JPS58145128A - Formation of photo resist stencil - Google Patents
Formation of photo resist stencilInfo
- Publication number
- JPS58145128A JPS58145128A JP2711882A JP2711882A JPS58145128A JP S58145128 A JPS58145128 A JP S58145128A JP 2711882 A JP2711882 A JP 2711882A JP 2711882 A JP2711882 A JP 2711882A JP S58145128 A JPS58145128 A JP S58145128A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- exposed
- photo resist
- resist layer
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Abstract
Description
【発明の詳細な説明】
このＪ＋； ’９」はノヨセフ７７呆槓回蹟寺のり７
１ ；ｊノバ′ターニングにオリ用サイー１イ）フ２；
ト１／シベ１・メ・ノ・・ンルυ目β１戊万γ去（こ
ト１丁６ ’ｂ （／，］ ”Ｃ＃）へ。[Detailed description of the invention] This J+; '9' is Noyoseph 77
1 ;j Nova' Turning for ori 1 a) Fu 2;
To 1/Shibe 1 Me no... Nru υ eyes β 1 戊Manγleft (Koto 1 Cho 6 'b (/,] ``C#).
リソ１・オフ？人と口、・：＋５ １ Ｉｇ．目（，ボ
づ．Ｊ： −．） ｉ＋、１１ノ「１川桶造かゝゝき（
υこ″型５，−シＰノ４１・ｌ’ノ／、ト （一口１１
’Ｘｌ（ａＪ） ’Ａ −ｒ ７ ， ノレ （
ｒ＆きイＩり Ｕ月ノｌｊイ１凸１脊こ、 ４１４ ／
ｌ Ｃり７ＬＩ１１ｊリｄ Ｉ ２ ， Ｉ ３ ４ｉ
−批４Ｉ．Ｌ／ （ ｍ ｌ １ンｌ（１）Ｃｌ 、”
７）（＋’てス７ッン，，合，ｉｊ’＋ Ｉｙｋ ’り
。フ，１・レノスｌ−１青イ１ンｒｒｉ・父Ｒ１レ５１
゛．ε一川い−Ｃ （ｊ（ｒ ｌ１！ｌｌｔ ｌ−．ノ
＜ ６ １県ｉＬ小５ｒ／ｔ７１１１１ＱＩ１１ １
：１企１ｊｊ ’Ａし，゛（ 、 Ｉソ「：？イ（
／）バ ’％−７ −、ｌ：’ ｉ−１”リ− イ〕
／（−ＩＩＩ１ノリ％ｉ イＥ １，’，７ ／：，）
（ｊｆ，４１ ＋、ｌｉｅノ）ノハノくであ句。Liso 1 off? People and mouth: +5 1 Ig. Eyes (, Bozu. J: -.) i+, 11 No. 1 Kawa Okezo Kaゝゝki (
υko'' type 5, -shiPノ41・l'ノ/,to (bite 11
'Xl(aJ) 'A −r 7, nore (
r&kii Iri U moon no lj i 1 convex 1 spine, 414 /
l Cri7LI11jlid I 2, I 3 4i
-Critique 4I. L/(ml1nl(1)Cl,"
7) (+'tes7nn,, go, ij'+ Iyk'ri. Fu, 1. Renos l-1 blue I1 in ri. Father R1 Le 51
゛． εIchikawai-C (j(r l1!llt l-.ノ< 6 1 prefecture iL elementary school 5r/t71111QI11 1
：１程１jj 'Aし、゛(、Iso「：?イ(
/) Ba'%-7-, l:'i-1"li-i]
/(-III1 Nori%i IE 1,',7 /:,)
(jf, 41 +, lieノ) Nohano Kude haiku.
