JPS5798679A - Dry etching device - Google Patents

Dry etching device

Info

Publication number
JPS5798679A
JPS5798679A JP17488780A JP17488780A JPS5798679A JP S5798679 A JPS5798679 A JP S5798679A JP 17488780 A JP17488780 A JP 17488780A JP 17488780 A JP17488780 A JP 17488780A JP S5798679 A JPS5798679 A JP S5798679A
Authority
JP
Japan
Prior art keywords
substrate
pattern
emitter
irradiated
converged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17488780A
Other languages
Japanese (ja)
Inventor
Tsunetoshi Arikado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17488780A priority Critical patent/JPS5798679A/en
Publication of JPS5798679A publication Critical patent/JPS5798679A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To perform fine working to the order of submicron easily with high accuracy by using a light transmittable mask substrate with a secondary electron release pattern of a photoemitter layer on the surface in a direct electron beam drawing method.
CONSTITUTION: A mask substrate 9 is disposed in the position opposite to an object 7 to be etched placed on the sample stage 6 in an etching chamber 1. The substrate 9 is formed of a glass substrate 9a, a thin film 9b of Cr or its oxide, and a photoemitter 9c suh as CsI, and is formed with a desired mask pattern. Caseous XeF2 is introduced into the chamber 1, a magnetic field is applied in the direction perpendicular to the object 7 surface by an annular electromagnet 11 and high voltage is applied between the stage 6 and a support member 8, that is, emitter 9c, by a DC electric power source 12. Further, UV light or the like is irradiated to the substrate 9 with a lamp 10, and the secondary electrons released from the emitter 9c are converged by said magnetic field and electric field and the converged electrons are irradiated to the object 7, whereby the pattern is transferred and the object is etched. Hence, the degradation in working accuracy owing to the low dry etching resistance of the resist is prevented.
COPYRIGHT: (C)1982,JPO&Japio
JP17488780A 1980-12-11 1980-12-11 Dry etching device Pending JPS5798679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17488780A JPS5798679A (en) 1980-12-11 1980-12-11 Dry etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17488780A JPS5798679A (en) 1980-12-11 1980-12-11 Dry etching device

Publications (1)

Publication Number Publication Date
JPS5798679A true JPS5798679A (en) 1982-06-18

Family

ID=15986397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17488780A Pending JPS5798679A (en) 1980-12-11 1980-12-11 Dry etching device

Country Status (1)

Country Link
JP (1) JPS5798679A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194436A (en) * 1983-04-20 1984-11-05 Kokusai Electric Co Ltd Dry etching method and device therefor
US6849471B2 (en) 2003-03-28 2005-02-01 Reflectivity, Inc. Barrier layers for microelectromechanical systems
US6913942B2 (en) 2003-03-28 2005-07-05 Reflectvity, Inc Sacrificial layers for use in fabrications of microelectromechanical devices
US6942811B2 (en) 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
US6960305B2 (en) 1999-10-26 2005-11-01 Reflectivity, Inc Methods for forming and releasing microelectromechanical structures
US6965468B2 (en) 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US6980347B2 (en) 2003-07-03 2005-12-27 Reflectivity, Inc Micromirror having reduced space between hinge and mirror plate of the micromirror
US7019376B2 (en) 2000-08-11 2006-03-28 Reflectivity, Inc Micromirror array device with a small pitch size
US7027200B2 (en) 2002-03-22 2006-04-11 Reflectivity, Inc Etching method used in fabrications of microstructures
US7041224B2 (en) 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US7645704B2 (en) 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194436A (en) * 1983-04-20 1984-11-05 Kokusai Electric Co Ltd Dry etching method and device therefor
US6960305B2 (en) 1999-10-26 2005-11-01 Reflectivity, Inc Methods for forming and releasing microelectromechanical structures
US7041224B2 (en) 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US6942811B2 (en) 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
US7019376B2 (en) 2000-08-11 2006-03-28 Reflectivity, Inc Micromirror array device with a small pitch size
US7027200B2 (en) 2002-03-22 2006-04-11 Reflectivity, Inc Etching method used in fabrications of microstructures
US6913942B2 (en) 2003-03-28 2005-07-05 Reflectvity, Inc Sacrificial layers for use in fabrications of microelectromechanical devices
US6849471B2 (en) 2003-03-28 2005-02-01 Reflectivity, Inc. Barrier layers for microelectromechanical systems
US7153443B2 (en) 2003-03-28 2006-12-26 Texas Instruments Incorporated Microelectromechanical structure and a method for making the same
US6965468B2 (en) 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US6970281B2 (en) 2003-07-03 2005-11-29 Reflectivity, Inc. Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US6980347B2 (en) 2003-07-03 2005-12-27 Reflectivity, Inc Micromirror having reduced space between hinge and mirror plate of the micromirror
US6985277B2 (en) 2003-07-03 2006-01-10 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US6972891B2 (en) 2003-07-24 2005-12-06 Reflectivity, Inc Micromirror having reduced space between hinge and mirror plate of the micromirror
US7002726B2 (en) 2003-07-24 2006-02-21 Reflectivity, Inc. Micromirror having reduced space between hinge and mirror plate of the micromirror
US7645704B2 (en) 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures

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