FR2335957A1 - Dispositif semiconducteur monolithique comprenant un pont de redressement - Google Patents

Dispositif semiconducteur monolithique comprenant un pont de redressement

Info

Publication number
FR2335957A1
FR2335957A1 FR7538584A FR7538584A FR2335957A1 FR 2335957 A1 FR2335957 A1 FR 2335957A1 FR 7538584 A FR7538584 A FR 7538584A FR 7538584 A FR7538584 A FR 7538584A FR 2335957 A1 FR2335957 A1 FR 2335957A1
Authority
FR
France
Prior art keywords
substrate
junction
rectifier bridge
same silicon
monolithic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7538584A
Other languages
English (en)
Other versions
FR2335957B1 (fr
Inventor
Maurice Bonis
Bernard Roger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7538584A priority Critical patent/FR2335957A1/fr
Publication of FR2335957A1 publication Critical patent/FR2335957A1/fr
Application granted granted Critical
Publication of FR2335957B1 publication Critical patent/FR2335957B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7538584A 1975-12-17 1975-12-17 Dispositif semiconducteur monolithique comprenant un pont de redressement Granted FR2335957A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7538584A FR2335957A1 (fr) 1975-12-17 1975-12-17 Dispositif semiconducteur monolithique comprenant un pont de redressement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7538584A FR2335957A1 (fr) 1975-12-17 1975-12-17 Dispositif semiconducteur monolithique comprenant un pont de redressement

Publications (2)

Publication Number Publication Date
FR2335957A1 true FR2335957A1 (fr) 1977-07-15
FR2335957B1 FR2335957B1 (fr) 1980-03-28

Family

ID=9163829

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7538584A Granted FR2335957A1 (fr) 1975-12-17 1975-12-17 Dispositif semiconducteur monolithique comprenant un pont de redressement

Country Status (1)

Country Link
FR (1) FR2335957A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2854995A1 (de) * 1977-12-30 1979-07-05 Philips Nv Integrierte darlington-schaltung
DE3003911A1 (de) * 1979-02-14 1980-08-21 Philips Nv Halbleiteranordnung
FR2469804A1 (fr) * 1979-11-07 1981-05-22 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant
DE3044444A1 (de) * 1980-11-26 1982-06-16 Deutsche Itt Industries Gmbh, 7800 Freiburg "monolithisch integrierte gleichrichter-brueckenschaltung"
EP0603973A2 (fr) * 1992-12-23 1994-06-29 Koninklijke Philips Electronics N.V. Composant semi-conducteur ayant des jonctions p-n séparées par des tranchées et son procédé de fabrication
FR2729008A1 (fr) * 1994-12-30 1996-07-05 Sgs Thomson Microelectronics Circuit integre de puissance
US6411155B2 (en) 1994-12-30 2002-06-25 Sgs-Thomson Microelectronics S.A. Power integrated circuit

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2854995A1 (de) * 1977-12-30 1979-07-05 Philips Nv Integrierte darlington-schaltung
DE3003911A1 (de) * 1979-02-14 1980-08-21 Philips Nv Halbleiteranordnung
FR2469804A1 (fr) * 1979-11-07 1981-05-22 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant
DE3044444A1 (de) * 1980-11-26 1982-06-16 Deutsche Itt Industries Gmbh, 7800 Freiburg "monolithisch integrierte gleichrichter-brueckenschaltung"
EP0603973A2 (fr) * 1992-12-23 1994-06-29 Koninklijke Philips Electronics N.V. Composant semi-conducteur ayant des jonctions p-n séparées par des tranchées et son procédé de fabrication
EP0603973A3 (fr) * 1992-12-23 1995-06-28 Philips Electronics Nv Composant semi-conducteur ayant des jonctions p-n séparées par des tranchées et son procédé de fabrication.
FR2729008A1 (fr) * 1994-12-30 1996-07-05 Sgs Thomson Microelectronics Circuit integre de puissance
EP0721218A1 (fr) * 1994-12-30 1996-07-10 STMicroelectronics S.A. Circuit intégré de puissance
US6017778A (en) * 1994-12-30 2000-01-25 Sgs-Thomson Microelectronics S.A. Method for making power integrated circuit
US6075277A (en) * 1994-12-30 2000-06-13 Sgs-Thomas Microelectronics S.A. Power integrated circuit
US6411155B2 (en) 1994-12-30 2002-06-25 Sgs-Thomson Microelectronics S.A. Power integrated circuit
US6580142B1 (en) 1994-12-30 2003-06-17 Sgs-Thomson Microelectronics S.A. Electrical control methods involving semiconductor components

Also Published As

Publication number Publication date
FR2335957B1 (fr) 1980-03-28

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Legal Events

Date Code Title Description
ST Notification of lapse