JPS57107074A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57107074A JPS57107074A JP18458080A JP18458080A JPS57107074A JP S57107074 A JPS57107074 A JP S57107074A JP 18458080 A JP18458080 A JP 18458080A JP 18458080 A JP18458080 A JP 18458080A JP S57107074 A JPS57107074 A JP S57107074A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- depletion layer
- lattice defects
- substrate
- hcl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 230000007547 defect Effects 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To prevent false functioning caused by diffusion of minor carriers by providing highly concentrated lattice defects of the same type as the semiconductor substrate and of conductive type at the end of a depletion layer. CONSTITUTION:False functioning takes place by alpha rays when an MOS FET and a dynamic memory cell are formed on a silicon substrate 1. Therefore, lattice defects 15 of 10<6>-10<8>/cm<3> are created at a depth of about 5 to 50mum from the surface by oxidation treatment at 750 deg.C for several tens of hours after the silicon substrate 1 oxidized by HCl at 1,150 deg.C for a few hours. The oxidation by HCl is to be carried out in a manner that a depletion layer is formed at such a depth as the depletion layer does not reach the layer 15. As rebonding speed of minor carriers is about 1/100 of that of normal silicon substrates in a region having high density lattice defects, false functioning caused by alpha rays can remarkably be reduced. It is very effective to compensate reduction in surface concentration resulting from high temperature treatment by ion implantation for prevention of characteristic variation and to provide a layer 16 of the same type as the substrate, of concentration of 10<19>-10<20>/cm<3> and of 10mum thick in contact with the layer 15 for making the depletion layer come into contact when voltage applied to an electrode 5 or impurity layer 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18458080A JPS57107074A (en) | 1980-12-25 | 1980-12-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18458080A JPS57107074A (en) | 1980-12-25 | 1980-12-25 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57107074A true JPS57107074A (en) | 1982-07-03 |
Family
ID=16155689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18458080A Pending JPS57107074A (en) | 1980-12-25 | 1980-12-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57107074A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5988832A (en) * | 1982-11-12 | 1984-05-22 | Fujitsu Ltd | Semiconductor device |
| JPS59182559A (en) * | 1983-04-01 | 1984-10-17 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JPS6015963A (en) * | 1983-07-06 | 1985-01-26 | Toshiba Corp | Metal oxide semiconductor type integrated circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5515237A (en) * | 1978-07-19 | 1980-02-02 | Toshiba Corp | Semiconductor device |
| JPS55156358A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Semiconductor memory device |
| JPS55162258A (en) * | 1979-06-05 | 1980-12-17 | Fujitsu Ltd | Semiconductor memory device |
-
1980
- 1980-12-25 JP JP18458080A patent/JPS57107074A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5515237A (en) * | 1978-07-19 | 1980-02-02 | Toshiba Corp | Semiconductor device |
| JPS55156358A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Semiconductor memory device |
| JPS55162258A (en) * | 1979-06-05 | 1980-12-17 | Fujitsu Ltd | Semiconductor memory device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5988832A (en) * | 1982-11-12 | 1984-05-22 | Fujitsu Ltd | Semiconductor device |
| JPS59182559A (en) * | 1983-04-01 | 1984-10-17 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JPS6015963A (en) * | 1983-07-06 | 1985-01-26 | Toshiba Corp | Metal oxide semiconductor type integrated circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5623771A (en) | Semiconductor memory | |
| CA1130473A (en) | Mosfet substrate sensitivity control | |
| JPS6435959A (en) | Thin film transistor | |
| JPS57107074A (en) | Semiconductor device | |
| JPS5769778A (en) | Semiconductor device | |
| JPS6433970A (en) | Field effect semiconductor device | |
| JPS544084A (en) | Manufacture for semiconductor integrated circuit | |
| JPS5790973A (en) | Semiconductor base body | |
| JPS6449274A (en) | Superhigh-speed semiconductor device | |
| JPS57130476A (en) | Semiconductor device | |
| JPS5518005A (en) | Mos-type dynamic memory | |
| JPS5518006A (en) | Mos-type dynamic memory | |
| JPS6450465A (en) | Semiconductor device | |
| JPS5552275A (en) | Junction field effect transistor | |
| JPS54148384A (en) | Power-use high dielectric strength field effect transistor | |
| JPS5286086A (en) | Field effect transistor | |
| JPS5599765A (en) | Mos memory device | |
| JPS6428950A (en) | Semiconductor storage device and manufacture thereof | |
| JPS5588325A (en) | Manufacture of semiconductor device | |
| JPS52136583A (en) | Mos type semiconductor device | |
| JPS5666063A (en) | Manufacture of semiconductor device | |
| JPS5797668A (en) | Semiconductor device | |
| JPS6415916A (en) | Manufacture of semiconductor device | |
| JPS5518072A (en) | Mos semiconductor device | |
| JPS6449266A (en) | Transistor |