JPS5687361A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS5687361A JPS5687361A JP16405979A JP16405979A JPS5687361A JP S5687361 A JPS5687361 A JP S5687361A JP 16405979 A JP16405979 A JP 16405979A JP 16405979 A JP16405979 A JP 16405979A JP S5687361 A JPS5687361 A JP S5687361A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- drain
- source
- film
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8221—Three dimensional integrated circuits stacked in different levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To reduce the parasitic capacities of source and drain of the semiconductor device and to enable a high speed operation by a method wherein the FET is manufactured using a laser anneal epitaxial growth method. CONSTITUTION:An SiO2 film 32 is formed on a P type Si single crystalline substrate 31 providing an opening part, and an amorphous Si layer or a polycrystalline Si layer 35 is formed on it. The whole surface is irradiated with a laser beam applying the Q-switching method to convert the amorphous Si layer or the polycrystalline Si layer into a single crystalline Si film 35. The diffusion treatment is performed with the Si film 35 to form N<+> type regions 33, 34 and electrodes 37, 38 are provided to be used as the source, drain, and a center part electrode 36 is provided to be used as the gate. Accordingly the capacities of the source 33, the drain 34 against the substrate 31 are reduced, and the high frequency characteristic can be improved.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16405979A JPS5687361A (en) | 1979-12-19 | 1979-12-19 | Semiconductor device and its manufacture |
NL8006339A NL8006339A (en) | 1979-11-21 | 1980-11-20 | SEMICONDUCTOR DEVICE AND METHOD FOR THE MANUFACTURE THEREOF. |
DE19803043913 DE3043913A1 (en) | 1979-11-21 | 1980-11-21 | SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THEIR PRODUCTION |
US06/563,036 US4609407A (en) | 1979-11-21 | 1983-12-19 | Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16405979A JPS5687361A (en) | 1979-12-19 | 1979-12-19 | Semiconductor device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5687361A true JPS5687361A (en) | 1981-07-15 |
Family
ID=15785996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16405979A Pending JPS5687361A (en) | 1979-11-21 | 1979-12-19 | Semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5687361A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5730372A (en) * | 1980-07-31 | 1982-02-18 | Fujitsu Ltd | Semiconductor device |
JPS587869A (en) * | 1981-07-07 | 1983-01-17 | Nec Corp | Semiconductor device |
JPS5833869A (en) * | 1981-08-25 | 1983-02-28 | Toshiba Corp | Semiconductor device |
JPS6039859A (en) * | 1983-08-12 | 1985-03-01 | Fujitsu Ltd | Semiconductor device |
JPS6135565A (en) * | 1984-07-27 | 1986-02-20 | Hitachi Ltd | Thin film transistor |
JPS63304657A (en) * | 1987-06-04 | 1988-12-12 | Fujitsu Ltd | Manufacture of semiconductor device |
KR100379859B1 (en) * | 1994-05-02 | 2003-07-18 | 소니 가부시끼 가이샤 | Manufacturing method of semiconductor chip for display |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503780A (en) * | 1973-05-15 | 1975-01-16 | ||
JPS5491185A (en) * | 1977-12-28 | 1979-07-19 | Fujitsu Ltd | Semiconductor divece |
-
1979
- 1979-12-19 JP JP16405979A patent/JPS5687361A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503780A (en) * | 1973-05-15 | 1975-01-16 | ||
JPS5491185A (en) * | 1977-12-28 | 1979-07-19 | Fujitsu Ltd | Semiconductor divece |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5730372A (en) * | 1980-07-31 | 1982-02-18 | Fujitsu Ltd | Semiconductor device |
JPH0147022B2 (en) * | 1980-07-31 | 1989-10-12 | Fujitsu Ltd | |
JPS587869A (en) * | 1981-07-07 | 1983-01-17 | Nec Corp | Semiconductor device |
JPS5833869A (en) * | 1981-08-25 | 1983-02-28 | Toshiba Corp | Semiconductor device |
JPS6039859A (en) * | 1983-08-12 | 1985-03-01 | Fujitsu Ltd | Semiconductor device |
JPS6135565A (en) * | 1984-07-27 | 1986-02-20 | Hitachi Ltd | Thin film transistor |
JPS63304657A (en) * | 1987-06-04 | 1988-12-12 | Fujitsu Ltd | Manufacture of semiconductor device |
KR100379859B1 (en) * | 1994-05-02 | 2003-07-18 | 소니 가부시끼 가이샤 | Manufacturing method of semiconductor chip for display |
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