JPS57104218A - Fabrication of semiconductor device - Google Patents

Fabrication of semiconductor device

Info

Publication number
JPS57104218A
JPS57104218A JP18113380A JP18113380A JPS57104218A JP S57104218 A JPS57104218 A JP S57104218A JP 18113380 A JP18113380 A JP 18113380A JP 18113380 A JP18113380 A JP 18113380A JP S57104218 A JPS57104218 A JP S57104218A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
contamination
irradiating
light
field oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18113380A
Other languages
Japanese (ja)
Inventor
Keiichiro Uda
Takeshi Goshima
Masao Nojiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP18113380A priority Critical patent/JPS57104218A/en
Publication of JPS57104218A publication Critical patent/JPS57104218A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To remove effectively contamination of the surface of a semiconductor substrate accruing from ion implantation by irradiating a light or electron beam onto a semiconductor substrate after ion implantation. CONSTITUTION:A semiconductor substrate 10 in which N-conduction type source and drain regions 3 and 3 are formed by implanting ions into a P-conduction type silicon substrate 1 through a field oxide layer 4, a gate electrode 5 and a window opened in the field oxide layer 4 is covered, with implantation of ions, by a contamination layer 7, affecting a characteristic of the device. Therefore, the contamination layer 7 can be removed by irradiating a laser beam 6 of, for example, an Nd:YAG laser. The similar effect can be also achieved by using the second harmonic wave of an Nd:YAG laser or light from a high-luminance flash lamp.
JP18113380A 1980-12-19 1980-12-19 Fabrication of semiconductor device Pending JPS57104218A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18113380A JPS57104218A (en) 1980-12-19 1980-12-19 Fabrication of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18113380A JPS57104218A (en) 1980-12-19 1980-12-19 Fabrication of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57104218A true JPS57104218A (en) 1982-06-29

Family

ID=16095447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18113380A Pending JPS57104218A (en) 1980-12-19 1980-12-19 Fabrication of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57104218A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5492862A (en) * 1993-01-12 1996-02-20 Tokyo Electron Limited Vacuum change neutralization method
US6092299A (en) * 1997-09-05 2000-07-25 Tokyo Electron Limited Vacuum processing apparatus
US6207006B1 (en) 1997-09-18 2001-03-27 Tokyo Electron Limited Vacuum processing apparatus
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US6835607B2 (en) 1993-10-01 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for manufacturing the same
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US9105727B2 (en) 2002-04-09 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10133139B2 (en) 2002-05-17 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US7351615B2 (en) 1992-12-26 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US5492862A (en) * 1993-01-12 1996-02-20 Tokyo Electron Limited Vacuum change neutralization method
US6835607B2 (en) 1993-10-01 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for manufacturing the same
US7170138B2 (en) 1993-10-01 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7301209B2 (en) 1993-10-01 2007-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6092299A (en) * 1997-09-05 2000-07-25 Tokyo Electron Limited Vacuum processing apparatus
US6207006B1 (en) 1997-09-18 2001-03-27 Tokyo Electron Limited Vacuum processing apparatus
US9406806B2 (en) 2002-04-09 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9105727B2 (en) 2002-04-09 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US9666614B2 (en) 2002-04-09 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10050065B2 (en) 2002-04-09 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10083995B2 (en) 2002-04-09 2018-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10700106B2 (en) 2002-04-09 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10854642B2 (en) 2002-04-09 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US11101299B2 (en) 2002-04-09 2021-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10133139B2 (en) 2002-05-17 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US10527903B2 (en) 2002-05-17 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Display device
US11422423B2 (en) 2002-05-17 2022-08-23 Semiconductor Energy Laboratory Co., Ltd. Display device

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