JPS57124440A - Compound etching method - Google Patents

Compound etching method

Info

Publication number
JPS57124440A
JPS57124440A JP1038681A JP1038681A JPS57124440A JP S57124440 A JPS57124440 A JP S57124440A JP 1038681 A JP1038681 A JP 1038681A JP 1038681 A JP1038681 A JP 1038681A JP S57124440 A JPS57124440 A JP S57124440A
Authority
JP
Japan
Prior art keywords
etching
film
silicon nitride
nitride film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1038681A
Other languages
Japanese (ja)
Inventor
Hiroshi Ikejima
Seiji Takao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1038681A priority Critical patent/JPS57124440A/en
Publication of JPS57124440A publication Critical patent/JPS57124440A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Abstract

PURPOSE:To prevent a side-etching as well as to smoothen corner sections by a method wherein an isotropic etching processing and a non-isotropic processing are cojointly performed as a compound etching method. CONSTITUTION:A silicon nitride film 2 of approximately 1.2mum is formed on the surface of a silicon substrate 3 using a vapor-phase growing method and the like, and a silicon oxide film 1 of 0.2mum or thereabouts is formed on the surface of the film 2. Then, a prescribed photoresist film is formed on the surface of the silicon oxide film 1, and a master pattern is obtained by performing an etching on the silicon oxide film 1. The silicon nitride film 2 is etched to the middle part using thermal phosphoric acid, and then the remaining part of the silicon nitride film 2 is removed by performing a reactive etching using CF gas. Accordingly, the silicon nitride film 2 can be etched as per master pattern, the corner of the pattern edge is steppingly formed, and a smooth sectional form can be obtained.
JP1038681A 1981-01-27 1981-01-27 Compound etching method Pending JPS57124440A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1038681A JPS57124440A (en) 1981-01-27 1981-01-27 Compound etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1038681A JPS57124440A (en) 1981-01-27 1981-01-27 Compound etching method

Publications (1)

Publication Number Publication Date
JPS57124440A true JPS57124440A (en) 1982-08-03

Family

ID=11748673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1038681A Pending JPS57124440A (en) 1981-01-27 1981-01-27 Compound etching method

Country Status (1)

Country Link
JP (1) JPS57124440A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61295634A (en) * 1985-06-25 1986-12-26 Oki Electric Ind Co Ltd Dry etching method
JPS6360531A (en) * 1986-08-30 1988-03-16 Toshiba Corp Manufacture of semiconductor device
JPS63196039A (en) * 1987-02-10 1988-08-15 Fujitsu Ltd Plasma etching method
JPH01280317A (en) * 1988-05-06 1989-11-10 Matsushita Electric Ind Co Ltd Dry etching
JP2001007342A (en) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
JP2002026322A (en) * 2000-07-10 2002-01-25 Denso Corp Semiconductor device and manufacturing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5487172A (en) * 1977-12-23 1979-07-11 Hitachi Ltd Manufacture for simiconductor device
JPS5495186A (en) * 1978-01-12 1979-07-27 Sanyo Electric Co Ltd Production of compound semiconductor device
JPS5687666A (en) * 1979-12-20 1981-07-16 Toshiba Corp Plasma etching method
JPS5690525A (en) * 1979-11-28 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device
JPS577936A (en) * 1980-06-18 1982-01-16 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5487172A (en) * 1977-12-23 1979-07-11 Hitachi Ltd Manufacture for simiconductor device
JPS5495186A (en) * 1978-01-12 1979-07-27 Sanyo Electric Co Ltd Production of compound semiconductor device
JPS5690525A (en) * 1979-11-28 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device
JPS5687666A (en) * 1979-12-20 1981-07-16 Toshiba Corp Plasma etching method
JPS577936A (en) * 1980-06-18 1982-01-16 Fujitsu Ltd Manufacture of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61295634A (en) * 1985-06-25 1986-12-26 Oki Electric Ind Co Ltd Dry etching method
JPH0528489B2 (en) * 1985-06-25 1993-04-26 Oki Electric Ind Co Ltd
JPS6360531A (en) * 1986-08-30 1988-03-16 Toshiba Corp Manufacture of semiconductor device
JPS63196039A (en) * 1987-02-10 1988-08-15 Fujitsu Ltd Plasma etching method
JPH01280317A (en) * 1988-05-06 1989-11-10 Matsushita Electric Ind Co Ltd Dry etching
JP2001007342A (en) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture
JP2002026322A (en) * 2000-07-10 2002-01-25 Denso Corp Semiconductor device and manufacturing method

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