JPS57146252A - Method for washing of aluminoborosilicate glass substrate for photo mask - Google Patents

Method for washing of aluminoborosilicate glass substrate for photo mask

Info

Publication number
JPS57146252A
JPS57146252A JP3096981A JP3096981A JPS57146252A JP S57146252 A JPS57146252 A JP S57146252A JP 3096981 A JP3096981 A JP 3096981A JP 3096981 A JP3096981 A JP 3096981A JP S57146252 A JPS57146252 A JP S57146252A
Authority
JP
Japan
Prior art keywords
glass substrate
photo mask
washed
aqueous solution
washing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3096981A
Other languages
Japanese (ja)
Inventor
Tsuneo Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Hoya Electronics Corp
Original Assignee
Hoya Corp
Hoya Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp, Hoya Electronics Corp filed Critical Hoya Corp
Priority to JP3096981A priority Critical patent/JPS57146252A/en
Publication of JPS57146252A publication Critical patent/JPS57146252A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting

Abstract

PURPOSE:To make the boundary part of a photo mask pattern smooth to enhance the exfoliation strength, by washing an aluminoborosilicate glass substrate, where the coefficient of linear expansion is a specific value or below, with an aqueous solution where the aqueous solution of condensed phosphoric acid and a neutral detergent are mixed. CONSTITUTION:After the surface of a glass substrate for photo mask which consists of the aluminoborosilicate glass including MgO or PbO and has 60X 10<-7>/ deg.C coefficient of linear expansion is polished, this glass substrate is washed with pure water. Next, the glass substrate is washed with an aqueous solution where the aqueous solution of condensed phosphoric acid and a neutral detergent are mixed. Next, the glass substrate is washed with pure water and is dried. When a pattern is formed on, for example, chromium mask balnks made from this washed glass substrate, the boundary of the pattern of this photo mask becomes smooth, and the exfoliation strength of the chromium film is enhanced.
JP3096981A 1981-03-04 1981-03-04 Method for washing of aluminoborosilicate glass substrate for photo mask Pending JPS57146252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3096981A JPS57146252A (en) 1981-03-04 1981-03-04 Method for washing of aluminoborosilicate glass substrate for photo mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3096981A JPS57146252A (en) 1981-03-04 1981-03-04 Method for washing of aluminoborosilicate glass substrate for photo mask

Publications (1)

Publication Number Publication Date
JPS57146252A true JPS57146252A (en) 1982-09-09

Family

ID=12318489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3096981A Pending JPS57146252A (en) 1981-03-04 1981-03-04 Method for washing of aluminoborosilicate glass substrate for photo mask

Country Status (1)

Country Link
JP (1) JPS57146252A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03265547A (en) * 1990-03-16 1991-11-26 Nippon Parkerizing Co Ltd Surface treatment of glass
EP0589713A2 (en) * 1992-09-25 1994-03-30 Sharp Kabushiki Kaisha A thin film semiconductor device and a method for producing the same
JP2001003098A (en) * 1999-06-24 2001-01-09 Toho Chem Ind Co Ltd Detergent composition for removing fine particles excellent in rinsability
JP2020083664A (en) * 2018-11-15 2020-06-04 日本電気硝子株式会社 Production method of glass article

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03265547A (en) * 1990-03-16 1991-11-26 Nippon Parkerizing Co Ltd Surface treatment of glass
EP0589713A2 (en) * 1992-09-25 1994-03-30 Sharp Kabushiki Kaisha A thin film semiconductor device and a method for producing the same
EP0589713A3 (en) * 1992-09-25 1994-09-21 Sharp Kk A thin film semiconductor device and a method for producing the same
US5707746A (en) * 1992-09-25 1998-01-13 Sharp Kabushiki Kaisha Thin film transistor device with advanced characteristics by improved matching between a glass substrate and a silicon nitride layer
US6013310A (en) * 1992-09-25 2000-01-11 Sharp Kabushiki Kaisha Method for producing a thin film semiconductor device
JP2001003098A (en) * 1999-06-24 2001-01-09 Toho Chem Ind Co Ltd Detergent composition for removing fine particles excellent in rinsability
JP2020083664A (en) * 2018-11-15 2020-06-04 日本電気硝子株式会社 Production method of glass article

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