NL8006019A - Halfgeleiderinrichting omvattende een aantal in serie geschakelde dioden, en werkwijze ter vervaardiging daarvan. - Google Patents

Halfgeleiderinrichting omvattende een aantal in serie geschakelde dioden, en werkwijze ter vervaardiging daarvan. Download PDF

Info

Publication number: NL8006019A
Authority: NL; Netherlands
Prior art keywords: region; layer; electrode; semiconductor; highly doped
Prior art date: 1979-11-07

Application number

NL8006019A

Other languages

English (en)

Dutch (nl)

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-11-07

Filing date

1980-11-04

Publication date

1981-06-01

1980-11-04 Application filed by Philips Nv filed Critical Philips Nv

1981-06-01 Publication of NL8006019A publication Critical patent/NL8006019A/nl

Links

239000004065 semiconductor Substances 0.000 title claims description 45
238000004519 manufacturing process Methods 0.000 title claims description 10
238000000034 method Methods 0.000 title claims description 8
229910052751 metal Inorganic materials 0.000 claims description 23
239000002184 metal Substances 0.000 claims description 23
239000000758 substrate Substances 0.000 claims description 22
238000005530 etching Methods 0.000 claims description 12
239000000463 material Substances 0.000 claims description 11
239000004020 conductor Substances 0.000 claims description 7
230000007704 transition Effects 0.000 claims description 6
238000000151 deposition Methods 0.000 claims description 2
239000011810 insulating material Substances 0.000 claims 1
238000001816 cooling Methods 0.000 description 8
229920002120 photoresistant polymer Polymers 0.000 description 5
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
229910001218 Gallium arsenide Inorganic materials 0.000 description 4
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
230000000873 masking effect Effects 0.000 description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
239000010931 gold Substances 0.000 description 2
229910052737 gold Inorganic materials 0.000 description 2
239000004922 lacquer Substances 0.000 description 2
239000002904 solvent Substances 0.000 description 2
FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
VYRNMWDESIRGOS-UHFFFAOYSA-N [Mo].[Au] Chemical compound [Mo].[Au] VYRNMWDESIRGOS-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
210000001072 colon Anatomy 0.000 description 1
239000003989 dielectric material Substances 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
238000010292 electrical insulation Methods 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
230000017525 heat dissipation Effects 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
239000007788 liquid Substances 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
239000000203 mixture Substances 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
239000012808 vapor phase Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
Electrodes Of Semiconductors (AREA)

NL8006019A 1979-11-07 1980-11-04 Halfgeleiderinrichting omvattende een aantal in serie geschakelde dioden, en werkwijze ter vervaardiging daarvan. NL8006019A (nl)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
FR7927480A FR2469804A1 (fr)	1979-11-07	1979-11-07	Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant
FR7927480		1979-11-07

Publications (1)

Publication Number	Publication Date
NL8006019A true NL8006019A (nl)	1981-06-01

Family

ID=9231399

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8006019A NL8006019A (nl)	1979-11-07	1980-11-04	Halfgeleiderinrichting omvattende een aantal in serie geschakelde dioden, en werkwijze ter vervaardiging daarvan.

Country Status (6)

Country	Link
JP (1)	JPS5676583A (fr)
CA (1)	CA1165009A (fr)
DE (1)	DE3041232A1 (fr)
FR (1)	FR2469804A1 (fr)
GB (1)	GB2062961A (fr)
NL (1)	NL8006019A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH07107940B2 (ja) *	1983-01-28	1995-11-15	三洋電機株式会社	シヨツトキバリヤダイオ−ド装置
WO2007142603A1 (fr) *	2006-06-09	2007-12-13	Agency For Science, Technology And Research	Masque perforé intégré et son procédé de fabrication

