JPS57141919A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57141919A
JPS57141919A JP2748481A JP2748481A JPS57141919A JP S57141919 A JPS57141919 A JP S57141919A JP 2748481 A JP2748481 A JP 2748481A JP 2748481 A JP2748481 A JP 2748481A JP S57141919 A JPS57141919 A JP S57141919A
Authority
JP
Japan
Prior art keywords
epitaxial layer
oxidation
epitaxial
less
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2748481A
Other languages
Japanese (ja)
Inventor
Kohei Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2748481A priority Critical patent/JPS57141919A/en
Publication of JPS57141919A publication Critical patent/JPS57141919A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides

Abstract

PURPOSE:To perform the processing to make a thin epitaxial layer in uniform thickness by a single process, by removing oxide film by anode-oxiding the epitaxial layer formed on a semiconductor or insulation substrate while irradiating it with the light of the preset intensity and frequency. CONSTITUTION:In the process of manufacturing GaAs FET and the like, equalizing the property and providing the use in a high frequency are contrived by treating it with uniform controlling of anode-oxidation of the epitaxial layer thickness formed in high impurity density. The diode-oxidation is performed in a quartz container 32, provided in a dark box 31, containing an electrolyte 33 consisting of a mixture of tartaric acid water solution and propylene glycol, on the substrate 35 with an irregularly formed epitaxial layer 12 held immersed in the solution facing against a Pt negative electrode 36. The substrate 35, while treated, is irradiated with the light of a frequency less than 5,000Angstrom in less than 200 lux through a filter 40. Initial voltage corresponding to the remaining epitaxial thickness is applied for oxidation until the current drops to less than 1/10 at saturation. By this method an oxide layer 13 having a defect free epitaxial remains of uniform thickness is formed. The objective epitaxial layer 12 is formed by removing the oxide film 3.
JP2748481A 1981-02-26 1981-02-26 Manufacture of semiconductor device Pending JPS57141919A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2748481A JPS57141919A (en) 1981-02-26 1981-02-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2748481A JPS57141919A (en) 1981-02-26 1981-02-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57141919A true JPS57141919A (en) 1982-09-02

Family

ID=12222399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2748481A Pending JPS57141919A (en) 1981-02-26 1981-02-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57141919A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972141A (en) * 1982-09-10 1984-04-24 ウエスターン　エレクトリック　カムパニー，インコーポレーテッド Method of producing optical device
JPS59224176A (en) * 1983-06-03 1984-12-17 Nec Corp Manufacture of field effect transistor
US8303791B2 (en) 2006-05-04 2012-11-06 International Business Machines Corporation Apparatus and method for electrochemical processing of thin films on resistive substrates

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972141A (en) * 1982-09-10 1984-04-24 ウエスターン　エレクトリック　カムパニー，インコーポレーテッド Method of producing optical device
JPH0227812B2 (en) * 1982-09-10 1990-06-20 Ei Teii Ando Teii Tekunorojiizu Inc
JPS59224176A (en) * 1983-06-03 1984-12-17 Nec Corp Manufacture of field effect transistor
JPH047101B2 (en) * 1983-06-03 1992-02-07 Nippon Electric Co
US8303791B2 (en) 2006-05-04 2012-11-06 International Business Machines Corporation Apparatus and method for electrochemical processing of thin films on resistive substrates

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