JPS5627940A - Manufacture of semiconductor elements - Google Patents

Manufacture of semiconductor elements

Info

Publication number
JPS5627940A
JPS5627940A JP10345579A JP10345579A JPS5627940A JP S5627940 A JPS5627940 A JP S5627940A JP 10345579 A JP10345579 A JP 10345579A JP 10345579 A JP10345579 A JP 10345579A JP S5627940 A JPS5627940 A JP S5627940A
Authority
JP
Japan
Prior art keywords
fault
elements
semiconductor elements
absorbing source
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10345579A
Other languages
Japanese (ja)
Inventor
Masamichi Yoshida
Kazunori Imaoka
Yunosuke Kawabe
Atsuo Iida
Hideo Kashimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10345579A priority Critical patent/JPS5627940A/en
Publication of JPS5627940A publication Critical patent/JPS5627940A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent faults from appearing in the formation of elements by a method wherein an element forming process is precticed providing a fault absorbing source on the reverse face or inside of a semiconductor substrate which contains the specific ammount of oxygen. CONSTITUTION:The reverse face of a silicon substrate 1 containing oxygen of 5X10<17>-1.5X10<18> (atoms/cm<2>) is wrapped to form damage layer 2 and made an absorbing source of microscopic fault appearing in the heating process accompanied by the subsequent forming process of elements, whereby the characteristic of the semiconductor elements can be improved and the yield thereof as well without appearance of both the microscopic faults and slip lines when manufacturing semiconductor elements. In this case, the fault absorbing source is allowed to be provided inside of the substrate with ion injection.
JP10345579A 1979-08-14 1979-08-14 Manufacture of semiconductor elements Pending JPS5627940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10345579A JPS5627940A (en) 1979-08-14 1979-08-14 Manufacture of semiconductor elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10345579A JPS5627940A (en) 1979-08-14 1979-08-14 Manufacture of semiconductor elements

Publications (1)

Publication Number Publication Date
JPS5627940A true JPS5627940A (en) 1981-03-18

Family

ID=14354495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10345579A Pending JPS5627940A (en) 1979-08-14 1979-08-14 Manufacture of semiconductor elements

Country Status (1)

Country Link
JP (1) JPS5627940A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59186331A (en) * 1983-04-04 1984-10-23 モンサント・コンパニ− Method of producing semiconductor substrate
JPS6124240A (en) * 1984-07-13 1986-02-01 Toshiba Corp Semiconductor substrate
JPS6276714A (en) * 1985-09-30 1987-04-08 Mitsubishi Metal Corp Silicon wafer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59186331A (en) * 1983-04-04 1984-10-23 モンサント・コンパニ− Method of producing semiconductor substrate
JPS6124240A (en) * 1984-07-13 1986-02-01 Toshiba Corp Semiconductor substrate
JPH0475655B2 (en) * 1984-07-13 1992-12-01 Tokyo Shibaura Electric Co
JPS6276714A (en) * 1985-09-30 1987-04-08 Mitsubishi Metal Corp Silicon wafer

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