ショセノ ノン’＋！：４：ｊｌＥノ１１・［１｛り１
ノ，シ刀Ｉゾｌ−１セス（（二，１３いでｆＪ１γ（芋
１１■一土１曾Ｕ月プ客ｊイ１青吊１４ｆＪプジＦｒ
ｉｌＪ ｌノ＆ ｉこ又ｉ専１＋；＋Ｉ曽 ］ ２（
Ｚ ＩＨｆ ｉ．ｒ＜ 轡ｉ１＃ ｌｌｆ’ｒ ＩＺ
ハｆ ＬＩＬＩ −’Ｉ ’ ＜》 、１：４； ｌ
Ｉｇｌ（ａ）ｉＪスア／ノノレυ』ノｒＩ大バノメーη
νいＪ ， ｗ＋． ，Δ舎小−ｃｌ− １）’−、Ａ
−Ｊ−ノンルノｊ！”． Ｓ＋ｌＳ ＣＱ巾紹’ ｆ；
Ｊ Ｉｉ 曾Ｉｌｌ ：ｆｉＵ｝形イ人イ１；ノ〉ジ冫
Ｊｌし 、 ｗｉ． ｉ；ｉ クイ１イｈｍ ・１
館釦冫ｊ Ｏ，＋ Ｊ、畦目〕 ５−＾ｊ１．゛入Ｅし
、又Δ（コτ轡ム鍵層１２，１３０乃ノーνＪＩ１のｉ
＋＋易１屍く雇λχ１５１る。リフ１・４７法、符にジ
ョセノノンｗ Ａ’Ｒ 回ｕｈｅＵ》バター二７クに用
いり４１，ク〕リソ１・Ａｙｒ大ＭＪ．；いＣは、ス７
−ノ／ノレＣ／Ｊ Ｌ１ｖ一人Ｉｌｌ曹Ｓ，ひ８しのＬ
矛ＦｔＪ，ム’ｊ ｉ．ｌｌ ＣＯ中四＋４ （／．１
いづ”イ１舒も１同叫ｊよく、形！戊′りく）必endpa
ge:1
安／０あ＜）。Shoseno non'+! :4:jlEノ11・[1{ri1
No, Shi sword I Zo l-1 Seth ((2,13 in fJ1γ (Imo 11
ilJ lノ&i komata isen 1+;+Iso ] 2(
Z IHf i. r<轡i1#llf'r IZ
HAf LILI -'I'<》,1:4; l
Igl(a) iJ Sua/Nonore υ''NorI big banome η
νiJ, w+. ,Δsha-cl-1)'-,A
-J-Nonrunoj! ”. S+lS CQ width introduction'f;
J Ii 曾Ill :fiU}形I人I1;ノ〉ㆫ冫Jlし、wi. i;i kui1iihm ・1
Tatebutsuji O, + J, ridge] 5-^j1.゛Enter E, and Δ(com τ 轡com key layer 12,130 no νJI1 i
++Easy to hire 1 corpse λχ151. Riff 1, 47th method, josenonone w A'R times uheU》Used for butter 27k 41, ku] Riso 1, Ayr large MJ. ;C is S7
-ノ/Nore C/J L1v Alone Ill So S, His8 Shino L
FtJ, Mu'j i. ll CO in 4+4 (/.1
Izu'i 1 and 1 and 1 and 1 shout j Well, shape!
ge:1 cheap/0a<).
