JPS56137580A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS56137580A
JPS56137580A JP3837280A JP3837280A JPS56137580A JP S56137580 A JPS56137580 A JP S56137580A JP 3837280 A JP3837280 A JP 3837280A JP 3837280 A JP3837280 A JP 3837280A JP S56137580 A JPS56137580 A JP S56137580A
Authority
JP
Japan
Prior art keywords
signal
write
data
changed
shot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3837280A
Other languages
Japanese (ja)
Other versions
JPS6117077B2 (en
Inventor
Toru Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3837280A priority Critical patent/JPS56137580A/en
Publication of JPS56137580A publication Critical patent/JPS56137580A/en
Publication of JPS6117077B2 publication Critical patent/JPS6117077B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells

Landscapes

  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To prevent mis-write-in to a nonselection cell, by making the required minimum period into an internal write cycle, independently of an external write cycle. CONSTITUTION:The external write-in signal WE is fed to the one shot WE generating circuit 11 and inverter 12, and the external write-in data signal DIN is fed to the data generating circuit 13 and the one shot data generating circuit 14. Further, when the logic level of the signal WE is changed for a given period, an output is obtained in the circuit 11, one shot signal is generated only at the output of the gate 19 into write-in state of data ''1''. When the logic level of the signal DIN is changed at the next period without signal WE change, the output state of the gate 19 is changed to obtain the write-state of data ''0''.
JP3837280A 1980-03-26 1980-03-26 Semiconductor storage device Granted JPS56137580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3837280A JPS56137580A (en) 1980-03-26 1980-03-26 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3837280A JPS56137580A (en) 1980-03-26 1980-03-26 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS56137580A true JPS56137580A (en) 1981-10-27
JPS6117077B2 JPS6117077B2 (en) 1986-05-06

Family

ID=12523445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3837280A Granted JPS56137580A (en) 1980-03-26 1980-03-26 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS56137580A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61142590A (en) * 1984-12-14 1986-06-30 Hitachi Ltd Semiconductor memory device
JPH01241089A (en) * 1988-03-23 1989-09-26 Toshiba Corp Static type random access memory
JPH01251496A (en) * 1988-03-31 1989-10-06 Toshiba Corp Static type random access memory
WO2012117524A1 (en) * 2011-03-01 2012-09-07 富士通株式会社 Memory circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0377789U (en) * 1989-11-30 1991-08-06

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61142590A (en) * 1984-12-14 1986-06-30 Hitachi Ltd Semiconductor memory device
JPH01241089A (en) * 1988-03-23 1989-09-26 Toshiba Corp Static type random access memory
JPH01251496A (en) * 1988-03-31 1989-10-06 Toshiba Corp Static type random access memory
WO2012117524A1 (en) * 2011-03-01 2012-09-07 富士通株式会社 Memory circuit

Also Published As

Publication number Publication date
JPS6117077B2 (en) 1986-05-06

Similar Documents

Publication Publication Date Title
JPS56137580A (en) Semiconductor storage device
JPS5358736A (en) Input/output control system for mos dynamic random access memory
JPS5427734A (en) Dynamic semiconductor memory
JPS54150045A (en) Memory circuit
JPS5730193A (en) Semiconductor storage device
JPS5719822A (en) Information processor
JPS5286746A (en) Pulse count readout control circuit
JPS5710853A (en) Memory device
JPS5354430A (en) Memory integrated circuit
JPS5637573A (en) Integrated circuit with tracer memory
JPS5383439A (en) Semiconductor memory unit
JPS5329480A (en) Program controller
JPS52137943A (en) Information reading circuit
JPS5773532A (en) Count value storage device
JPS5415621A (en) Memory unit
JPS57189255A (en) Information processor
JPS54161238A (en) Testing method for magnetic bubble memory
JPS5379329A (en) Test method of memory circuit
JPS57167196A (en) Memory circuit
JPS6467794A (en) Semiconductor integrated circuit
JPS5573987A (en) Semiconductor memory device
JPS54126006A (en) Information service device
JPS56111185A (en) Semiconductor integrated memory cell
JPS5352325A (en) Mos random access memory
JPS5534310A (en) Semiconductor memory device