JPS54104775A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS54104775A
JPS54104775A JP1117778A JP1117778A JPS54104775A JP S54104775 A JPS54104775 A JP S54104775A JP 1117778 A JP1117778 A JP 1117778A JP 1117778 A JP1117778 A JP 1117778A JP S54104775 A JPS54104775 A JP S54104775A
Authority
JP
Japan
Prior art keywords
glass
film
particles
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1117778A
Other languages
Japanese (ja)
Other versions
JPS592373B2 (en
Inventor
Tetsuo Iwaki
Takayuki Konuma
Akihiko Kitamura
Kenji Kunihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP53011177A priority Critical patent/JPS592373B2/en
Publication of JPS54104775A publication Critical patent/JPS54104775A/en
Publication of JPS592373B2 publication Critical patent/JPS592373B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To selectively remove glass particles, by washing the glass with surface active agent after attaching the glass with electrodeposition.
CONSTITUTION: The thermal oxidation film 2 on the Si substrate 1 is photo-etched, and the glass 3 is selectively made electrode-position. Next, cleaning is made by using water solution or solution of surface active agent, and the glass particles 4 on the film 2 are removed and dried. Thus, only the particles 4 on the film 4 can be removed and the deficiency of photoetching after the formation of glass film can be reduced.
COPYRIGHT: (C)1979,JPO&Japio
JP53011177A 1978-02-03 1978-02-03 Manufacturing method of semiconductor device Expired JPS592373B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53011177A JPS592373B2 (en) 1978-02-03 1978-02-03 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53011177A JPS592373B2 (en) 1978-02-03 1978-02-03 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS54104775A true JPS54104775A (en) 1979-08-17
JPS592373B2 JPS592373B2 (en) 1984-01-18

Family

ID=11770767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53011177A Expired JPS592373B2 (en) 1978-02-03 1978-02-03 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS592373B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4976468A (en) * 1972-11-13 1974-07-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4976468A (en) * 1972-11-13 1974-07-23

Also Published As

Publication number Publication date
JPS592373B2 (en) 1984-01-18

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