５を設けた。Next, the paint obtained as described above is applied, for example, by screen printing, onto a glass substrate 3 provided with an ITO (indium tin oxide) electrode 1, as shown in FIG. A glass substrate 4 provided with an ITO electrode 2 was mounted and heat treated in the atmosphere at 300 to sso'c for 10 to 30 minutes, and a voltage nonlinear element 5 was provided between the electrodes 1 and 2.
第１図は、電圧非直線性素子５の拡大断面図であり、６
はＺｎＯ微粉末、７はＺｎＯ微粉末６の表面に施された
ＣＯ□Ｏ３絶縁被膜、８はそれらＺｎＯ微粉末６間を機
械的に結合している絶縁性結合剤の低層Ｉ点ガラスであ
り、この低融点ガラス８でもってＺｎＯ微粉末６０間は
互いに固められている。FIG. 1 is an enlarged sectional view of the voltage nonlinear element 5, and 6
is a ZnO fine powder, 7 is a CO□O3 insulating coating applied to the surface of the ZnO fine powder 6, and 8 is a low layer I point glass of an insulating binder that mechanically connects the ZnO fine powder 6. The ZnO fine powders 60 are solidified together by the low melting point glass 8.
第３図はＩＴＯ電極１＆、１ｂが設けられたガラス基板
３ａ上に電圧非直線性素子５を構成した場合を示してい
る。FIG. 3 shows a case where a voltage nonlinear element 5 is constructed on a glass substrate 3a provided with ITO electrodes 1&, 1b.
次に、上記のようにして作成された電圧非直線性素子の
電圧−電流特性について説明する。まず、第４図は第２
図の構成における電圧−電流特性を従来のＺｎＯバリス
タのそれと比較して示している。本発明の素子は、まず
酸化亜鉛を７００’Ｃで焼成し、これにＧａ２Ｏ，を０
．６ ｍｏ１％添加したものを９００℃、６０分間熱処
理した後、この平均粒子径６〜１０μｍのＺｎＯ微粉末
と奥野製楽■製の低融点ガラス微粉末（ＺｎＯ微粉末に
対して２０ｗｔ％）に上記有機バインダーを等重量で混
合したものにおいて、素子面積を１朋、電極間距離を３
０μｍとした場合における特性を示している。さて、電
圧非直線性素子の電圧−電流特性は、よく知られている
ように近似的に次式で示されている。Next, the voltage-current characteristics of the voltage nonlinear element created as described above will be explained. First, Figure 4 shows the second
The voltage-current characteristics of the configuration shown in the figure are compared with those of a conventional ZnO varistor. In the device of the present invention, zinc oxide is first fired at 700'C, and then Ga2O is added to it at zero temperature.
．． After heat-treating the ZnO fine powder with an average particle size of 6 to 10 μm and the low melting point glass fine powder manufactured by Okuno Seiraku ■ (20 wt% based on the ZnO fine powder), the ZnO fine powder with an average particle size of 6 to 10 μm was heat-treated at 900 ° C. for 60 minutes. In a mixture of equal weights of the above organic binders, the element area is 1 and the distance between electrodes is 3.
The characteristics are shown when the thickness is 0 μm. Now, as is well known, the voltage-current characteristics of a voltage nonlinear element are approximately expressed by the following equation.
工＝Ｋｖａ
ここで、■は素子に流れる電流、■は素子の電翫間の電
圧、Ｋは固有抵抗の抵抗値に相当する定数、αは上述し
た電圧非直線特性の指数を示しており、この１圧非直線
指数αは大きい程、電圧非直線性が優れていることにな
る。where ■ is the current flowing through the element, ■ is the voltage between the wires of the element, K is a constant corresponding to the resistance value of the specific resistance, and α is the exponent of the voltage nonlinear characteristic mentioned above, The larger the one-voltage nonlinearity index α is, the better the voltage nonlinearity is.
