JPS5612736A - Formation of fine chromium pattern - Google Patents

Formation of fine chromium pattern

Info

Publication number
JPS5612736A
JPS5612736A JP8717679A JP8717679A JPS5612736A JP S5612736 A JPS5612736 A JP S5612736A JP 8717679 A JP8717679 A JP 8717679A JP 8717679 A JP8717679 A JP 8717679A JP S5612736 A JPS5612736 A JP S5612736A
Authority
JP
Japan
Prior art keywords
chromium
film
etching
formation
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8717679A
Other languages
Japanese (ja)
Inventor
Masaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP8717679A priority Critical patent/JPS5612736A/en
Publication of JPS5612736A publication Critical patent/JPS5612736A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Abstract

PURPOSE:To obtain a fine pattern by a process which comprises formation of the chromium film, the chromium oxide film and the resist pattern on the substrate, etching to expose the surface of the chromium on which the etching resistant film is formed and side etching the bottom of the resist. CONSTITUTION:The metal chromium film 2 with a thickness of 500Angstrom and the chromium oxide film 3 with a thickness of 200Angstrom are applied on the glass substrate 1 by sputtering evaporation. Then, a positive photoresist film is applied and then, eithography is given by ultraviolet rays to form a resist pattern 5. Subsequently, the chromium oxide 3 is selectively etched by plasma etching to form a removed section 6, while the etching resistant film 7 is formed on the surface of the metal chromium film 2. Then, the chromium oxide 3 exposed to the side wall of the removed section 6 undergoes a side etching and further the chromium thereunder an etching. This allows the formation of a fine etched chromium pattern less than 0.5mum with the normal ultraviolet rays exposure.
JP8717679A 1979-07-10 1979-07-10 Formation of fine chromium pattern Pending JPS5612736A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8717679A JPS5612736A (en) 1979-07-10 1979-07-10 Formation of fine chromium pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8717679A JPS5612736A (en) 1979-07-10 1979-07-10 Formation of fine chromium pattern

Publications (1)

Publication Number Publication Date
JPS5612736A true JPS5612736A (en) 1981-02-07

Family

ID=13907672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8717679A Pending JPS5612736A (en) 1979-07-10 1979-07-10 Formation of fine chromium pattern

Country Status (1)

Country Link
JP (1) JPS5612736A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097404U (en) * 1983-12-08 1985-07-03 善家　重忠 cylinder device
JPS6166235U (en) * 1984-10-08 1986-05-07

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097404U (en) * 1983-12-08 1985-07-03 善家　重忠 cylinder device
JPS6166235U (en) * 1984-10-08 1986-05-07

Similar Documents

Publication Publication Date Title
JPS5764739A (en) Photomask substrate and photomask
JPS5612736A (en) Formation of fine chromium pattern
JPS57183037A (en) Formation of pattern
JPS5461478A (en) Chromium plate
JPS55163539A (en) Photo mask
JPS5637629A (en) Formation of thin film pattern
KR970011645B1 (en) Phase shift mask fabrication
JPS5743425A (en) Forming method for fine pattern
JPS5699342A (en) Manufacture of photomask
JPS57135950A (en) Preparation of photomask
JPS56130751A (en) Manufacture of mask
JPS5452473A (en) Forming method for coating for fine pattern
JPS56158334A (en) Manufacture of hard mask
JPS56156982A (en) Production of overlay for planar type magnetic bubble element
JPS5674251A (en) Photomask
JPS5618429A (en) Minute electrode formation
JPS55151336A (en) Forming method of fine pattern
JPS5635774A (en) Dry etching method
JPS5640828A (en) Production of photomask
JPS5778026A (en) Production of optical display panel
JPS54162460A (en) Electrode forming method
JPS5732634A (en) Production of pattern with fine gap
JPS5735860A (en) Preparation of photomask
JPS6462491A (en) Formation of metallic pattern
JPS5893052A (en) Photomask