JPS62190804A - Voltage nonlinear device - Google Patents
Voltage nonlinear deviceInfo
- Publication number
- JPS62190804A JPS62190804A JP61034635A JP3463586A JPS62190804A JP S62190804 A JPS62190804 A JP S62190804A JP 61034635 A JP61034635 A JP 61034635A JP 3463586 A JP3463586 A JP 3463586A JP S62190804 A JPS62190804 A JP S62190804A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- zno
- varistor
- powder
- voltage nonlinear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000843 powder Substances 0.000 claims description 27
- 239000011230 binding agent Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 2
- 239000011343 solid material Substances 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 65
- 239000011787 zinc oxide Substances 0.000 description 32
- 239000000463 material Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000011572 manganese Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
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- 239000011347 resin Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- -1 Diaryl phthalate Chemical compound 0.000 description 1
- 241000556720 Manga Species 0.000 description 1
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- 229920000877 Melamine resin Polymers 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007849 furan resin Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
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- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- 229920001187 thermosetting polymer Polymers 0.000 description 1
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Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は印加電圧によって抵抗値が変化する電圧非直線
性素子に関するもので、電圧安定化、異常電圧制御、さ
らにはマトリックス駆動の液晶、ＫＬなどの表示デバイ
スのスイッチング素子などに利用されるものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a voltage nonlinear element whose resistance value changes depending on an applied voltage, and is useful for voltage stabilization, abnormal voltage control, and matrix-driven liquid crystal, KL, etc. It is used in switching elements of display devices, etc.
従来の技術
従来の電圧非直線性素子は、酸化亜鉛（ＺｎＯ）に酸化
ビスマス（Ｂｉ２Ｏ３） 、酸化コバルト（Ｃｏ２０５
）、酸化マンガｙ（Ｍｎ０２）、酸化アンチモン（Ｓｂ
２０３）などの酸化物を添加して、１０００〜１３５０
’Ｃで燐結したＺｎＯバリスタなど、種々のものがある
。Conventional technology Conventional voltage nonlinear elements are made of zinc oxide (ZnO), bismuth oxide (Bi2O3), cobalt oxide (Co205), etc.
), manga oxide (Mn02), antimony oxide (Sb
1000-1350 by adding oxides such as 203)
There are various types such as ZnO varistors phosphorized with 'C.
その中で、ＺｎＯバリスタは電圧非直線指数α、サージ
耐量が大きいことから、最も一般的に使われている。（
特公昭４６−１９４７２号公報参照）発明が解決しよう
とする問題点
このような従来の電圧非直線性素子は、ＺｎＯバリスタ
を初めとして、素子厚みを薄く（数十μｍ以下）するこ
とに限界があるため、バリスタ電圧（バリスタに電流１
ｍ人を流した時の電圧”１ｍＡで表される）を低くする
ことに限界があり、低電圧用ＩＣの保護素子や低い電圧
における電圧安定化素子として使えないものであった。Among them, ZnO varistors are most commonly used because of their large voltage nonlinearity index α and surge resistance. (
(Refer to Japanese Patent Publication No. 46-19472) Problems to be Solved by the Invention In such conventional voltage nonlinear elements, including ZnO varistors, there is a limit to how thin the element can be (less than several tens of μm). Therefore, the varistor voltage (current 1 to the varistor
There is a limit to lowering the voltage (expressed as 1 mA) when m currents are applied, and it cannot be used as a protection element for low voltage ICs or as a voltage stabilizing element at low voltages.
また、上述したように１０００’ｌ：以上の高温プロセ
スを必要とするため、ガラス基板上あるいは回路基板上
に電圧非直線性素子を直接形成できないという問題があ
った。さらに、従来のものは並列静電容量が大きく、例
えば液晶などのスイッチング素子としては不適当なもの
であるなどの問題点を有していた０
問題点を解決するだめの手段
この問題点を解決するために本発明は、Ｍｎ ０２を主
成分とする薄い絶縁被膜を有した微粉末状の半導体物質
が複数個集まった状態を一つの粉末とし、その粉末間も
しくは一部に上記微粉末を含む粉末間を絶縁性の結合剤
で固め、電極を備えてなるものである。Further, as mentioned above, since a high temperature process of 1000'L or more is required, there is a problem that a voltage nonlinear element cannot be directly formed on a glass substrate or a circuit board. Furthermore, the conventional type had a large parallel capacitance, making it unsuitable for switching devices such as liquid crystals. In order to achieve this, the present invention uses a state in which a plurality of finely powdered semiconductor substances having a thin insulating film mainly composed of Mn 02 are gathered together as one powder, and the above-mentioned fine powder is contained between or in part of the powders. The powder is bonded with an insulating binder and is equipped with an electrode.