１１Ｅ米、こいよう４ＣスＴノソル（・得妃りＶ）に（
」、弔−１１・岩と冫Ｘζ）ボン！？１１２７Ａトレソ
ス１・を？Ｗ川ｉ ・＼イ１ノノし・弔−１曽衣而を弗
累をざむ力・子Ｕ）カス〕ノフＸマｉ ｌ’Ｕんは四フ
ノｆヒ戻糸（２Ｆ４カスブフカス中１（一棒し、弔−７
．１曽とｌ了６ホン型ソ，４− １−レユ／ヘトを１ｊ
＜イＩＪ 一＼イ午ノクして、二１曽仲１ノｄフォト
レ７ノストノ冑沓ノＶ成すΦ工栓と、該二肋信危フ４ト
Ｌ／ ：／ス１・１曽倉マスク蕗ブＬし、弟二ｊ曽を現
１駅し、４； ｊ曽衣１ｆ｛１俯１戎系ゾラスマ甲（
こｌ’Ｑ’′ｌ，，／ ％ ’４４４一層を現１４シす
る上程よリ７．’ｆｆ ’．．）フォ１・レンス１・ス
フ”ノンルυＪ ）ｐｐ成方ｒｂ．が川いレ）イＬｙ．
＝ｏこ（４，１方法（こ才）いー（瞥；ｇ．．ｌｒｉ’
４カスノ′フＸマ（こよっ′（−処理さイＬ１こ弔−１
冑ソＡ１・レ／Ｘ１・表間の耐１′Ｆ強化１曽Ｃこよっ
て弔一層と・ＡＮ−二１曽υ〕フォｌ゛レンス１゛Ｕ）
冫昆台か１力止さイＬ ％ 一，４，−−ｊ曾レソスｌ
” 与Ｊｌ駅ｈイ０月才ろー＋〜一の珠．Ｘ隻がバざイ
′ＩＣいる。一万この＋Ｉ＋ｔ ？勺二υ虫ｆこｊ冒（
・まｒ紋系グフズマ甲にＩＩψしーＣ１ボ去）４，、必
女ん）ｔｆｒｆ：）。じＪ｛゛４カス処理時間及ひ印加
【冠カイＰ」・ＩＪ刈１しで、耐′１１独１に厄゛Ｕノ
頬反を篩２・′）ζ）と、混什防止及ひ弔一Ｉｖ７ １
呆，１隻がノし乍（こｆ，ｆさイ′Ｌ句が、 こζし倉
１狗ミ去１−もｆこめ（こ（ま酸系ゾラスマ中Ｃこ長時
間１壓す必汝かあり、こイ′ｌがｆこｙ）、毛ｌＬ像さ
イ１，、バクーン化さイＬζこ弟二ｌ曽フ，＃１・レソ
スト層も等方的（こ１函云さイ′ム、フノトマスクーヒ
０）バター７より１１ミ１血Ｑこ転写さイＬたレジスト
パターンが劣化ずぺ》という欠点かあっｆこ。11E rice, Koiyo 4C T nosol (・Tokuhiri V) (
”, Condolence-11・Iwa to Me Xζ) Bon! ? 1127A Tresos 1.? W river i \I 1 no no shi / condolence - 1 so clothes and the power to disturb the accumulation / child U) scum] nofu Condolences and condolences-7
．． 1st and 6th type so, 4- 1-reyu/heto 1j
<IJ 1 \ In the morning, 21 Sonaka 1 d Photore 7 Nost no Katsu no V made Φ plug, and the 2 ribs are safe 4 to L/ :/S 1.1 Sokura mask Fubuki L, his younger brother Nijso is currently 1 station, 4;
This is the 14th step of the 444th layer.7. 'ff'. ．． ) For 1, Lens 1, Suf” Nonru υJ) pp Narikata rb.gakawai Le) I Ly.
=oko(4,1 method(kosai)ii(gl..lri')
4 Casno'fu
Armor A1・Re/X1・Resistance 1′F between the front 1′F reinforced 1′C Therefore, one layer of condolence・AN-21Soυ゛Forence 1゛U)
Stop it with one force L% 1,4,--j Soresosl
” Yo Jl station h i 0 month siro + ~ one pearl.
・Marmon-type Gufusuma Kō IIψshi C1 Bo left) 4,, must have) tfrf:). With the same J{4 dregs processing time and application [Kan Kai P] and IJ cutting 1, it is resistant to 11% and 1%, with sieve 2・')ζ), and prevents contamination. Condolence Iv7 1
Sorry, there is one bottle left. Yes, this is the case), the image of the hair is 1,, the Bakunization is Lζ, the second layer is isotropic, and the Lesost layer is also isotropic (this is the case) The drawback is that the resist pattern does not deteriorate due to the transfer.
