JPS57208142A - Method for forming fine pattern - Google Patents

Method for forming fine pattern

Info

Publication number
JPS57208142A
JPS57208142A JP9342881A JP9342881A JPS57208142A JP S57208142 A JPS57208142 A JP S57208142A JP 9342881 A JP9342881 A JP 9342881A JP 9342881 A JP9342881 A JP 9342881A JP S57208142 A JPS57208142 A JP S57208142A
Authority
JP
Japan
Prior art keywords
work
irradiated
metamorphic layer
desired pattern
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9342881A
Other languages
Japanese (ja)
Inventor
Makoto Yoshimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9342881A priority Critical patent/JPS57208142A/en
Publication of JPS57208142A publication Critical patent/JPS57208142A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To permit formation of fine patterns by a method wherein a charged beam is irradiated upon the surface of a work in accordance with the desired pattern so as to form a metamorphic layer near the surface, and then the work is etched using the metamorpic layer as a mask. CONSTITUTION:An ion beam is irradiated upon the surface of a work 12 formed on a substrate 11 in accordance with the desired pattern so as to form a metamorphic layer 13 in the beam irradiated portion of the work 12. Then, the work 12 is etched using the metamorphic layer 13 as a mask, so that the work 12 is processed to have the desired pattern. At this time, the kind of irradiated ions is selected such that it can form a substance on the surface of the work, which substance has resistance against anisotropic etching subsequently applied. Acceleration voltage, an irradiation amount and other parameters of the ion beam are preset such that the irradiated ions are held on the surface of the work so as to form the metamorphic layer in that area.
JP9342881A 1981-06-17 1981-06-17 Method for forming fine pattern Pending JPS57208142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9342881A JPS57208142A (en) 1981-06-17 1981-06-17 Method for forming fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9342881A JPS57208142A (en) 1981-06-17 1981-06-17 Method for forming fine pattern

Publications (1)

Publication Number Publication Date
JPS57208142A true JPS57208142A (en) 1982-12-21

Family

ID=14082029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9342881A Pending JPS57208142A (en) 1981-06-17 1981-06-17 Method for forming fine pattern

Country Status (1)

Country Link
JP (1) JPS57208142A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4569124A (en) * 1984-05-22 1986-02-11 Hughes Aircraft Company Method for forming thin conducting lines by ion implantation and preferential etching
JPS61194834A (en) * 1985-02-25 1986-08-29 モトローラ・インコーポレーテツド Etching of polysilicon
US4772539A (en) * 1987-03-23 1988-09-20 International Business Machines Corporation High resolution E-beam lithographic technique
JPH03136327A (en) * 1989-10-23 1991-06-11 Hikari Gijutsu Kenkyu Kaihatsu Kk Pattern forming method for semiconductor
JPH04188620A (en) * 1990-11-19 1992-07-07 Canon Inc Microscopic working method and device
JPH04188621A (en) * 1990-11-19 1992-07-07 Canon Inc Optical surface treatment method and device
JPH04188619A (en) * 1990-11-19 1992-07-07 Canon Inc Microscopic working method
US5286340A (en) * 1991-09-13 1994-02-15 University Of Pittsburgh Of The Commonwealth System Of Higher Education Process for controlling silicon etching by atomic hydrogen
JPH06310491A (en) * 1993-04-27 1994-11-04 Nec Corp Forming method for pattern on solid surface
US5962194A (en) * 1990-09-26 1999-10-05 Canon Kabushiki Kaisha Processing method and apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650514A (en) * 1979-10-01 1981-05-07 Mitsubishi Electric Corp Formation of fine pattern
JPS5666038A (en) * 1979-11-01 1981-06-04 Mitsubishi Electric Corp Formation of micro-pattern
JPS56133835A (en) * 1980-03-24 1981-10-20 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS57177525A (en) * 1981-04-24 1982-11-01 Sony Corp Etching method for silicon oxide

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650514A (en) * 1979-10-01 1981-05-07 Mitsubishi Electric Corp Formation of fine pattern
JPS5666038A (en) * 1979-11-01 1981-06-04 Mitsubishi Electric Corp Formation of micro-pattern
JPS56133835A (en) * 1980-03-24 1981-10-20 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS57177525A (en) * 1981-04-24 1982-11-01 Sony Corp Etching method for silicon oxide

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4569124A (en) * 1984-05-22 1986-02-11 Hughes Aircraft Company Method for forming thin conducting lines by ion implantation and preferential etching
JPS61194834A (en) * 1985-02-25 1986-08-29 モトローラ・インコーポレーテツド Etching of polysilicon
US4772539A (en) * 1987-03-23 1988-09-20 International Business Machines Corporation High resolution E-beam lithographic technique
JPH03136327A (en) * 1989-10-23 1991-06-11 Hikari Gijutsu Kenkyu Kaihatsu Kk Pattern forming method for semiconductor
US5962194A (en) * 1990-09-26 1999-10-05 Canon Kabushiki Kaisha Processing method and apparatus
US6025115A (en) * 1990-09-26 2000-02-15 Canon Kabushiki Kaisha Processing method for etching a substrate
JPH04188620A (en) * 1990-11-19 1992-07-07 Canon Inc Microscopic working method and device
JPH04188621A (en) * 1990-11-19 1992-07-07 Canon Inc Optical surface treatment method and device
JPH04188619A (en) * 1990-11-19 1992-07-07 Canon Inc Microscopic working method
US5286340A (en) * 1991-09-13 1994-02-15 University Of Pittsburgh Of The Commonwealth System Of Higher Education Process for controlling silicon etching by atomic hydrogen
JPH06310491A (en) * 1993-04-27 1994-11-04 Nec Corp Forming method for pattern on solid surface

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