JPS5375861A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5375861A
JPS5375861A JP15093576A JP15093576A JPS5375861A JP S5375861 A JPS5375861 A JP S5375861A JP 15093576 A JP15093576 A JP 15093576A JP 15093576 A JP15093576 A JP 15093576A JP S5375861 A JPS5375861 A JP S5375861A
Authority
JP
Japan
Prior art keywords
semiconductor device
glass film
indroquinazoline
polyimido
phosporus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15093576A
Other languages
Japanese (ja)
Other versions
JPS6132812B2 (en
Inventor
Tokio Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15093576A priority Critical patent/JPS5375861A/en
Publication of JPS5375861A publication Critical patent/JPS5375861A/en
Publication of JPS6132812B2 publication Critical patent/JPS6132812B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To prevent the occurrence of a peeling phenomenon even in a high temperature high moisture state by providing a phosphorous pentaoxide concentration of less than 10 mol% to glass film in a semiconductor device comprising depositing an organic resin film of polyimido-indroquinazoline-dion synthetic resin on the surface of the phosporus silicate glass film containing phosphorus.
COPYRIGHT: (C)1978,JPO&Japio
JP15093576A 1976-12-17 1976-12-17 Semiconductor device Granted JPS5375861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15093576A JPS5375861A (en) 1976-12-17 1976-12-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15093576A JPS5375861A (en) 1976-12-17 1976-12-17 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59050954A Division JPS59181541A (en) 1984-03-19 1984-03-19 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5375861A true JPS5375861A (en) 1978-07-05
JPS6132812B2 JPS6132812B2 (en) 1986-07-29

Family

ID=15507618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15093576A Granted JPS5375861A (en) 1976-12-17 1976-12-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5375861A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612739A (en) * 1979-07-10 1981-02-07 Nec Corp Semiconductor device
JPS6022368A (en) * 1983-07-18 1985-02-04 Toshiba Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612739A (en) * 1979-07-10 1981-02-07 Nec Corp Semiconductor device
JPS6022368A (en) * 1983-07-18 1985-02-04 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6132812B2 (en) 1986-07-29

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