この兄明の目的（Ｊ１上ｈ己の欠点を除人せしめたフィ
１・レシスｊ・スアンンルＱ刀ト成方法を提供１−ろ串
］こあ６ｏ
この′Ｊ１；明１こよイＬば弔一／ｔｌとＧζ）ボジ型
ノ，（ト１／ソペ１・を朝イ１１・ベイ＋７グし、弟一
層を弗素を３４１′分子の刀スノ゛ラズマ１こ曝し、弟
二層と１１： ＜）小シ型ノオ１・レソストヲ菫布・ヘ
イ４−ングし−Ｃ二層悄造ノ，＋１・レソス１゛増を形
成７１１−Φ」一程と、該二ＩＩ１２構逍フォトレシス
ト層をマスク露光し弟二層を現像すう工程と、蕗出した
第−１一六聞及び践存１−６弔二層衣而を少ノ，「クと
も酸素分子を言むカスの、異カ性エソナノクタノ来のあ
るプラズマ中でエッナ７グＴる工相と、弔一層を睨１域
）一る工栓をＳむ争を待畝と−！Ｊるフォトレンストス
デ／シルのノレ成万法ｈ１１ｊ｝らイ１，る。The purpose of this brother Ming (J1 upper h to eliminate his own shortcomings and provide a method for forming a sword) 6 o This 'J1; 1 / tl and G : <) Forming a small type No. 1, Resosto, Sumire cloth, Hay 4-Ning -C double layer, +1, Resos 1゛ increase 711-Φ''1, and the 2 II 12 structure photoresist layer. The process of exposing the second layer with a mask and developing the second layer, and the process of exposing the second layer to the second layer, and the second layer of the first layer and the second layer, are slightly different. In the plasma where the sex Esonan Kutano comes, the construction minister who is in the middle of the plasma, and the construction minister who stares at the condolence layer, waits for the battle to Send the first construction plug -! law h11j}rai1,ru.
１ノドこ（／Ｎｌ５明に′−）いて１〆１■を用いて旺
泊１１（こ説明”ｃ）−４）。弔２図＋．ｔこの兄明の
・夷施１夕０てあ命ノ．１・し・，／ストくフ−ノンル
の形１戊万法（Ｑ７’ロセスｔ二１況明復ク）７こぎＮ
′）θ月・イ１間である。1 nodoko (/Nl5 Ming ni'-) and 1〆1■ is used to make Oho 11 (this explanation "c) -4). Funeral 2 figure +.t This brother Akira's Yish 1 evening 0 Life No. 1, Shi..., / Strike Funonle's Form 1 Bomanho (Q7'Roses t21 situation Meifuku) 7 Kogi N
') It is between θ month and i1.
