JPS5718324A - Method of working - Google Patents

Method of working

Info

Publication number
JPS5718324A
JPS5718324A JP9347380A JP9347380A JPS5718324A JP S5718324 A JPS5718324 A JP S5718324A JP 9347380 A JP9347380 A JP 9347380A JP 9347380 A JP9347380 A JP 9347380A JP S5718324 A JPS5718324 A JP S5718324A
Authority
JP
Japan
Prior art keywords
molybdenum
ion beam
working
reaction
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9347380A
Other languages
Japanese (ja)
Inventor
Kyusaku Nishioka
Hiroji Harada
Yoshikazu Obayashi
Yoji Masuko
Isao Shibayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9347380A priority Critical patent/JPS5718324A/en
Publication of JPS5718324A publication Critical patent/JPS5718324A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To accomplish fine working without use of a photoresist or an electronic resist by sublimating or evaporating material through a reaction of the material and ion with irradiaton of an accelerated ion beam on a substrate. CONSTITUTION:An oxygen ion beam 4 with an accelerated voltage of 10-30kV is irradiated on a part to be etched away of a molybdenum thin film 3 formed on a subtrate 1 and a molybdenum oxide is formed through a reaction of oxygen ion and molybdenum. The molybdenum oxide thus formed is sublimated away due to a high local temperature caused by the ion beam 4. The use of such beam can improve the accuracy of the working eliminating resists.
JP9347380A 1980-07-07 1980-07-07 Method of working Pending JPS5718324A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9347380A JPS5718324A (en) 1980-07-07 1980-07-07 Method of working

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9347380A JPS5718324A (en) 1980-07-07 1980-07-07 Method of working

Publications (1)

Publication Number Publication Date
JPS5718324A true JPS5718324A (en) 1982-01-30

Family

ID=14083304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9347380A Pending JPS5718324A (en) 1980-07-07 1980-07-07 Method of working

Country Status (1)

Country Link
JP (1) JPS5718324A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6454650A (en) * 1987-08-26 1989-03-02 Canon Kk Electron emission element
JPS6454649A (en) * 1987-08-26 1989-03-02 Canon Kk Electron emission element
JPH0553293A (en) * 1991-08-26 1993-03-05 Mitsubishi Electric Corp Manufacture of photomask substrate
KR100684702B1 (en) * 2003-08-08 2007-02-20 세이코 엡슨 가부시키가이샤 Method of forming bank and method of forming wiring pattern, electrooptical device and electronic apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185680A (en) * 1974-12-13 1976-07-27 Thomson Csf
JPS5680131A (en) * 1979-12-05 1981-07-01 Nec Corp Method and device for ion beam etching

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185680A (en) * 1974-12-13 1976-07-27 Thomson Csf
JPS5680131A (en) * 1979-12-05 1981-07-01 Nec Corp Method and device for ion beam etching

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6454650A (en) * 1987-08-26 1989-03-02 Canon Kk Electron emission element
JPS6454649A (en) * 1987-08-26 1989-03-02 Canon Kk Electron emission element
JPH0553293A (en) * 1991-08-26 1993-03-05 Mitsubishi Electric Corp Manufacture of photomask substrate
KR100684702B1 (en) * 2003-08-08 2007-02-20 세이코 엡슨 가부시키가이샤 Method of forming bank and method of forming wiring pattern, electrooptical device and electronic apparatus

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