作用
この構成によれば、低電流域においても電圧非直線指数
αの大きなものが得られ、かつ電極間距離を狭く（数十
μｍ以下）して素子を形成することができ、低電圧化に
適した素子がきわめて容易に得られることとなる。また
、結合剤で固めて素子形成を行う際に高温プロセスを必
要とすることなく作ることができるため、回路基板上に
素子を直接形成することができ、 ＺｎＯバリスタなど
では考えられない幅広い用途が期待できるものである。Effect: According to this configuration, a large voltage non-linearity index α can be obtained even in a low current range, and an element can be formed with a narrow distance between electrodes (several tens of μm or less), making it possible to reduce voltage. A suitable element can be obtained very easily. In addition, since it can be made without requiring high-temperature processes when solidifying it with a binder and forming elements, it is possible to form elements directly on circuit boards, allowing for a wide range of applications unimaginable with ZnO varistors and the like. This is something to look forward to.
さらに、粉末状の半導体物質を絶縁性の結合剤でもって
固めたものであるため、それぞれの半導体物質の粉末間
は点接触となり、接触面積が小さいことから並列静電容
量の小さなものが得られ、液晶などのデバイスのスイッ
チング素子として最適な素子が提供できることとなる。Furthermore, since it is a powdered semiconductor material hardened with an insulating binder, there is point contact between the powders of each semiconductor material, and the contact area is small, resulting in a small parallel capacitance. , it is possible to provide an element that is optimal as a switching element for devices such as liquid crystals.
実施例 以下、本発明を実施例にもとづいて詳細に説明する。Example Hereinafter, the present invention will be explained in detail based on examples.
まず、粒子径が０．０６〜１μｍの微粒子状の酸化亜鉛
を７００〜１３００’Ｃで燐酸した後、その燐結された
ＺｎＯを０６５〜５０μｍの粒子径（平均粒子径１〜１
０μｍ）に粉砕し、そのＺｎＯ微粉末に酸化マンガンを
０．０５〜１０ ｍｏ１％添加し、６００〜１３６０℃
で１０〜６０分間、熱処理し、そのＺｎＯ微粉末表面に
酸化マンガンの絶縁被膜を形成した。ここで、微粉末状
のＺｎＯの表面にはＭｎ ０２絶縁被膜がほぼ数十〜数
百への厚さで薄く形成されていることが認められた。次
いで、こめようにして作成しだＭｎ ０２絶縁被膜が表
面についたＺｎＯ微粉末はそれぞれが弱い力で互いに接
着しているので、これを乳鉢あるいはボッ２ルでほぐし
、上記ＺｎＯ微粉末がそれぞれ複数個集まった微粉末群
の状態とした（以下、この状態のものを粉末状という）
。この時、一部に上記ＺｎＯ微粉末が単独で存在しても
差支えないものであり、このようなＺｎＯ微粉末を一部
に含んでの状態のものも粉末状という。次に、上記のよ
うにして得られたＭｎ ０２絶縁被膜が表面に形成され
た粉末状のＺｎＯに、粉末間の結合を図る絶縁性の結合
剤（バインダー）としてポリイミド樹脂を添加し、混合
した。First, fine particulate zinc oxide with a particle size of 0.06 to 1 μm is phosphoricated at 700 to 1300°C, and then the phosphorized ZnO is phosphoricated with a particle size of 0.065 to 50 μm (average particle size of 1 to 1 μm).
0 μm), add 0.05 to 10 mo1% of manganese oxide to the ZnO fine powder, and heat at 600 to 1360°C.
