JPS5568626A - Pattern formation - Google Patents

Pattern formation

Info

Publication number
JPS5568626A
JPS5568626A JP14120778A JP14120778A JPS5568626A JP S5568626 A JPS5568626 A JP S5568626A JP 14120778 A JP14120778 A JP 14120778A JP 14120778 A JP14120778 A JP 14120778A JP S5568626 A JPS5568626 A JP S5568626A
Authority
JP
Japan
Prior art keywords
film
electron beam
pattern
scattering
accuracy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14120778A
Other languages
Japanese (ja)
Inventor
Hisaaki Aizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP14120778A priority Critical patent/JPS5568626A/en
Publication of JPS5568626A publication Critical patent/JPS5568626A/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To achieve a high-accurate fine patterning through a decreased proximity- effect in an electron beam exposure by forming a resist film on a pattern-forming surface through an interposed scattering-inhibiting film.
CONSTITUTION: A silicon oxide film 2 is formed on a silicon substrate 1. The silicon oxide film 2 is coated with a scattering-inhibiting film 3 which has no sensitivity to electron beam nor solubility to a specified developing solution. Furthermore, the film 3 consists of a material from which impinging electrons are given a smaller average scattering angle than that given from the silicon oxide film 2. On the film 3, an electron beam-sensitive resist film 4 is formed by coating. Then, an electron beam exposure is used to form a pattern drawing on the film 4, which is then developed in a specific developing solution. This produces a high-accuracy resist film pattern 4'. Using the pattern 4' as a mask, the film 3 is selectively removed, thereby providing a high-accuracy patterned scattering-inhibiting film 3'. Next, using the patterns 4' and 3' as masks, the film 2 is selectively removed so that a high-accuracy patterned oxide film 2' can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP14120778A 1978-11-17 1978-11-17 Pattern formation Pending JPS5568626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14120778A JPS5568626A (en) 1978-11-17 1978-11-17 Pattern formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14120778A JPS5568626A (en) 1978-11-17 1978-11-17 Pattern formation

Publications (1)

Publication Number Publication Date
JPS5568626A true JPS5568626A (en) 1980-05-23

Family

ID=15286627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14120778A Pending JPS5568626A (en) 1978-11-17 1978-11-17 Pattern formation

Country Status (1)

Country Link
JP (1) JPS5568626A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140120A (en) * 1982-02-16 1983-08-19 Sanyo Electric Co Ltd Pattern formation
EP1457979A2 (en) * 2003-02-28 2004-09-15 Pioneer Corporation Electron beam recording substrate
WO2005114332A1 (en) * 2004-05-21 2005-12-01 Pioneer Corporation Electronic beam recording board

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50113171A (en) * 1974-02-13 1975-09-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50113171A (en) * 1974-02-13 1975-09-05

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140120A (en) * 1982-02-16 1983-08-19 Sanyo Electric Co Ltd Pattern formation
EP1457979A2 (en) * 2003-02-28 2004-09-15 Pioneer Corporation Electron beam recording substrate
EP1457979A3 (en) * 2003-02-28 2007-05-09 Pioneer Corporation Electron beam recording substrate
WO2005114332A1 (en) * 2004-05-21 2005-12-01 Pioneer Corporation Electronic beam recording board

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