JPS5637674A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5637674A JPS5637674A JP11379779A JP11379779A JPS5637674A JP S5637674 A JPS5637674 A JP S5637674A JP 11379779 A JP11379779 A JP 11379779A JP 11379779 A JP11379779 A JP 11379779A JP S5637674 A JPS5637674 A JP S5637674A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- trapezoidal shape
- region
- base
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To simplify the steps of manufacturing a semiconductor device by forming a base region in a semiconductor substrate, forming a polycrystalline Si layer of predetermined pattern making contact therewith, and forming a part of the side surface thereof of a trapezoidal shape or the other part thereof of a inverted trapezoidal shape, thereby eliminating a plated conductive passage metal. CONSTITUTION:An insulating layer 2 is coated on a semiconductor substrate 1, an opening is perforated thereat, a base region 3 is formed in the substrate 1, and polycrystalline Si layers 4 and 14 having a great deal of impurity and no impurity respectively are laminated on the entire surface thereof. Then, an insulating layer 13 corresponding to emitter electrode pattern is formed thereon by a photoetching process using a resist film 15 formed thereon, the exposed portion of the layer 14 is etched and removed with the layer 13 as a mask, and the thickness of the layer 4 thereunder is reduced to a half thereof. Thereafter, a resist 16 is coated on the emitter.base shortcircuiting portion, the exposed portion of the layer 4 is etched and removed, the layer 4 is formed in cross section in a trapezoidal shape 12 and the general cross sectional portion between the layers 4 and 14 is formed in inverted trapezoidal shape 11, and there are then formed as ordinary way an wmitter region 5, an insulating layer 6, a base coutact region 7, and an electrode 8 or the like.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11379779A JPS5637674A (en) | 1979-09-05 | 1979-09-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11379779A JPS5637674A (en) | 1979-09-05 | 1979-09-05 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5637674A true JPS5637674A (en) | 1981-04-11 |
JPS6346583B2 JPS6346583B2 (en) | 1988-09-16 |
Family
ID=14621316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11379779A Granted JPS5637674A (en) | 1979-09-05 | 1979-09-05 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5637674A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01174963U (en) * | 1988-05-30 | 1989-12-13 | ||
JPH03296222A (en) * | 1990-04-13 | 1991-12-26 | Nec Corp | Semiconductor device and its manufacture |
-
1979
- 1979-09-05 JP JP11379779A patent/JPS5637674A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01174963U (en) * | 1988-05-30 | 1989-12-13 | ||
JPH03296222A (en) * | 1990-04-13 | 1991-12-26 | Nec Corp | Semiconductor device and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPS6346583B2 (en) | 1988-09-16 |
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