A heat treatment was performed for 10 to 60 minutes to form an insulating film of manganese oxide on the surface of the ZnO fine powder. Here, it was observed that a thin Mn 02 insulating film was formed on the surface of the finely powdered ZnO with a thickness of approximately several tens to several hundreds. Next, the fine ZnO powders with the Mn02 insulating coating on their surfaces, which were created in a similar manner, adhered to each other with weak force, so they were loosened in a mortar or bottle, and each of the fine ZnO powders was separated into multiple pieces. It is in the state of a group of fine powders (hereinafter, this state is referred to as powder)
. At this time, there is no problem even if the ZnO fine powder is present alone in a part, and a state containing such ZnO fine powder in a part is also referred to as powder. Next, a polyimide resin was added as an insulating binder to bond the powders to the powdered ZnO on which the Mn 02 insulating film obtained as described above was formed, and the mixture was mixed. .
ここで、結合剤としてはポリイミド樹脂の固形分が溶剤
（例えばｎ−メチル−２−ピロリドン）に対して５Ｗｔ
Ｊとなるように薄めたものとし、それをＺｎＯ粉末と例
えば等重量で混合し、ペイント状とした。次いで、上記
のようにして得られたペイントを第２図に示すようにＩ
ＴＯ（インジウム・スズ酸化物）電極１の設けられたガ
ラス基板３上に例えばスクリーン印刷で塗布し、その上
に同じ（ＩＴＯ電極２の設けられたガラス基板４を載置
し、２８０〜４００℃で３０分間、大気中で硬化させ、
電極１，２間に電圧非直線性素子５を設けた。第１図は
、電圧非直線性素子５の拡大断面図であり、６はＺｎＯ
粉末、７はＺｎＯ粉末６の表面に施されたＭｎ ０２絶
縁被膜、８はそれらＺｎＯ粉末６間を機械的に結合して
いる絶縁性の結合剤であり、この結合剤８でもってＺｎ
Ｏ粉末６０間は互いに固められている。第３図はＩＴＯ
電極１Ｎ、１ｂが設けられたガラス基板３２Ｌ上に電圧
非直線性素子５を構成した場合を示している。Here, as a binder, the solid content of the polyimide resin is 5 Wt with respect to the solvent (for example, n-methyl-2-pyrrolidone).
It was diluted to give a paint-like composition, and mixed with ZnO powder in an equal weight, for example, to form a paint. Next, the paint obtained as described above was treated with I as shown in FIG.
It is coated on a glass substrate 3 provided with an TO (indium tin oxide) electrode 1 by, for example, screen printing, and a glass substrate 4 provided with the same (ITO electrode 2) is placed on top of it, and heated at 280 to 400°C. cure in air for 30 minutes,
A voltage nonlinear element 5 was provided between the electrodes 1 and 2. FIG. 1 is an enlarged cross-sectional view of the voltage nonlinear element 5, and 6 is a ZnO
7 is a Mn 02 insulating coating applied to the surface of the ZnO powder 6; 8 is an insulating binder that mechanically connects the ZnO powders 6;
The O powders 60 are solidified together. Figure 3 shows ITO
A case is shown in which a voltage nonlinear element 5 is configured on a glass substrate 32L on which electrodes 1N and 1b are provided.
次に、上記のようにして作成された電圧非直線性素子の
電圧−電流特性について説明する。まず、第４図は第２
図の構成における電圧−電流特性を従来のＺｎＯバリス
タのそれと比較して示している。Next, the voltage-current characteristics of the voltage nonlinear element created as described above will be explained. First, Figure 4 shows the second
The voltage-current characteristics of the configuration shown in the figure are compared with those of a conventional ZnO varistor.
本発明の素子は、まず酸化亜鉛を７００’Ｃで焼成し、
これにＭｎ ０２をｏ、ｓｍｏ１％添加したものを９０
０’ｌ：、６０分間熱処理した後、この平均粒子径５〜
１０μｍのＺｎＯ粉末と結合剤とを等重量で混合したも
のにおいて、素子面積を１−９電極間距離を３０μｍと
した場合における特性を示している。さて、電圧非直線
性素子の電圧−電流特性は、よく知られているように近
似的に次式で示されている。The element of the present invention is produced by first firing zinc oxide at 700'C,
To this, 90% of Mn02 and 1% smo were added.
0'l: After heat treatment for 60 minutes, this average particle size is 5~
The graph shows the characteristics when the element area is 1-9 and the distance between the electrodes is 30 μm in a mixture of 10 μm ZnO powder and binder in equal weights. Now, as is well known, the voltage-current characteristics of a voltage nonlinear element are approximately expressed by the following equation.
