JPS5650514A - Formation of fine pattern - Google Patents
Formation of fine patternInfo
- Publication number
- JPS5650514A JPS5650514A JP12754079A JP12754079A JPS5650514A JP S5650514 A JPS5650514 A JP S5650514A JP 12754079 A JP12754079 A JP 12754079A JP 12754079 A JP12754079 A JP 12754079A JP S5650514 A JPS5650514 A JP S5650514A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- layers
- polycrystalline silicon
- fine pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Abstract
PURPOSE:To simplify the formation of a pattern by a method wherein ions are implanted in accordance with a prescribed pattern in the surface layer parts of a film to be processed being formed on the surface of a substrate or of a film on the substrate to form quality changed layers, and the film to be processed is etched using the layers as masks. CONSTITUTION:After a silicon oxide film 2 and a polycrystalline silicon film 3 are stacked in order on a silicon semiconductor substrate 1, ions of oxygen, etc., are implanted in the surface layer of the polycrystalline silicon film to form locally quality changed layers 8. Using the quality changed layers 8 as masks, plasma etching is performed in CF4 gas plasma 6, for example, to form a fine pattern of polycrystalline silicon. Accordingly, because the fine pattern can be formed directly without necessitating a photo-etching process, the manufacturing process is shortened and the defect of pattern generating by the adhesion of foreign material and refuse can be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12754079A JPS5650514A (en) | 1979-10-01 | 1979-10-01 | Formation of fine pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12754079A JPS5650514A (en) | 1979-10-01 | 1979-10-01 | Formation of fine pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5650514A true JPS5650514A (en) | 1981-05-07 |
Family
ID=14962531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12754079A Pending JPS5650514A (en) | 1979-10-01 | 1979-10-01 | Formation of fine pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5650514A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57117239A (en) * | 1981-01-12 | 1982-07-21 | Toshiba Corp | Forming method for polycrystal silicon pattern |
JPS57208142A (en) * | 1981-06-17 | 1982-12-21 | Toshiba Corp | Method for forming fine pattern |
JPS58212137A (en) * | 1982-06-03 | 1983-12-09 | Mitsubishi Electric Corp | Manufacture of semiconductor element |
JPS61194834A (en) * | 1985-02-25 | 1986-08-29 | モトローラ・インコーポレーテツド | Etching of polysilicon |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52128066A (en) * | 1976-04-20 | 1977-10-27 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS5461477A (en) * | 1977-10-26 | 1979-05-17 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of machining by electron beam or ion beam irradiation |
-
1979
- 1979-10-01 JP JP12754079A patent/JPS5650514A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52128066A (en) * | 1976-04-20 | 1977-10-27 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS5461477A (en) * | 1977-10-26 | 1979-05-17 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of machining by electron beam or ion beam irradiation |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57117239A (en) * | 1981-01-12 | 1982-07-21 | Toshiba Corp | Forming method for polycrystal silicon pattern |
JPS57208142A (en) * | 1981-06-17 | 1982-12-21 | Toshiba Corp | Method for forming fine pattern |
JPS58212137A (en) * | 1982-06-03 | 1983-12-09 | Mitsubishi Electric Corp | Manufacture of semiconductor element |
JPS61194834A (en) * | 1985-02-25 | 1986-08-29 | モトローラ・インコーポレーテツド | Etching of polysilicon |
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