第４図の特性に示されるように、特性Ｂで示される従来
のＺｎＯバリスタは低電流域において電圧非直線指数α
が小さく、１σ４Å以下の電流では良好な電圧非直線性
素子としての機能を発揮し得ない。一方、特性ムで示さ
れる本発明の素子では低電流域においても電圧非直線指
数αが大きく、１ｏ−１０人程度の電流域でも十分に電
圧非直線性素子としての機能を発揮することができるこ
とを示している０また、通常 ７． ｎＯ／＜ ＩＪス
タにおいてはバリスタ特性を表わすのに、例えば素子に
１ｍムの電流を流した時の電極間に現れる電圧をバリス
タ電圧ｖ４．ｎＡと呼び、このバリスタ電圧ｖ＋ ｍｉ
と上記電圧非直線指数αとを使用している。本発明の素
子では、上述したように、低電流域においても電圧非直
線指数αが大きく、バリスタ電圧を第４図に示すように
例えばｖｌいで表わすことができる。As shown in the characteristics in Figure 4, the conventional ZnO varistor shown by characteristic B has a voltage nonlinearity index α in the low current region.
is small, and cannot function as a good voltage nonlinear element at a current of 1σ4 Å or less. On the other hand, in the device of the present invention shown by the characteristic curve, the voltage nonlinearity index α is large even in the low current range, and it can sufficiently function as a voltage nonlinear device even in the current range of about 1o-10 people. 0 is also normal 7. In order to express the varistor characteristics of nO/< IJ stars, for example, the voltage that appears between the electrodes when a current of 1 mm is passed through the element is expressed as the varistor voltage v4. nA, and this varistor voltage v+ mi
and the above-mentioned voltage non-linearity index α are used. As described above, in the device of the present invention, the voltage nonlinearity index α is large even in the low current range, and the varistor voltage can be expressed, for example, by vl as shown in FIG.
このように本発明において、バリスタ電圧を低いものと
することができるのは、電極間距離を狭くして素子を形
成することができるためである。In this way, in the present invention, the varistor voltage can be made low because the element can be formed by narrowing the distance between the electrodes.
また、本発明素子において低電流域でも電圧非直線指数
αが大きい理由は、現在のところ理由は明確とはなって
いないが、微粉末状の半導体物質（Ｚｎ０）を絶縁性結
合剤の低融点ガラスでもって固めたものであるため、そ
れぞれの半導体物質の間は点接触となり、接触面積が小
さいこと、また結合剤が絶縁性のため、漏れ電流が小さ
くなっていることによるものと考えられる。Furthermore, although the reason why the voltage nonlinearity index α is large even in the low current range in the device of the present invention is not clear at present, This is thought to be due to the fact that since it is solidified with glass, there is point contact between the respective semiconductor materials, and the contact area is small, and the leakage current is small because the bonding agent is insulating.
ここで、第４図の特性は上述したように電極間距離を３
０μｍとした素子についてのものであるが、これはＺｎ
Ｏ微粉末の平均粒子径が６〜１０μｍという比較的大き
な粒子径のためにこれ以上狭くすることができないから
である。Here, the characteristics shown in Fig. 4 are obtained by changing the distance between the electrodes to
This is for an element with a thickness of 0 μm, but this is a Zn
This is because the average particle size of the O fine powder is relatively large, 6 to 10 μm, and cannot be made any narrower.
すなわち、ＺｎＯ微粉末の平均粒子径が０．３〜３μｍ
のものを使えば、電極間距離が１０μｍ程度もしくはそ
れ以下の素子を作成することができるのであり、その場
合においても第４図に示すような良好な特性が得られる
ことを本発明者らは実験により確認した。That is, the average particle diameter of the ZnO fine powder is 0.3 to 3 μm.
The inventors have found that using this method, it is possible to create a device with an inter-electrode distance of about 10 μm or less, and even in that case, good characteristics as shown in Figure 4 can be obtained. Confirmed by experiment.
