JPS5772333A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5772333A JPS5772333A JP14858280A JP14858280A JPS5772333A JP S5772333 A JPS5772333 A JP S5772333A JP 14858280 A JP14858280 A JP 14858280A JP 14858280 A JP14858280 A JP 14858280A JP S5772333 A JPS5772333 A JP S5772333A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- amorphous
- oxidized
- injected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- -1 argon ions Chemical class 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To improve quality of a silicon dioxide film by a method wherein after ions are injected into a polycrystalline silicon layer by making said layer amorphous, the amorphous silicon layer is oxidized to form into an insulating film. CONSTITUTION:A polycrystalline silicon layer 12 having film thickness of about 7,000mum is deposited on the upper surface of an insulating film 11 on a semiconductor substrat 10. A photoresist film is applied on a layer 12, and a resist film mask 13 is formed. Next the exposed part of the layer 12 is removed by etching, and further the mask 13 is removed to allow the layer 12 of the first layer to be formed. After that, argon ions are injected from the surface, and the surface of the layer 12 is made to be an amorphous layer 12'. And, the layer 12' is oxidized by oxidation treatment at high temperature of about 1,000 deg.C, thereby allowing a silicon dioxide film 14 having film thickness of about 2,000-4,000Angstrom to be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14858280A JPS5772333A (en) | 1980-10-23 | 1980-10-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14858280A JPS5772333A (en) | 1980-10-23 | 1980-10-23 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5772333A true JPS5772333A (en) | 1982-05-06 |
Family
ID=15455960
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14858280A Pending JPS5772333A (en) | 1980-10-23 | 1980-10-23 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5772333A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5931068A (en) * | 1982-08-13 | 1984-02-18 | Seiko Epson Corp | Manufacture of semiconductor integrated circuit device |
JPS59127841A (en) * | 1983-01-12 | 1984-07-23 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor device |
JPS624375A (en) * | 1985-06-29 | 1987-01-10 | Sony Corp | Semiconductor device |
JPS63502470A (en) * | 1986-02-25 | 1988-09-14 | アメリカン テレフォン アンド テレグラフ カムパニ− | Method for manufacturing a device having a thin dielectric layer |
JPH02111035A (en) * | 1988-10-20 | 1990-04-24 | Fuji Xerox Co Ltd | Manufacture of polysilicon thin-film transistor |
JP2014220364A (en) * | 2013-05-08 | 2014-11-20 | 株式会社豊田自動織機 | Process of manufacturing semiconductor substrate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4991189A (en) * | 1972-12-29 | 1974-08-30 | ||
JPS5349970A (en) * | 1976-10-18 | 1978-05-06 | Hitachi Ltd | Semiconductor device |
-
1980
- 1980-10-23 JP JP14858280A patent/JPS5772333A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4991189A (en) * | 1972-12-29 | 1974-08-30 | ||
JPS5349970A (en) * | 1976-10-18 | 1978-05-06 | Hitachi Ltd | Semiconductor device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5931068A (en) * | 1982-08-13 | 1984-02-18 | Seiko Epson Corp | Manufacture of semiconductor integrated circuit device |
JPS59127841A (en) * | 1983-01-12 | 1984-07-23 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor device |
JPH0228250B2 (en) * | 1983-01-12 | 1990-06-22 | Nippon Telegraph & Telephone | |
JPS624375A (en) * | 1985-06-29 | 1987-01-10 | Sony Corp | Semiconductor device |
JPS63502470A (en) * | 1986-02-25 | 1988-09-14 | アメリカン テレフォン アンド テレグラフ カムパニ− | Method for manufacturing a device having a thin dielectric layer |
JPH02111035A (en) * | 1988-10-20 | 1990-04-24 | Fuji Xerox Co Ltd | Manufacture of polysilicon thin-film transistor |
JP2014220364A (en) * | 2013-05-08 | 2014-11-20 | 株式会社豊田自動織機 | Process of manufacturing semiconductor substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5772333A (en) | Manufacture of semiconductor device | |
JPS57154855A (en) | Manufacture of semiconductor device | |
JPS56135975A (en) | Manufacture of semiconductor device | |
JPS56111241A (en) | Preparation of semiconductor device | |
JPS559415A (en) | Semiconductor manufacturing method | |
JPS5772331A (en) | Manufacture of semiconductor device | |
JPS571243A (en) | Manufacture of semiconductor device | |
JPS5633841A (en) | Manufacture of semiconductor device | |
JPS54117690A (en) | Production of semiconductor device | |
JPS5779641A (en) | Manufacture of semiconductor device | |
JPS5687342A (en) | Manufacture of semiconductor device | |
JPS5475275A (en) | Manufacture of semiconductor device | |
JPS647566A (en) | Manufacture of thin film transistor | |
JPS5513964A (en) | Method of manufacturing semiconductor device | |
JPS55130140A (en) | Fabricating method of semiconductor device | |
JPS6430244A (en) | Manufacture of semiconductor device | |
JPS5489594A (en) | Manufacture for integrated circuit | |
JPS5513951A (en) | Manufacturing method of semiconductor device | |
JPS5759348A (en) | Manufacture of semiconductor device | |
JPS6423529A (en) | Manufacture of semiconductor device | |
JPS56111265A (en) | Manufacture of semiconductor device | |
JPS5513995A (en) | Method of producing a semiconductor device | |
JPS57181137A (en) | Manufacture of semiconductor device | |
JPS5511312A (en) | Manufacturing method of semiconductor device | |
JPS5754345A (en) | Manufacture of semiconductor device |