エ＝ ＫＶ″
ここで、工は素子に流れる電流、Ｖは素子の電極間の電
圧、Ｋは固有抵抗の抵抗値に相当する定数、αは上述し
た電圧非直線特性の指数を示しており、この電圧非直線
指数αは大きい程、電圧非直線性が優れていることにな
る。E = KV'' Here, E is the current flowing through the element, V is the voltage between the electrodes of the element, K is a constant corresponding to the resistance value of the specific resistance, and α is the exponent of the voltage nonlinear characteristic mentioned above. The larger the voltage nonlinearity index α, the better the voltage nonlinearity.
第４図の特性に示されるように、特性Ｂで示される従来
のＺｎＯバリスタは低電流域において電圧非直線指数α
が小さく、１０ Ａ以下の電流では良好な電圧非直線性
素子としての機能を発揮し得ない。一方、特性人で示さ
れる本発明の素子では低電流域においても電圧非直線指
数αが大きく、１０ 人程度の電流域でも十分に電圧非
直線性素子としての機能を発揮することができることを
示している。また、通常、ＺｎＯバリスタにおいてはバ
リスタ特性を表わすのに、例えば素子に１ｍ人の電流を
流した時の電極間に現れる電圧をバリスタ電圧”１ｍ人
と呼び、このバリスタ電圧ｖ１ｍムと上記電圧非直線指
数αとを使用している。本発明の素子では、上述したよ
うに、低電流域においても電圧非直線指数αが大きく、
バリスタ電圧を第４図に示すように例えばＶｌｐｈで表
わすことができる。As shown in the characteristics in Figure 4, the conventional ZnO varistor shown by characteristic B has a voltage nonlinearity index α in the low current region.
is small, and cannot function as a good voltage nonlinear element at a current of 10 A or less. On the other hand, the voltage nonlinearity index α of the device of the present invention, which is indicated by the characteristic value, is large even in the low current range, indicating that it can sufficiently function as a voltage nonlinear device even in the current range of about 10 people. ing. In addition, normally, in order to express the varistor characteristics of a ZnO varistor, for example, the voltage that appears between the electrodes when a current of 1m is passed through the element is called the varistor voltage "1m", and this varistor voltage v1m and the above voltage As mentioned above, in the device of the present invention, the voltage non-linearity index α is large even in the low current range, and
The varistor voltage can be expressed, for example, as Vlph, as shown in FIG.
このように本発明において、バリスタ電圧を低いものと
することができるのは、電極間距離を狭くして素子を形
成することができるだめである。Thus, in the present invention, the varistor voltage can be made low because the element can be formed by narrowing the distance between the electrodes.
まだ、本発明素子において低電流域でも電圧非直線指数
αが大きい理由は、現在のところ理由は明確とはなって
いないが、粉末状の半導体物質（ＺｎＯ）を絶縁性の結
合剤でもって固めたものであるだめ、それぞれの半導体
物質の間は点接触となり、接触面積が小さいこと、また
結合剤が絶縁性のだめ、漏れ電流が小さくなっているこ
とによるものと考えられる。The reason why the voltage nonlinearity index α is large even in the low current range in the device of the present invention is currently not clear, but This is thought to be due to the fact that there is point contact between the respective semiconductor materials, and the contact area is small, and the bonding agent is insulating, so the leakage current is small.
ここで、第４図の特性は上述したように電極間距離を３
０μｍとした素子についてのものであるが、これはＺｎ
Ｏ粉末の平均粒径が５〜１０μｍという比較的大きな粒
子径のためにこれ以上狭くすることができないからであ
る。すなわち、ＺｎＯ粉末の平均粒子径がＯｊ〜３μｍ
のものを使えば、電極間距離が１０μｍ程度、もしくは
それ以下の素子を作成することができるのであり、その
場合においても第４図に示すような良好な特性が得られ
ることを本発明者らは実験により確認した。Here, the characteristics shown in Fig. 4 are as follows when the distance between the electrodes is 3
This is for an element with a thickness of 0 μm;
This is because the average particle size of the O powder is relatively large, 5 to 10 μm, and cannot be made any narrower. That is, the average particle diameter of the ZnO powder is Oj ~ 3 μm
The inventors have found that using this method, it is possible to create an element with an interelectrode distance of about 10 μm or less, and that even in that case, good characteristics as shown in Figure 4 can be obtained. was confirmed by experiment.
