JPS56165324A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS56165324A
JPS56165324A JP5410881A JP5410881A JPS56165324A JP S56165324 A JPS56165324 A JP S56165324A JP 5410881 A JP5410881 A JP 5410881A JP 5410881 A JP5410881 A JP 5410881A JP S56165324 A JPS56165324 A JP S56165324A
Authority
JP
Japan
Prior art keywords
recess
pattern
proper
photoresist layer
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5410881A
Other languages
Japanese (ja)
Other versions
JPS5914892B2 (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP56054108A priority Critical patent/JPS5914892B2/en
Publication of JPS56165324A publication Critical patent/JPS56165324A/en
Publication of JPS5914892B2 publication Critical patent/JPS5914892B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To form patterns different from that of a photomask is designed by a method wherein a workpiece surface provided with a recess is covered with a photoresist layer, thick in the recess and thin on the other part, and is exposed to light, with an exposure less than proper on the recess and more than proper on the other part, with a traveling pattern creating different results from those expected for the mask. CONSTITUTION:The surface 2 of a workpiece 1 made of Si, etc., is provided with a recess and the photoresist layer 3 is thick in the recess and thin over the other part. Because the exposure effect of the light 7 depends upon the thickness of the photoresist layer, the effect on the recess is less than proper and more than proper on the other part. Therefore, the region 13 exposed less remains constituting a selected pattern when the developing process is completed. Thus, a difference in photoresist layer thickness results in a pattern different from other pattern such as photomask.
JP56054108A 1981-04-09 1981-04-09 Pattern formation method Expired JPS5914892B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56054108A JPS5914892B2 (en) 1981-04-09 1981-04-09 Pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56054108A JPS5914892B2 (en) 1981-04-09 1981-04-09 Pattern formation method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12426676A Division JPS5348676A (en) 1976-10-15 1976-10-15 Method of forming pattern

Publications (2)

Publication Number Publication Date
JPS56165324A true JPS56165324A (en) 1981-12-18
JPS5914892B2 JPS5914892B2 (en) 1984-04-06

Family

ID=12961401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56054108A Expired JPS5914892B2 (en) 1981-04-09 1981-04-09 Pattern formation method

Country Status (1)

Country Link
JP (1) JPS5914892B2 (en)

Also Published As

Publication number Publication date
JPS5914892B2 (en) 1984-04-06

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