JPS5647996A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5647996A
JPS5647996A JP12122279A JP12122279A JPS5647996A JP S5647996 A JPS5647996 A JP S5647996A JP 12122279 A JP12122279 A JP 12122279A JP 12122279 A JP12122279 A JP 12122279A JP S5647996 A JPS5647996 A JP S5647996A
Authority
JP
Japan
Prior art keywords
addresses
matrix
blocks
access period
rom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12122279A
Other languages
English (en)
Inventor
Shigeki Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP12122279A priority Critical patent/JPS5647996A/ja
Publication of JPS5647996A publication Critical patent/JPS5647996A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
JP12122279A 1979-09-20 1979-09-20 Semiconductor memory device Pending JPS5647996A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12122279A JPS5647996A (en) 1979-09-20 1979-09-20 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12122279A JPS5647996A (en) 1979-09-20 1979-09-20 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5647996A true JPS5647996A (en) 1981-04-30

Family

ID=14805911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12122279A Pending JPS5647996A (en) 1979-09-20 1979-09-20 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5647996A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589285A (ja) * 1981-07-08 1983-01-19 Toshiba Corp 半導体装置
JPS61233495A (ja) * 1985-04-08 1986-10-17 Nec Corp 半導体記憶装置
JPS62211644A (ja) * 1986-03-03 1987-09-17 フエリツクス・シエラ−・ユニオ−ル・ゲ−・エム・ベ−・ハ−・ウント・コンパニ−・コマンデイ−トゲゼルシヤフト ポリオレフイン樹脂−被覆耐水性写真支持紙
JPS62252590A (ja) * 1986-04-24 1987-11-04 Ascii Corp メモリ装置
JPS62271291A (ja) * 1986-05-20 1987-11-25 Ascii Corp メモリ装置
JPS63180949A (ja) * 1987-01-21 1988-07-26 Mitsubishi Paper Mills Ltd 写真印画紙用支持体
JPH07211064A (ja) * 1993-12-24 1995-08-11 Samsung Electron Co Ltd メモリアドレシング方法および装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230388A (en) * 1975-09-04 1977-03-08 Hitachi Ltd Semiconductor integrated circuit device constructed with insulating ga te field effect transistor
JPS5380931A (en) * 1976-12-27 1978-07-17 Hitachi Ltd Semiconductor lead-only memory
JPS54109730A (en) * 1978-02-17 1979-08-28 Hitachi Ltd Semiconductor read-only memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230388A (en) * 1975-09-04 1977-03-08 Hitachi Ltd Semiconductor integrated circuit device constructed with insulating ga te field effect transistor
JPS5380931A (en) * 1976-12-27 1978-07-17 Hitachi Ltd Semiconductor lead-only memory
JPS54109730A (en) * 1978-02-17 1979-08-28 Hitachi Ltd Semiconductor read-only memory

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589285A (ja) * 1981-07-08 1983-01-19 Toshiba Corp 半導体装置
JPH0373080B2 (ja) * 1981-07-08 1991-11-20 Tokyo Shibaura Electric Co
JPS61233495A (ja) * 1985-04-08 1986-10-17 Nec Corp 半導体記憶装置
JPS62211644A (ja) * 1986-03-03 1987-09-17 フエリツクス・シエラ−・ユニオ−ル・ゲ−・エム・ベ−・ハ−・ウント・コンパニ−・コマンデイ−トゲゼルシヤフト ポリオレフイン樹脂−被覆耐水性写真支持紙
JPS62252590A (ja) * 1986-04-24 1987-11-04 Ascii Corp メモリ装置
JPS62271291A (ja) * 1986-05-20 1987-11-25 Ascii Corp メモリ装置
JPS63180949A (ja) * 1987-01-21 1988-07-26 Mitsubishi Paper Mills Ltd 写真印画紙用支持体
JPH07211064A (ja) * 1993-12-24 1995-08-11 Samsung Electron Co Ltd メモリアドレシング方法および装置

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