第５図は本発明において、酸化マンガンの添加量を変え
た場合のバリスタ電圧ｖ１１．１ム、電圧非直線指数α
および並列静電容量Ｃの変化する様子を示している。こ
こで、酸化亜鉛の焼成温度など、その他の条件は第４図
の場合の条件と同一としだ。Figure 5 shows the varistor voltage v11.1 mm and the voltage non-linearity index α when the amount of manganese oxide added is changed in the present invention.
It also shows how the parallel capacitance C changes. Here, other conditions such as the firing temperature of zinc oxide were the same as those in the case of FIG. 4.
第５図に示されるように、本発明素子においては並列静
電容量が従来のＺｎＯバリスタが１ｏｏＯ〜２００００
ＰＦであるのに対して非常に小さいものとなっている。As shown in FIG. 5, in the device of the present invention, the parallel capacitance of the conventional ZnO varistor is 1ooO~20000.
Although it is a PF, it is very small.
この並列静電容量が本発明素子において小さい理由は、
上述したように半導体物質間の接触面積が小さいことに
よるものである。The reason why this parallel capacitance is small in the device of the present invention is as follows.
This is due to the small contact area between semiconductor materials as described above.
なお、上記の実施例においては、半導体物質としては、
ＺｎＯを例にとり説明したが、それ以外の半導体物質で
あっても差支えないことはもちろんである。また、同様
に絶縁被膜を構成する材料としては、Ｍｎ ０２単独に
限られることはな（、ＭｎＯ２ヲ主成分として、Ａｄ、
Ｔｉ、Ｓｒ、Ｍｇ、Ｎｉ、Ｏｒ、Ｓｉなどの金属酸化物
まだはこれら金属の有機金属化合物を単独または組合せ
て使用することができるものである。In addition, in the above embodiment, the semiconductor material is
Although ZnO has been described as an example, it goes without saying that other semiconductor materials may be used. Similarly, the material constituting the insulating film is not limited to MnO2 alone (MnO2 as a main component may include Ad,
Metal oxides such as Ti, Sr, Mg, Ni, Or, Si, and organometallic compounds of these metals can be used alone or in combination.
さらに、粉末状の半導体物質を固める絶縁性の結合剤と
しては、ポリイミド樹脂の他にも種々考えられることは
もちろんであり、熱硬化性樹脂、たとえば、フェノール
樹脂、フラン樹脂、ユリア樹脂、メラミン樹脂、不飽和
ポリエステル樹脂。In addition to polyimide resin, various other insulating binders for solidifying powdered semiconductor materials can of course be used, including thermosetting resins such as phenol resin, furan resin, urea resin, and melamine resin. , unsaturated polyester resin.
ジアリルフタレート樹脂、エポキシ樹脂、ポリウレタン
樹脂、ケイ素樹脂などでも良いものである。Diaryl phthalate resin, epoxy resin, polyurethane resin, silicone resin, etc. may also be used.
発明の効果
以上の説明より明らかなように本発明の電圧非直線性素
子は、低電流域における電圧非直線指数αが大きく、ま
た並列静電容量の小さな素子が得られることから、消費
電流の小さい液晶、ＫＬなどのデバイスのスイッチング
素子として最適な素子を提供できるものである。また、
電極間距離を狭くして素子を形成することができるだめ
、バリスタ電圧の低いものが得られ、上記電圧非直線指
数αが大きいことと相まって従来のＺｎＯバリスタでは
対応することのできなかった低電圧用ＩＣの保護素子や
低い電圧における電圧安定化素子として使用することが
できる。さらに、結合剤で固めて素子形成を行う際に高
温プロセスを必要とすることなく簡単にして作ることが
できるだめ、回路基板上やガラス基板上に素子を直接形
成することができるものである。このように種々の特徴
を有する本発明の電圧非直線性素子は、今までのＺｎＯ
バリスタなどでは考えられない幅広い用途が期待できる
ものであり、その産業性は大なるものである０Effects of the Invention As is clear from the above explanation, the voltage nonlinear element of the present invention has a large voltage nonlinearity index α in the low current range, and an element with small parallel capacitance can be obtained, so that current consumption can be reduced. This makes it possible to provide an element that is optimal as a switching element for devices such as small liquid crystals and KLs. Also,
Since the device can be formed by narrowing the distance between the electrodes, a low varistor voltage can be obtained, and combined with the large voltage nonlinearity index α mentioned above, it is possible to achieve a low voltage that could not be supported by conventional ZnO varistors. It can be used as a protection element for commercial ICs or as a voltage stabilizing element at low voltages. Furthermore, since it can be easily manufactured without requiring a high-temperature process when forming an element by solidifying it with a binder, the element can be directly formed on a circuit board or a glass substrate. The voltage nonlinear element of the present invention having various features as described above is different from the conventional ZnO
It can be expected to have a wide range of applications that cannot be imagined with baristas, etc., and its industrial potential is great.
