JPS5676583A - Semiconductor device and method of fabricating same - Google Patents

Semiconductor device and method of fabricating same

Info

Publication number
JPS5676583A
JPS5676583A JP15477080A JP15477080A JPS5676583A JP S5676583 A JPS5676583 A JP S5676583A JP 15477080 A JP15477080 A JP 15477080A JP 15477080 A JP15477080 A JP 15477080A JP S5676583 A JPS5676583 A JP S5676583A
Authority
JP
Japan
Prior art keywords
semiconductor device
fabricating same
fabricating
same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15477080A
Other languages
English (en)
Japanese (ja)
Inventor
Bokoojibo Dominiku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5676583A publication Critical patent/JPS5676583A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895Local interconnects; Local pads, as exemplified by patent document EP0896365
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/764Air gaps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814Diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
JP15477080A 1979-11-07 1980-11-05 Semiconductor device and method of fabricating same Pending JPS5676583A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7927480A FR2469804A1 (fr) 1979-11-07 1979-11-07 Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant

Publications (1)

Publication Number Publication Date
JPS5676583A true JPS5676583A (en) 1981-06-24

Family

ID=9231399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15477080A Pending JPS5676583A (en) 1979-11-07 1980-11-05 Semiconductor device and method of fabricating same

Country Status (6)

Country Link
JP (1) JPS5676583A (fr)
CA (1) CA1165009A (fr)
DE (1) DE3041232A1 (fr)
FR (1) FR2469804A1 (fr)
GB (1) GB2062961A (fr)
NL (1) NL8006019A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138385A (ja) * 1983-01-28 1984-08-08 Sanyo Electric Co Ltd シヨツトキバリヤダイオ−ド装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007142603A1 (fr) * 2006-06-09 2007-12-13 Agency For Science, Technology And Research Masque perforé intégré et son procédé de fabrication

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5439582A (en) * 1977-09-02 1979-03-27 Nec Corp Integrated composite diode device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1244759A (en) * 1968-12-11 1971-09-02 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices
DE2001468A1 (de) * 1970-01-14 1971-07-22 Philips Nv Verfahren zur Herstellung von Halbleiterbauelementen
DE2106540A1 (de) * 1970-02-13 1971-08-19 Texas Instruments Inc Halbleiterschaltung und Verfahren zu ihrer Herstellung
FR2335957A1 (fr) * 1975-12-17 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur monolithique comprenant un pont de redressement
FR2363896A2 (fr) * 1976-09-01 1978-03-31 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant un pont de redressement

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5439582A (en) * 1977-09-02 1979-03-27 Nec Corp Integrated composite diode device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59138385A (ja) * 1983-01-28 1984-08-08 Sanyo Electric Co Ltd シヨツトキバリヤダイオ−ド装置

Also Published As

Publication number Publication date
CA1165009A (fr) 1984-04-03
FR2469804B1 (fr) 1983-04-29
NL8006019A (nl) 1981-06-01
GB2062961A (en) 1981-05-28
FR2469804A1 (fr) 1981-05-22
DE3041232A1 (de) 1981-05-14

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