，ノ＋Ｎ４．／ ２１−Ｊ二Ｃこ例Ｌ−１曽とＩ沫く〕
ポシカシフ，ｌトＬ／ソス１・２２少悸４１ｉ・・＼イ
４−ングし、こイ１を弗素を含む）ｊ−−１−カゾラス
マ（４１のブフズマ）中番こ録１−と、衣１１１１に向
ｌｍ剤性の強化さ１１，γこ衣１６１層２：３が形成さ
イｔる。（弟２図（ａＪ ）。この上Ｃこ弟二層と４１
″るポソ型フォ１・レシスト２４を塗布へイキ／クＴる
（弟２図（ｂＪ ）この二層楕遺フォトレソスト層をマ
スク命光し、弟二層に対′Ｎ−る現暉欣中に浸せば、未
途゛各元ＩＩＳ分を残し゜Ｃ，弔一層衣１朗が露出する
（弟２図（ＣＤ。ついで、蕗出した弟−１一衣面即ち耐
性強化表｛１旧曽２３及び残存１−る弟二層レジスト衣
而を少なくとも峡累分千ケ含むガスの、異方性エノナン
ク効果のあるカスプラズマ、レｌｌんば半面平板畦極間
番こ発生させた紳醒系プラズマ中でエッナンクすΦ０異
方１１エツナ／グプロセス｛こおいて＋’ｌｓ酸累イオ
ノＣこよっＣ＋／ジスト１曽は昧去されーＣいくか、除
去（Ｊウェーハ而（こ垂直な方向１このみノ焦付する。, ノ+N4. / 21-J2C Example L-1 So and I]
Posikashif, lto L/Sosu 1.22 Shoyu 41i... \I 4-ng, including fluorine) A 2:3 layer of γ coat 161 is formed in 1111 to enhance lm-tropic properties. (Little brother 2 figure (aJ). This is the second layer of C and 41
Apply the photoresist 24 of the photoresist type 24. If you soak it in, the unexplored parts of each original IIS will be left behind, and the funeral layer 1 will be exposed. 23 and the remaining two-layer resist coating of gas containing at least 1,000 volumes of gas, a gas plasma with an anisotropic enonanck effect, a half-flat, ridge-pole interpolation system. In the plasma, the Φ0 anisotropic 11 etsuna/g process {here +'ls acid accumulation iono C+/dist 1 is removed - C or removed (J wafer (this perpendicular direction 1 I'm focused on this.
弟２図（ｄ） ｆこおけ心点線によって示さイ′１，６
都分かこのプロセスＣこおいて１尿去さイ１，たソオ１
・レジスト部分で汐）る。この』易会エンナンクは横方
向Ｃこ進付しｆｆい０）で、フォトマスクより第二υ）
ノＡトレシスト層に転写さイＬたバク一ン（まそのま蒙
、残存する。Younger brother figure 2 (d)
The process C of the city is 1 urine is removed 1, it is 1
・It sways in the resist area. This ``encounter'' has a lateral direction of 0), and the second υ) from the photomask.
The traces transferred to the trace layer remain.
表［川の１１１０注Ｉｉ！ｌｔ化層の１ボ去さイ１，た
弟一υ）フォトレノストＩ￥！Ｉを机泳’Ｊ− １’Ｌ
ば、第２図（ｅ） ｉこ示″りよつに、基板而が露出■
る。一）いて通常の１Ｆイ１・工，ナンク［［程、即ぢ
請−Ｉ曽のフλ１・レンストと弟二層のフ，Ｉ１・レジ
ス１・の未蕗元都分に対ダ−る的解連度ｒｌ，ｒ２の比
ｒ ＋／１２かｌ以上でめζ）ような工，ナンク液に浸
潤せしｙ）る，１一札船こより弔２１図（ｆＪ ｌこ冫
］くさイー１，るよつなきのこ型の１り［面を有１−６
ステンンルが侍らイ１，ク）。Table [River 1110 Note Ii! 1 of the LT layer left 1, my younger brother 1) Photorenost I ¥! Table swimming I'J-1'L
As shown in Figure 2(e), the substrate is exposed.
Ru. 1) Normal 1F I1 Engineering, Nanku Ratio rl, r2 of R + / 12 or more is recommended. 1, Mushroom-shaped 1 [with sides 1-6]
Stennur was a samurai (I1, K).
