JPS57186335A - Forming method for pattern - Google Patents

Forming method for pattern

Info

Publication number
JPS57186335A
JPS57186335A JP7007881A JP7007881A JPS57186335A JP S57186335 A JPS57186335 A JP S57186335A JP 7007881 A JP7007881 A JP 7007881A JP 7007881 A JP7007881 A JP 7007881A JP S57186335 A JPS57186335 A JP S57186335A
Authority
JP
Japan
Prior art keywords
film
gas
mask
plasma
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7007881A
Other languages
Japanese (ja)
Other versions
JPH0143453B2 (en
Inventor
Hideo Ikitsu
Yoshiharu Ozaki
Kazuo Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7007881A priority Critical patent/JPS57186335A/en
Publication of JPS57186335A publication Critical patent/JPS57186335A/en
Publication of JPH0143453B2 publication Critical patent/JPH0143453B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain accurately a fine pattern by employing gas containing hydrocarbon having up to 8 oxygen and carbon atoms as the gas for generating a low temperature gas plasma when a thin organic material film formed on a substrate is etched through a mask by the plasma. CONSTITUTION:A photoresist mask 2 of organic material is coated on an Si substrate 1, is baked at 200 deg.C for approx. 1hr, and an SiO2 is deposited on the film by ion beam sputtering. Then, a mask 3 of a photoresist film is formed on the film, and the part of the exposed film 2 is dry etched with a parallel flat plate type plasma etching unit. At this time, (O2+C2H4) gas containing at least up to 8 oxygen and carbon atoms is used as an etching gas. In this manner, no side etching occurs, and a vertical wall can be obtained.
JP7007881A 1981-05-12 1981-05-12 Forming method for pattern Granted JPS57186335A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7007881A JPS57186335A (en) 1981-05-12 1981-05-12 Forming method for pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7007881A JPS57186335A (en) 1981-05-12 1981-05-12 Forming method for pattern

Publications (2)

Publication Number Publication Date
JPS57186335A true JPS57186335A (en) 1982-11-16
JPH0143453B2 JPH0143453B2 (en) 1989-09-20

Family

ID=13421141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7007881A Granted JPS57186335A (en) 1981-05-12 1981-05-12 Forming method for pattern

Country Status (1)

Country Link
JP (1) JPS57186335A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786236A (en) * 1993-09-17 1995-03-31 Nec Corp Manufacture of semiconductor device
JP2002543613A (en) * 1999-05-05 2002-12-17 ラム・リサーチ・コーポレーション Techniques for etching low capacitance dielectric layers
KR100800165B1 (en) 2006-12-28 2008-02-01 주식회사 하이닉스반도체 Method of manufacturing semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107775A (en) * 1975-03-19 1976-09-24 Hitachi Ltd Handotaisochino bisaikakohoho
JPS5497373A (en) * 1978-01-19 1979-08-01 Mitsubishi Electric Corp Removal method of resist
JPS5623752A (en) * 1979-08-01 1981-03-06 Matsushita Electronics Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107775A (en) * 1975-03-19 1976-09-24 Hitachi Ltd Handotaisochino bisaikakohoho
JPS5497373A (en) * 1978-01-19 1979-08-01 Mitsubishi Electric Corp Removal method of resist
JPS5623752A (en) * 1979-08-01 1981-03-06 Matsushita Electronics Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786236A (en) * 1993-09-17 1995-03-31 Nec Corp Manufacture of semiconductor device
JP2002543613A (en) * 1999-05-05 2002-12-17 ラム・リサーチ・コーポレーション Techniques for etching low capacitance dielectric layers
JP4657458B2 (en) * 1999-05-05 2011-03-23 ラム リサーチ コーポレーション Techniques for etching low-capacity dielectric layers
KR100800165B1 (en) 2006-12-28 2008-02-01 주식회사 하이닉스반도체 Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH0143453B2 (en) 1989-09-20

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