JPS56101745A - Formation of microminiature electrode - Google Patents

Formation of microminiature electrode

Info

Publication number
JPS56101745A
JPS56101745A JP422480A JP422480A JPS56101745A JP S56101745 A JPS56101745 A JP S56101745A JP 422480 A JP422480 A JP 422480A JP 422480 A JP422480 A JP 422480A JP S56101745 A JPS56101745 A JP S56101745A
Authority
JP
Japan
Prior art keywords
ion beam
layer
electrode material
resist layer
material layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP422480A
Other languages
Japanese (ja)
Inventor
Hiroi Ootake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP422480A priority Critical patent/JPS56101745A/en
Publication of JPS56101745A publication Critical patent/JPS56101745A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To form a microminiature electrode pattern by irradiating an ion beam to the part of an electrode material layer formed through a resist on a substrate as adhered to the end surface of the thickness of the resist layer or etching the resist layer with other ion beam. CONSTITUTION:A photoresist layer 2 of predetermined pattern is formed on the semiconductor substrate 1, the electrode material layer 4 of aluminum or the like is formed on the entire surface, then the ion beam 5 of Ar or the like is obliquely rotatably irradiated thereto so as to remove the electrode material layer 4' adhered to the end surface of the resist layer, thereafter oxygen ion beam is irradiated thereto, and the electrode material layer on the resist layer 2 and the resist layer 2 are removed. Since the microminiature electrode pattern can be thus lifted off by dry etching in this manner, it can simplify the setps and labor-save the process.
JP422480A 1980-01-17 1980-01-17 Formation of microminiature electrode Pending JPS56101745A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP422480A JPS56101745A (en) 1980-01-17 1980-01-17 Formation of microminiature electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP422480A JPS56101745A (en) 1980-01-17 1980-01-17 Formation of microminiature electrode

Publications (1)

Publication Number Publication Date
JPS56101745A true JPS56101745A (en) 1981-08-14

Family

ID=11578611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP422480A Pending JPS56101745A (en) 1980-01-17 1980-01-17 Formation of microminiature electrode

Country Status (1)

Country Link
JP (1) JPS56101745A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02253615A (en) * 1989-03-27 1990-10-12 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JP2013029670A (en) * 2011-07-28 2013-02-07 Denso Corp Method of manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02253615A (en) * 1989-03-27 1990-10-12 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JP2013029670A (en) * 2011-07-28 2013-02-07 Denso Corp Method of manufacturing semiconductor device

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