JPS5375861A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5375861A JPS5375861A JP15093576A JP15093576A JPS5375861A JP S5375861 A JPS5375861 A JP S5375861A JP 15093576 A JP15093576 A JP 15093576A JP 15093576 A JP15093576 A JP 15093576A JP S5375861 A JPS5375861 A JP S5375861A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- glass film
- indroquinazoline
- polyimido
- phosporus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To prevent the occurrence of a peeling phenomenon even in a high temperature high moisture state by providing a phosphorous pentaoxide concentration of less than 10 mol% to glass film in a semiconductor device comprising depositing an organic resin film of polyimido-indroquinazoline-dion synthetic resin on the surface of the phosporus silicate glass film containing phosphorus.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15093576A JPS5375861A (en) | 1976-12-17 | 1976-12-17 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15093576A JPS5375861A (en) | 1976-12-17 | 1976-12-17 | Semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59050954A Division JPS59181541A (en) | 1984-03-19 | 1984-03-19 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5375861A true JPS5375861A (en) | 1978-07-05 |
JPS6132812B2 JPS6132812B2 (en) | 1986-07-29 |
Family
ID=15507618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15093576A Granted JPS5375861A (en) | 1976-12-17 | 1976-12-17 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5375861A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5612739A (en) * | 1979-07-10 | 1981-02-07 | Nec Corp | Semiconductor device |
JPS6022368A (en) * | 1983-07-18 | 1985-02-04 | Toshiba Corp | Semiconductor device |
-
1976
- 1976-12-17 JP JP15093576A patent/JPS5375861A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5612739A (en) * | 1979-07-10 | 1981-02-07 | Nec Corp | Semiconductor device |
JPS6022368A (en) * | 1983-07-18 | 1985-02-04 | Toshiba Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6132812B2 (en) | 1986-07-29 |
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