第６図は本発明において、酸化コバルトの添加量を変え
た場合のバリスタ電圧ｖ１□８、電圧非直線指数αおよ
び並列静電容ｉｃの変化する様子を示している。ここで
、酸化亜鉛の焼成温度など、その他の条件は第４図の場
合の条件と同一とした。FIG. 6 shows how the varistor voltage v1□8, the voltage nonlinearity index α, and the parallel capacitance ic change when the amount of cobalt oxide added is changed in the present invention. Here, other conditions such as the firing temperature of zinc oxide were the same as those in the case of FIG. 4.
第６図に示されるように、本発明素子においては並列静
電容量が従来のＺｎＯバリスタが１ｏｏＯ〜２００００
ＰＦであるのに対して非常に小さいものとなっている。As shown in FIG. 6, in the device of the present invention, the parallel capacitance of the conventional ZnO varistor is 1ooO~20000.
Although it is a PF, it is very small.
この並列静電容量が本発明素子において小さい理由は、
上述したように半導体物質間の接触面積が小さいことに
よるものである。The reason why this parallel capacitance is small in the device of the present invention is as follows.
This is due to the small contact area between semiconductor materials as described above.
なお、上記の実施例においては、半導体物質としては、
ＺｎＯを例にとり説明したが、それ以外の半導体物質で
あっても差支えないことはもちろんである。また、同様
に絶縁波膜を構成する材料としては、ＣＯ２Ｏ３に限ら
れることはなく、Ａｌ。In addition, in the above embodiment, the semiconductor material is
Although ZnO has been described as an example, it goes without saying that other semiconductor materials may be used. Similarly, the material constituting the insulating wave film is not limited to CO2O3, but may include Al.
Ｔｉ、 Ｓｒ、 Ｍｇ、 Ｎｉ、 Ｏｒ、 Ｓｉなどの
金属酸化物またはこれらの金属の有機金属化合物などで
もよいものであり、それらを単独または組合せて使用す
ることができるものである。Metal oxides such as Ti, Sr, Mg, Ni, Or, and Si, or organometallic compounds of these metals may be used, and these may be used alone or in combination.
発明の効果
以上の説明より明らかなように本発明の電圧非直線性素
子は、低電流域における電圧非直線指数αが大きく、ま
た並列静電容量の小さな素子が得られることから、消費
電流の小さい液晶、ＫＬなどのデバイスのスイッチング
素子として最適な素子を提供できるものである。また、
電極間距離を狭くして素子を形成することができるため
、バリスタ電圧の低いものが得られ、上記電圧非直線指
数αが大きいことと相まって従来の ＺｎＯバリスタで
は対応することのできなかった低電圧用工Ｃの保護素子
や低い電圧における電圧安定化素子として使用すること
ができる。さらに、低融点ガラスで固めて素子形成を行
うために高温プロセスを心安とすることなく簡単にして
作ることができるため、回路基板上やガラス基板上に素
子を直接形成することができるものである。このように
種々の特徴を有する本発明の電圧非直線性素子は、今ま
でのＺｎＯバリスタなどでは考えられない幅広い用途が
期待できるものであり、その産業性は大なるものである
。Effects of the Invention As is clear from the above explanation, the voltage nonlinear element of the present invention has a large voltage nonlinearity index α in the low current range, and an element with small parallel capacitance can be obtained, so that current consumption can be reduced. This makes it possible to provide an element that is optimal as a switching element for devices such as small liquid crystals and KLs. Also,
Since the device can be formed by narrowing the distance between the electrodes, it is possible to obtain a low varistor voltage, which, combined with the large voltage nonlinearity index α mentioned above, enables a low voltage that could not be supported by conventional ZnO varistors. It can be used as a protective element for industrial equipment C or a voltage stabilizing element at low voltages. Furthermore, because the device is formed by solidifying it with low-melting glass, it can be easily manufactured without having to worry about high-temperature processes, so the device can be formed directly on a circuit board or glass substrate. . The voltage nonlinear element of the present invention having such various characteristics can be expected to have a wide range of applications unimaginable for conventional ZnO varistors, and has great industrial potential.