第１図は本発明に係わる電圧非直線性素子の一実施例を
示す拡大断面図、第２図および第３図はそれぞれ本発明
の素子をガラス基板上に設けた実施例を示す断面図、第
４図は本発明素子と従来のＺｎＯバリスタの電圧−電流
特性を示す図、第５図は本発明素子においてＭｎ ０２
の添加量を変えた場合の電圧非直線指数α、バリスタ電
圧ｖ１ｐＡおよび並列静電容量Ｃの変化する様子を示す
図である。
１ 、１ ＆ 、 １ ｂ 、２・−・・・−ＩＴＯ電
極、３．３Ｊ４・・・・・・ガラス基板、５・・・・・
・電圧非直線性素子、６・・・・・・ＺｎＯ粉末、７・
・・・・・Ｍｎ ０２絶縁被膜、８・川・・結合剤。
代理人の氏名 弁理士 中 尾 敏 男 はが１名ａ）
−派
第４図
一力 電圧（ｖ）
第５因FIG. 1 is an enlarged sectional view showing an embodiment of a voltage nonlinear element according to the present invention, and FIGS. 2 and 3 are sectional views showing an embodiment in which the element of the present invention is provided on a glass substrate, respectively. FIG. 4 is a diagram showing the voltage-current characteristics of the device of the present invention and a conventional ZnO varistor, and FIG. 5 is a diagram showing the voltage-current characteristics of the device of the present invention and a conventional ZnO varistor.
FIG. 3 is a diagram showing how the voltage non-linearity index α, the varistor voltage v1pA, and the parallel capacitance C change when the amount of addition of is changed. 1, 1 &, 1 b, 2...-ITO electrode, 3.3J4...Glass substrate, 5...
・Voltage nonlinear element, 6...ZnO powder, 7.
...Mn 02 insulation coating, 8. River... binder. Name of agent Patent attorney Toshio Nakao Haga 1 person a) − Group 4 Ichiriki Voltage (v) 5th factor
Claims (1)
末状の半導体物質が複数個集まった状態を一つの粉末と
し、その粉末間もしくは一部に上記微粉末を含む粉末間
を絶縁性の結合剤で固め、電極を備えてなることを特徴
とする電圧非直線性素子。A state in which a plurality of finely powdered semiconductor substances with a thin insulating film mainly composed of MnO_2 are assembled into one powder, and an insulating binder is used between the powders or between the powders that partially contain the fine powder. 1. A voltage nonlinear element, characterized in that it is hardened with a solid material and includes an electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61034635A JPS62190804A (en) | 1986-02-18 | 1986-02-18 | Voltage nonlinear device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61034635A JPS62190804A (en) | 1986-02-18 | 1986-02-18 | Voltage nonlinear device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62190804A true JPS62190804A (en) | 1987-08-21 |
Family
ID=12419863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61034635A Pending JPS62190804A (en) | 1986-02-18 | 1986-02-18 | Voltage nonlinear device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62190804A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5083790A (en) * | 1973-11-28 | 1975-07-07 | ||
| JPS5344899A (en) * | 1976-09-13 | 1978-04-22 | Gen Electric | Metal oxide varistor and method of manufacture thereof |
-
1986
- 1986-02-18 JP JP61034635A patent/JPS62190804A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5083790A (en) * | 1973-11-28 | 1975-07-07 | ||
| JPS5344899A (en) * | 1976-09-13 | 1978-04-22 | Gen Electric | Metal oxide varistor and method of manufacture thereof |
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