GB1244759A - Improvements in and relating to methods of manufacturing semiconductor devices - Google Patents

Improvements in and relating to methods of manufacturing semiconductor devices

Info

Publication number
GB1244759A
GB1244759A GB5882868A GB5882868A GB1244759A GB 1244759 A GB1244759 A GB 1244759A GB 5882868 A GB5882868 A GB 5882868A GB 5882868 A GB5882868 A GB 5882868A GB 1244759 A GB1244759 A GB 1244759A
Authority
GB
United Kingdom
Prior art keywords
semi
groove
etching
plug
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5882868A
Inventor
Maurice Greenlick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASSOCIATED SEMICONDUCTOR MFT
Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASSOCIATED SEMICONDUCTOR MFT filed Critical ASSOCIATED SEMICONDUCTOR MFT
Priority to GB5882868A priority Critical patent/GB1244759A/en
Priority to NL6918363A priority patent/NL6918363A/xx
Priority to BE742883D priority patent/BE742883A/xx
Priority to FR6942894A priority patent/FR2025892A1/fr
Publication of GB1244759A publication Critical patent/GB1244759A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5221—Crossover interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

1,244,759. Semi-conductor devices. ASSOCIATED SEMICONDUCTOR MFRS. Ltd. 11 Dec., 1968, No. 58828/68. Heading H1K. A method of interconnecting two devices T 1 and T 2 , in an integrated circuit, which are mutually isolated by a groove 6, comprises providing a conductive metal bridge 19 over the groove. The steps of forming the bridge comprise providing a plug of material at the surface of the semi-conductor body between the two devices T 1 and T 2 , forming a conductive metal layer between the electrodes 15 and 33 of the two devices, removing the plug by etching so that the surface of the semi-conductor body underlying the conductive metal layer is exposed, and etching a groove 6 into the semi-conductor body to isolate the two devices. An insulating layer of silicon oxide, silicon nitride, silicon carbide or aluminium oxide is provided on the surface of the semi-conductor body which may be of silicon, germanium or gallium arsenide, and serves as a mask during processing. The plug is of aluminium and is removed by etching with hot sulphuric acid. The electrodes 12, 13, 15, 32, 33 and 35 are of aluminium coated with titanium which itself is coated with gold, the gold layer later being thickened by electroplating. The plug may alternatively be of copper and the interconnections of molybdenum, nickel, platinum or silver. After the removal of the plug, the groove 6 is formed by etching the semi-conductor body with hydrazine and water in equal molecular ratio, the body having been so arranged that the groove orientation is parallel to the intersection of the <111> crystal planes with the body surface parallel to the <100> crystal plane so that the etching wil result in a groove of V-shape cross-section.
GB5882868A 1968-12-11 1968-12-11 Improvements in and relating to methods of manufacturing semiconductor devices Expired GB1244759A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB5882868A GB1244759A (en) 1968-12-11 1968-12-11 Improvements in and relating to methods of manufacturing semiconductor devices
NL6918363A NL6918363A (en) 1968-12-11 1969-12-06
BE742883D BE742883A (en) 1968-12-11 1969-12-09
FR6942894A FR2025892A1 (en) 1968-12-11 1969-12-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5882868A GB1244759A (en) 1968-12-11 1968-12-11 Improvements in and relating to methods of manufacturing semiconductor devices

Publications (1)

Publication Number Publication Date
GB1244759A true GB1244759A (en) 1971-09-02

Family

ID=10482499

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5882868A Expired GB1244759A (en) 1968-12-11 1968-12-11 Improvements in and relating to methods of manufacturing semiconductor devices

Country Status (4)

Country Link
BE (1) BE742883A (en)
FR (1) FR2025892A1 (en)
GB (1) GB1244759A (en)
NL (1) NL6918363A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455448A (en) * 1992-09-03 1995-10-03 Sgs-Thomson Microelectronics, Inc. Bipolar, monolithic, high-power RF transistor with isolated top collector

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2106540A1 (en) * 1970-02-13 1971-08-19 Texas Instruments Inc Semiconductor circuits and processes for their manufacture
FR2469804A1 (en) * 1979-11-07 1981-05-22 Labo Electronique Physique METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE INCLUDING A DIODES ASSEMBLY IN SERIES AND DEVICE RESULTING THEREFROM

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455448A (en) * 1992-09-03 1995-10-03 Sgs-Thomson Microelectronics, Inc. Bipolar, monolithic, high-power RF transistor with isolated top collector

Also Published As

Publication number Publication date
NL6918363A (en) 1970-06-15
FR2025892A1 (en) 1970-09-11
BE742883A (en) 1970-06-09

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