弔− ，弟二のフメトレシストの柚類及び映厚、弟−
．弟二のゾラスマの橿々、サイドエンナノクの１こめの
工，チノク欣４ｆ’汀、侍《）べきノオトレジス１・ス
テンンルの１史用目ｌ′９（こ比、しＣ１形状バフメー
タ０》大きさ及び鞘展、プロセスに石ける耐性寺endpa
ge:2
につき、１夕［期の性能を調ｆこすように、選択す６必
巽がある。−レリとして、弟一，弟二のフォトレソスト
として商品名ＡＺ１３７０，ＡＺ２４１５，弟−のプラ
ズマとして純四フ，化炭累ガスプラズマ，第二のプラズ
マとして純取累プラズマ、サイ１・゛エンナングのため
のエツナンク液として商品名ＡＺ２４０１を適当な量の
水で稀釈したも０）を用いく）事７１４できる。また弟
一〇）フォ１・レジス１・として用い６面品名ＡＺｌ３
７０に対して柑いりれ６商品名ＡＺＤｅｖｅ−１ｏｐｅ
ｒを適当７．１′墓の水で袖釈して得られ／：）机ｆ象
紗もｒｓ／ｒ２＞ｌｒｌる采件をみたすのでサイドエ，
チンダ液として用い６事ができる。ＣＯＪ場合は弟一層
の埃１駅にひきつつき、同一の液（こよってザイト′エ
ッチを行イつせる事ができる。Condolences - , younger brother, Yuzu and Eiatsu, younger brother -
．． My younger brother Zoramasma's relatives, Side Ennanok's 1st work, Chinokukin 4f', Samurai《) Nootregis 1 Stennru's 1st history l'9 (this ratio, ShiC1 shape buff meter 0》large) Sheath and sheath exhibition, process-resistant temple endpa
For each ge:2, there are 6 necessary functions to choose from to adjust the performance of the period. - As Reli, younger brother 1 and younger brother 2's photoresist product name AZ1370, AZ2415, younger brother's plasma as pure 4F, carbonized gas plasma, second plasma as pure tori accumulation plasma, Sai 1. AZ2401 (trade name) diluted with an appropriate amount of water can be used as Etnanck's liquid. Also used as younger brother 10) Fo 1, Regis 1, 6-sided product name AZl3
70 to 6 kanjiri product name AZDeve-1ope
It can be obtained by dissecting r with appropriate 7.1' grave water/:) Since the machine f elephant also satisfies the condition rs/r2>lrl, side e,
It can be used as chinda liquid for 6 purposes. In the case of COJ, it is possible to stick to one layer of dust and etch the same liquid (thus, the same liquid).
以上述べたようｌここの発明をこまって提供されるフォ
トレジストスアンシルの形成方欣におい゛Ｃ（ま、耐性
冑化膿の除去が、異方性エンチング効果のあるｒ波素分
子を′バむガスプラズマによってなさＨ−Ｌるため、ｌ
スクよＱ｝転写された、弟二のフォ１・レジストのパタ
ーンＱノ劣化の恐れがない。従って、弟一層フォ１・レ
ジスト表面に形成１−’ ６耐性強化増を、レジストの
混合防止、現１ｓ！時の弟一層レシスト層保護を光全な
らしめるべく、充分強度の踵いものとしても、パターン
の形状劣化という擬性を払う事なく谷易に除々する事が
できる。リフトオフ床Ｃこ用いらｒ＋． ＝フォ１・レ
ジストステンシルＱ）形成ｌこ用いられて、ての効果は
大であΦ０As mentioned above, in the method of forming the photoresist ancil provided by the present invention, the removal of the resistant anti-fouling impairs the r-wave element molecules that have an anisotropic etching effect. Since H-L is produced by gas plasma, l
There is no risk of deterioration of the transferred pattern Q of the photo 1 resist of younger brother 2. Therefore, the younger brother is formed on the surface of the resist 1-' 6 to increase resistance, prevent mixing of the resist, and the current 1s! In order to fully protect the resist layer, even if it is sufficiently strong, it can be easily removed without causing any deterioration in the shape of the pattern. Lift-off floor C this r+. = Formation of photo resist stencil Q)
ｉｌｌ図Ｃａ） ， （ｂＪ ， ＣＣ）はフォ１・レ
シストステノソルの形状パラメータ及ひリフ１・Ａ−フ
ｆｆｉｔこよ６バクーニング／ａ：説明する１こめの図
而である。図において，ｌｌはフォトレジスト、１２．
１３は博暎層、１４は開孔都を示Ｔｏ
弔２図Ｃａ）−（ｆＪ Ｇまこ（／ｊ発明Ｑ戸一実施ν
りであるフメトレジストスアンシルの形成ブ【コセスを
祝明するｆこめの凶向である。
図において２１ｉ；ｌ茫板、２２，２４１Ｃホシ型ンメ
１・レジスト、２３は耐性強化ざ（ムた衣而鳩を示Ｔ０
１（浦ＬＡ 弁理士内原 晋
endpage:3Figures Ca) and (bJ, CC) are the first diagrams to explain the shape parameters of the photoresist stenosol and the shape parameters of the photoresist stenosol. In the figure, ll is photoresist, 12.
