JPS5691434A - Method for forming pattern of deposited film by lift-off method - Google Patents

Method for forming pattern of deposited film by lift-off method

Info

Publication number
JPS5691434A
JPS5691434A JP16811779A JP16811779A JPS5691434A JP S5691434 A JPS5691434 A JP S5691434A JP 16811779 A JP16811779 A JP 16811779A JP 16811779 A JP16811779 A JP 16811779A JP S5691434 A JPS5691434 A JP S5691434A
Authority
JP
Japan
Prior art keywords
photoresist
film
lift
deposited film
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16811779A
Other languages
Japanese (ja)
Inventor
Hideo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16811779A priority Critical patent/JPS5691434A/en
Publication of JPS5691434A publication Critical patent/JPS5691434A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes

Abstract

PURPOSE:To improve the dimensional accuracy of a deposited film and enable fine working in a pattern forming method by a lift-off method in vacuum deposition by providing a two-layer photoresist film in an eave shape for covering via Al on a substrate and carrying out deposition. CONSTITUTION:The first photoresist 1 is applied to a substrate 5, then Al 3 is deposited all over the surface, and further on it, the second photoresist 2 different from the first one is applied. The first and the second photoresists have developers which do not react with each other. Exposing and developing the second photoresist 2 selectively using a mask, then overetching the Al and exposing and developing the first photoresist 1, an eave-shaped covering film can be formed, and by depositing using this film, the dimensional accuracy of a deposited film can be improved, so that fine working can be performed.
JP16811779A 1979-12-26 1979-12-26 Method for forming pattern of deposited film by lift-off method Pending JPS5691434A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16811779A JPS5691434A (en) 1979-12-26 1979-12-26 Method for forming pattern of deposited film by lift-off method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16811779A JPS5691434A (en) 1979-12-26 1979-12-26 Method for forming pattern of deposited film by lift-off method

Publications (1)

Publication Number Publication Date
JPS5691434A true JPS5691434A (en) 1981-07-24

Family

ID=15862160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16811779A Pending JPS5691434A (en) 1979-12-26 1979-12-26 Method for forming pattern of deposited film by lift-off method

Country Status (1)

Country Link
JP (1) JPS5691434A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828830A (en) * 1981-07-27 1983-02-19 Nec Corp Formation of photo resist stencil
JPS58145128A (en) * 1982-02-22 1983-08-29 Nec Corp Formation of photo resist stencil
EP2901212A4 (en) * 2012-09-28 2016-06-01 Idit Technologies Corp Method for fabrication of nano-structures

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828830A (en) * 1981-07-27 1983-02-19 Nec Corp Formation of photo resist stencil
JPH0239090B2 (en) * 1981-07-27 1990-09-04 Nippon Electric Co
JPS58145128A (en) * 1982-02-22 1983-08-29 Nec Corp Formation of photo resist stencil
EP2901212A4 (en) * 2012-09-28 2016-06-01 Idit Technologies Corp Method for fabrication of nano-structures

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