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1244759A (en) *	1968-12-11	1971-09-02	Associated Semiconductor Mft	Improvements in and relating to methods of manufacturing semiconductor devices
DE2001468A1 (de) *	1970-01-14	1971-07-22	Philips Nv	Verfahren zur Herstellung von Halbleiterbauelementen
DE2106540A1 (de) *	1970-02-13	1971-08-19	Texas Instruments Inc	Halbleiterschaltung und Verfahren zu ihrer Herstellung
FR2335957A1 (fr) *	1975-12-17	1977-07-15	Radiotechnique Compelec	Dispositif semiconducteur monolithique comprenant un pont de redressement
FR2363896A2 (fr) *	1976-09-01	1978-03-31	Radiotechnique Compelec	Dispositif semi-conducteur monolithique comprenant un pont de redressement
JPS5439582A (en) *	1977-09-02	1979-03-27	Nec Corp	Integrated composite diode device

1979
- 1979-11-07 FR FR7927480A patent/FR2469804A1/fr active Granted
1980
- 1980-10-30 CA CA000363613A patent/CA1165009A/fr not_active Expired
- 1980-11-03 GB GB8035263A patent/GB2062961A/en not_active Withdrawn
- 1980-11-03 DE DE19803041232 patent/DE3041232A1/de not_active Withdrawn
- 1980-11-04 NL NL8006019A patent/NL8006019A/nl not_active Application Discontinuation
- 1980-11-05 JP JP15477080A patent/JPS5676583A/ja active Pending

Also Published As

Publication number	Publication date
CA1165009A (fr)	1984-04-03
FR2469804B1 (fr)	1983-04-29
JPS5676583A (en)	1981-06-24
GB2062961A (en)	1981-05-28
FR2469804A1 (fr)	1981-05-22
DE3041232A1 (de)	1981-05-14

Legal Events

Date	Code	Title
1981-06-01	A1A	A request for search or an international-type search has been filed
1983-05-02	BB	A search report has been drawn up
1985-01-01	A85	Still pending on 85-01-01
1986-07-01	BV	The patent application has lapsed

Publication	Publication Date	Title
US3932226A (en)	1976-01-13	Method of electrically interconnecting semiconductor elements
US4536469A (en)	1985-08-20	Semiconductor structures and manufacturing methods
US3602982A (en)	1971-09-07	Method of manufacturing a semiconductor device and device manufactured by said method
US4789647A (en)	1988-12-06	Method of manufacturing a semiconductor device, in which a metallization with a thick connection electrode is provided on a semiconductor body
US3993515A (en)	1976-11-23	Method of forming raised electrical contacts on a semiconductor device
US5458735A (en)	1995-10-17	Process for the production of electroluminescent silicon structures
US6727167B2 (en)	2004-04-27	Method of making an aligned electrode on a semiconductor structure
US4078963A (en)	1978-03-14	Method of manufacturing a semiconductor device, having a pattern of conductors on a supporting body
US4344223A (en)	1982-08-17	Monolithic hybrid integrated circuits
US3616348A (en)	1971-10-26	Process for isolating semiconductor elements
US4596070A (en)	1986-06-24	Interdigitated IMPATT devices
US4381341A (en)	1983-04-26	Two stage etching process for through the substrate contacts
US4160992A (en)	1979-07-10	Plural semiconductor devices mounted between plural heat sinks
US4692791A (en)	1987-09-08	Monolithic IMPATT with stripline leads
US4596069A (en)	1986-06-24	Three dimensional processing for monolithic IMPATTs
NL8006019A (nl)	1981-06-01	Halfgeleiderinrichting omvattende een aantal in serie geschakelde dioden, en werkwijze ter vervaardiging daarvan.
US4035830A (en)	1977-07-12	Composite semiconductor circuit and method of manufacture
US6262442B1 (en)	2001-07-17	Zener diode and RC network combination semiconductor device for use in integrated circuits
GB2167897A (en)	1986-06-04	Semiconductor manufacturing methods
US3836446A (en)	1974-09-17	Semiconductor devices manufacture
US3631307A (en)	1971-12-28	Semiconductor structures having improved high-frequency response and power dissipation capabilities
US5144413A (en)	1992-09-01	Semiconductor structures and manufacturing methods
US3956820A (en)	1976-05-18	Method of manufacturing a semiconductor device having a lead bonded to a surface thereof
US4023258A (en)	1977-05-17	Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
US3684901A (en)	1972-08-15	High frequency diode energy transducer and method of manufacture