JPS53130979A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53130979A
JPS53130979A JP4616977A JP4616977A JPS53130979A JP S53130979 A JPS53130979 A JP S53130979A JP 4616977 A JP4616977 A JP 4616977A JP 4616977 A JP4616977 A JP 4616977A JP S53130979 A JPS53130979 A JP S53130979A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
forming
sio
reliability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4616977A
Other languages
Japanese (ja)
Inventor
Kazutaka Kamitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4616977A priority Critical patent/JPS53130979A/en
Publication of JPS53130979A publication Critical patent/JPS53130979A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To manufacture a device excellent in electric performance and reliability, by forming a SiO2 thin film including phosphorus at the back of a substrate with CVD method, and forming a strain layer with heat treatment and also performing getting.
COPYRIGHT: (C)1978,JPO&Japio
JP4616977A 1977-04-20 1977-04-20 Manufacture for semiconductor device Pending JPS53130979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4616977A JPS53130979A (en) 1977-04-20 1977-04-20 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4616977A JPS53130979A (en) 1977-04-20 1977-04-20 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS53130979A true JPS53130979A (en) 1978-11-15

Family

ID=12739510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4616977A Pending JPS53130979A (en) 1977-04-20 1977-04-20 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS53130979A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57193039A (en) * 1981-05-22 1982-11-27 Sony Corp Manufacture of semiconductor device
US8329563B2 (en) 2006-02-24 2012-12-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a gettering layer and manufacturing method therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57193039A (en) * 1981-05-22 1982-11-27 Sony Corp Manufacture of semiconductor device
JPH0542134B2 (en) * 1981-05-22 1993-06-25 Sony Corp
US8329563B2 (en) 2006-02-24 2012-12-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a gettering layer and manufacturing method therefor

Similar Documents

Publication Publication Date Title
JPS5425178A (en) Manufacture for semiconductor device
JPS54589A (en) Burying method of insulator
JPS5389374A (en) Production of semiconductor device
JPS5331964A (en) Production of semiconductor substrates
JPS53130979A (en) Manufacture for semiconductor device
JPS5421265A (en) Forming method of semiconductor oxide film
JPS5420671A (en) Production of semiconductor devices
JPS543473A (en) Manufacture of semiconductor device
JPS533066A (en) Electrode formation method
JPS53105385A (en) Manufacture for semiconductor
JPS5389375A (en) Production of semiconductor device
JPS5441673A (en) Semiconductor device and its manufacture
JPS5335375A (en) Heating method
JPS53142870A (en) Manufacture for semiconductor device
JPS5331966A (en) Production of semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS533785A (en) Thin film solar battery
JPS53107284A (en) Production of semiconductor device
JPS53101977A (en) Diffusion method of inpurity to semiconductor substrate
JPS547867A (en) Manufacture for semiconductor device
JPS5436192A (en) Manufacture for semiconductor
JPS53119669A (en) Production of semiconductor device
JPS53138280A (en) Manufacture of semiconductor device
JPS5421182A (en) Manufacture for semiconductor device
JPS5289467A (en) Semiconductor device