JPS52155927A - Mos random access memory - Google Patents

Mos random access memory

Info

Publication number
JPS52155927A
JPS52155927A JP7290976A JP7290976A JPS52155927A JP S52155927 A JPS52155927 A JP S52155927A JP 7290976 A JP7290976 A JP 7290976A JP 7290976 A JP7290976 A JP 7290976A JP S52155927 A JPS52155927 A JP S52155927A
Authority
JP
Japan
Prior art keywords
random access
access memory
mos random
memory cell
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7290976A
Other languages
Japanese (ja)
Other versions
JPS595986B2 (en
Inventor
Koji Matsuki
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP51072909A priority Critical patent/JPS595986B2/en
Publication of JPS52155927A publication Critical patent/JPS52155927A/en
Publication of JPS595986B2 publication Critical patent/JPS595986B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To decrease the number of elements of the memory cell and to enable high integration and high speed readout, by reading out the information of one memory cell with the latch circuit via one digit line, in CMOS RAM of 5 transistors one cell constitution.
JP51072909A 1976-06-21 1976-06-21 MOS random access memory Expired JPS595986B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51072909A JPS595986B2 (en) 1976-06-21 1976-06-21 MOS random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51072909A JPS595986B2 (en) 1976-06-21 1976-06-21 MOS random access memory

Publications (2)

Publication Number Publication Date
JPS52155927A true JPS52155927A (en) 1977-12-24
JPS595986B2 JPS595986B2 (en) 1984-02-08

Family

ID=13502936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51072909A Expired JPS595986B2 (en) 1976-06-21 1976-06-21 MOS random access memory

Country Status (1)

Country Link
JP (1) JPS595986B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132083A (en) * 1990-09-20 1992-05-06 Mitsubishi Electric Corp Semiconductor logic circuit device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62177767U (en) * 1986-05-01 1987-11-11
JP2573392B2 (en) * 1990-03-30 1997-01-22 株式会社東芝 Semiconductor storage device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132083A (en) * 1990-09-20 1992-05-06 Mitsubishi Electric Corp Semiconductor logic circuit device
JP2796644B2 (en) * 1990-09-20 1998-09-10 三菱電機株式会社 Semiconductor logic circuit device

Also Published As

Publication number Publication date
JPS595986B2 (en) 1984-02-08

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