第１図は本発明に係わる電圧非直線性素子の一実施例を
示す拡大断面図、第２図および第３図はそれぞれ本発明
の素子をガラス基板上に設けた実施例を示す断面図、第
４図は本発明素子と従来のＺｎＯバリスタ電圧−電流特
性を示す図、第５図は本発明素子においてＣＯ２０，の
添加量を変えた場合の電圧非直線指数α、バリスタ電圧
ｖＩｕ□および並列静電容量Ｃの変化する様子を示す図
である。
１．１ ａ 、 １ｂ 、２−−−−−−ＩＴＯ電極、
３．３＆。
４・・・・ガラス基板、６・・・・・・電圧非直線性素
子、８・・・・・・ＺｎＯ微粉末、７・・・・・・Ｃ０
２ｏ３ 絶縁被膜、８・・・・・・低融点ガラス。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
第３図
覧ミ殖埠・蒔好
号
第４図
一力 電圧０’）
第 ５ 図FIG. 1 is an enlarged sectional view showing an embodiment of a voltage nonlinear element according to the present invention, and FIGS. 2 and 3 are sectional views showing an embodiment in which the element of the present invention is provided on a glass substrate, respectively. Fig. 4 shows the voltage-current characteristics of the ZnO varistor of the device of the present invention and the conventional ZnO varistor, and Fig. 5 shows the voltage nonlinearity index α, the varistor voltage vIu□, and the parallel FIG. 3 is a diagram showing how the capacitance C changes. 1.1a, 1b, 2---ITO electrode,
3.3&. 4...Glass substrate, 6...Voltage nonlinear element, 8...ZnO fine powder, 7...C0
2o3 Insulating coating, 8...Low melting point glass. Name of agent: Patent attorney Toshio Nakao and 1 other person 1st
Fig. 2 Fig. 3 Illustrated list Mishukubu/Makogo Fig. 4 Voltage 0') Fig. 5
Claims (1)
ガラスで固め、電極を備えてなることを特徴とする電圧
非直線性素子。A voltage nonlinear element characterized by comprising a finely powdered semiconductor material coated with a thin insulating film, solidified with low melting point glass, and equipped with an electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61035973A JPS62193207A (en) | 1986-02-20 | 1986-02-20 | Voltage nonlinear device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61035973A JPS62193207A (en) | 1986-02-20 | 1986-02-20 | Voltage nonlinear device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62193207A true JPS62193207A (en) | 1987-08-25 |
Family
ID=12456856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61035973A Pending JPS62193207A (en) | 1986-02-20 | 1986-02-20 | Voltage nonlinear device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62193207A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01129724A (en) * | 1987-11-12 | 1989-05-23 | Nippon Denso Co Ltd | Charge controller for vehicle generator |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51100298A (en) * | 1975-02-28 | 1976-09-04 | Seikosha Kk | |
| JPS524096A (en) * | 1975-06-23 | 1977-01-12 | Gen Electric | Method of manufacturing thickkfilm varistor |
| JPS5344899A (en) * | 1976-09-13 | 1978-04-22 | Gen Electric | Metal oxide varistor and method of manufacture thereof |
-
1986
- 1986-02-20 JP JP61035973A patent/JPS62193207A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51100298A (en) * | 1975-02-28 | 1976-09-04 | Seikosha Kk | |
| JPS524096A (en) * | 1975-06-23 | 1977-01-12 | Gen Electric | Method of manufacturing thickkfilm varistor |
| JPS5344899A (en) * | 1976-09-13 | 1978-04-22 | Gen Electric | Metal oxide varistor and method of manufacture thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01129724A (en) * | 1987-11-12 | 1989-05-23 | Nippon Denso Co Ltd | Charge controller for vehicle generator |
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