JPS6449272A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6449272A JPS6449272A JP20671287A JP20671287A JPS6449272A JP S6449272 A JPS6449272 A JP S6449272A JP 20671287 A JP20671287 A JP 20671287A JP 20671287 A JP20671287 A JP 20671287A JP S6449272 A JPS6449272 A JP S6449272A
- Authority
- JP
- Japan
- Prior art keywords
- electrolyte
- semiconductor layer
- impressed
- tft
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000003792 electrolyte Substances 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 abstract 2
- 239000004327 boric acid Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To control a to-be-removed film thickness easily and with good reproducibility and to manufacture a TFT without removing a semiconductor layer constituting a channel part by a method wherein a non-single-crystal semiconductor layer composed of mainly of silicon containing an impurity is removed by an anodic oxidation operation. CONSTITUTION:After a source electrode and a drain electrode have been formed, they are immersed in an electrolyte 9 composed of boric acid together with a counter electrode 8 composed of platinum or carbon. Then, a power supply 10 is connected by using lead wires 11 in such a way that a positive voltage is impressed on the source electrode 6a and that a negative voltage is impressed on the counter electrode 8; the voltage of 10-20V is impressed until no electric current flows; an amorphous silicon semiconductor layer containing phosphorus is oxidized; a TFT is completed. Instead of the electrolyte composed of the boric acid, an aqueous solution composed of hydrofluoric acid and ammonium fluoride may be used as the electrolyte.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20671287A JPS6449272A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20671287A JPS6449272A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6449272A true JPS6449272A (en) | 1989-02-23 |
Family
ID=16527861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20671287A Pending JPS6449272A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6449272A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0506117A2 (en) * | 1991-03-29 | 1992-09-30 | Casio Computer Company Limited | Thin-film transistor |
| JPH05136416A (en) * | 1990-03-27 | 1993-06-01 | Gold Star Co Ltd | Thin-film transistor utilizing plasma oxidation and method thereof |
| JPH05165058A (en) * | 1991-12-13 | 1993-06-29 | Casio Comput Co Ltd | Thin film transistor panel and its manufacture |
| US5326712A (en) * | 1991-12-03 | 1994-07-05 | Samsung Electronics Co., Ltd. | Method for manufacturing a thin film transistor |
| WO2001057588A1 (en) * | 2000-02-04 | 2001-08-09 | Matsushita Electric Industrial Co., Ltd. | Insulated-gate transistor for liquid crystal display and method for fabricating the same |
| US6429456B1 (en) | 1997-04-23 | 2002-08-06 | Nec Corporation | Thin-film transistor elements and methods of making same |
| CN105789486A (en) * | 2016-03-28 | 2016-07-20 | 华南理工大学 | Selective oriented deposition method of organic film |
-
1987
- 1987-08-20 JP JP20671287A patent/JPS6449272A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05136416A (en) * | 1990-03-27 | 1993-06-01 | Gold Star Co Ltd | Thin-film transistor utilizing plasma oxidation and method thereof |
| EP0506117A2 (en) * | 1991-03-29 | 1992-09-30 | Casio Computer Company Limited | Thin-film transistor |
| US5326712A (en) * | 1991-12-03 | 1994-07-05 | Samsung Electronics Co., Ltd. | Method for manufacturing a thin film transistor |
| JPH05165058A (en) * | 1991-12-13 | 1993-06-29 | Casio Comput Co Ltd | Thin film transistor panel and its manufacture |
| US6429456B1 (en) | 1997-04-23 | 2002-08-06 | Nec Corporation | Thin-film transistor elements and methods of making same |
| US6566174B1 (en) | 1997-04-23 | 2003-05-20 | Nec Corporation | Thin-film transistor elements and methods of making same |
| WO2001057588A1 (en) * | 2000-02-04 | 2001-08-09 | Matsushita Electric Industrial Co., Ltd. | Insulated-gate transistor for liquid crystal display and method for fabricating the same |
| CN105789486A (en) * | 2016-03-28 | 2016-07-20 | 华南理工大学 | Selective oriented deposition method of organic film |
| CN105789486B (en) * | 2016-03-28 | 2018-05-15 | 华南理工大学 | A kind of selective orientated deposition method of organic film |
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