13 indicates the Boae layer, and 14 indicates the open hole capital.
The formation of the Fumetresist Ancil, which is the most important, is the atrocities of the F-common celebrating the Cocess. In the figure, 21i; 1 plate, 22, 241C star type resist, 23 indicates resistance-enhancing treatment.
1 (Ura LA patent attorney Susumu Uchiharaendpage:3
Claims (1)
ｊ７，ｉ４１ｊ・・＼イキノク踵弟一層を弗素を・貧打
分子のカスヅフズマ（こ厖、シ、弟二１冑と１，ｊるホ
ジ型ノ詞ト１／ソストを＋ノ’５− ４１ｉ・−＼イＡ
〜ンクしで二１曽イ拘ｊ肖ノオトＬ一ノベト１−を形成
丁《）上程と、訊一層何逍ノ２１−レ／ス１゛１１Ｊク
ｌ−マスク蕗ｙＣシ弔二ｊ曽を現１１ヂベ）工１１１と
、蕗出した弔−盾衣聞及び残存する弟王智衣１『１を少
ｌ，「＜とも故系分子を冨むカス（ｔ〕、異方１土エノ
サノク幼未（・′）あ＜′．）ヅフスマ中でエツナノク
づる工４呈と、弔一虐そ現像１−る」二佃を宮（閂↓俯
符似と′ｙ−４，フ，− １・レソス：〜スア・シル（
／ ｌ 形１＆ 方’１１ ｏ・5 {also -ry and 7, jruhoji type noun ト1/sost wo +ノ'5- 41i・-\iA
~In order to form a novel 1 in the 21st edition of the book, I have written a novel 1. The present 11th generation) Engineering 111, and the mourning that came out - Dun Yiwen and the remaining younger brother Wang Chiyi 1 '1 is a little l, '< is also a scum (t) rich in elements of the deceased system, anisotropic 1 earthenosanok. Yomi(・')a<'.) In the middle of the tsufusuma, Etsunanokuzuruko 4 presentations, and the development of the funeral 1-ru.・Resos: ~Sua Shiru (
/ l Shape 1 & Shape '11 o
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2711882A JPS58145128A (en) | 1982-02-22 | 1982-02-22 | Formation of photo resist stencil |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2711882A JPS58145128A (en) | 1982-02-22 | 1982-02-22 | Formation of photo resist stencil |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58145128A true JPS58145128A (en) | 1983-08-29 |
Family
ID=12212143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2711882A Pending JPS58145128A (en) | 1982-02-22 | 1982-02-22 | Formation of photo resist stencil |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58145128A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5643729A (en) * | 1979-09-18 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Formation of fine pattern |
| JPS5691434A (en) * | 1979-12-26 | 1981-07-24 | Fujitsu Ltd | Method for forming pattern of deposited film by lift-off method |
| JPH0239090A (en) * | 1988-07-28 | 1990-02-08 | Canon Inc | Multicolor image display |
-
1982
- 1982-02-22 JP JP2711882A patent/JPS58145128A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5643729A (en) * | 1979-09-18 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Formation of fine pattern |
| JPS5691434A (en) * | 1979-12-26 | 1981-07-24 | Fujitsu Ltd | Method for forming pattern of deposited film by lift-off method |
| JPH0239090A (en) * | 1988-07-28 | 1990-02-08 | Canon Inc | Multicolor image display |
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