JPS53105982A - Micropattern formation method - Google Patents

Micropattern formation method

Info

Publication number
JPS53105982A
JPS53105982A JP2123377A JP2123377A JPS53105982A JP S53105982 A JPS53105982 A JP S53105982A JP 2123377 A JP2123377 A JP 2123377A JP 2123377 A JP2123377 A JP 2123377A JP S53105982 A JPS53105982 A JP S53105982A
Authority
JP
Japan
Prior art keywords
thin film
formation method
micropattern
micropattern formation
thicknesst
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2123377A
Other languages
Japanese (ja)
Other versions
JPS6152568B2 (en
Inventor
Hiroshi Gokan
Sotaro Edokoro
Yoshimasa Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2123377A priority Critical patent/JPS53105982A/en
Publication of JPS53105982A publication Critical patent/JPS53105982A/en
Publication of JPS6152568B2 publication Critical patent/JPS6152568B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a micropattern of thicknesst, by providing the auxiliary thin film of more than 2t thickness onto the thin film of thicknesst or the resist mask, giving an ion etching only to the auxiliary thin film using the resist formed on the auxiliary thin film for the mask and then giving an etching with no exfoliation of the resist mask.
COPYRIGHT: (C)1978,JPO&Japio
JP2123377A 1977-02-28 1977-02-28 Micropattern formation method Granted JPS53105982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2123377A JPS53105982A (en) 1977-02-28 1977-02-28 Micropattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2123377A JPS53105982A (en) 1977-02-28 1977-02-28 Micropattern formation method

Publications (2)

Publication Number Publication Date
JPS53105982A true JPS53105982A (en) 1978-09-14
JPS6152568B2 JPS6152568B2 (en) 1986-11-13

Family

ID=12049304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2123377A Granted JPS53105982A (en) 1977-02-28 1977-02-28 Micropattern formation method

Country Status (1)

Country Link
JP (1) JPS53105982A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60137023A (en) * 1983-12-26 1985-07-20 Fujitsu Ltd Forming method of pattern and device used for executing said method
JPS60140725A (en) * 1983-12-28 1985-07-25 Fujitsu Ltd Pattern forming method
JP2012208481A (en) * 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd Liquid crystal display device and manufacturing method for liquid crystal display device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60137023A (en) * 1983-12-26 1985-07-20 Fujitsu Ltd Forming method of pattern and device used for executing said method
JPS60140725A (en) * 1983-12-28 1985-07-25 Fujitsu Ltd Pattern forming method
JPH0469418B2 (en) * 1983-12-28 1992-11-06 Fujitsu Ltd
JP2012208481A (en) * 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd Liquid crystal display device and manufacturing method for liquid crystal display device
US9454048B2 (en) 2011-03-11 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method of liquid crystal display device

Also Published As

Publication number Publication date
JPS6152568B2 (en) 1986-11-13

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