JPS54122973A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS54122973A JPS54122973A JP3013678A JP3013678A JPS54122973A JP S54122973 A JPS54122973 A JP S54122973A JP 3013678 A JP3013678 A JP 3013678A JP 3013678 A JP3013678 A JP 3013678A JP S54122973 A JPS54122973 A JP S54122973A
- Authority
- JP
- Japan
- Prior art keywords
- ions
- type
- annealing
- resistance layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To simultaneously form the high resistance layer and the p type low resistance layer selectively, by making annealing after injecting BF2 ions and Kr ions on the n type Si substrate.
CONSTITUTION: After injecting Kr ions and BF2 ions in the n type Si substrate, the resistance value is remarkably changed with the amount of injection and annealing temperature, by annealing. On the n type Si substrate of 1014cm-3,Kr ions are injected by 1 x 1013cm-2 at 70 KeV, the layer 3 is provided, and BF2 ions are injected by 1 x 1013cm-2 at 45 KeV on the entire surface by removing the mask 2 and annealing at 850°C for 20 minutes is made. The both ion injection layers 5 are high resistance layer 5, and the BF2 ion injection layer 4 is p type low resistance layer with B.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3013678A JPS54122973A (en) | 1978-03-16 | 1978-03-16 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3013678A JPS54122973A (en) | 1978-03-16 | 1978-03-16 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54122973A true JPS54122973A (en) | 1979-09-22 |
Family
ID=12295344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3013678A Pending JPS54122973A (en) | 1978-03-16 | 1978-03-16 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54122973A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4851359A (en) * | 1985-12-27 | 1989-07-25 | Bull S.A. | Method of producing an electrical resistor by implanting a semiconductor material with rare gas |
EP0700102A1 (en) * | 1994-08-24 | 1996-03-06 | Seiko Instruments Inc. | Method for making opto-electronic conversion semiconductor device |
-
1978
- 1978-03-16 JP JP3013678A patent/JPS54122973A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4851359A (en) * | 1985-12-27 | 1989-07-25 | Bull S.A. | Method of producing an electrical resistor by implanting a semiconductor material with rare gas |
EP0700102A1 (en) * | 1994-08-24 | 1996-03-06 | Seiko Instruments Inc. | Method for making opto-electronic conversion semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54122973A (en) | Manufacture for semiconductor device | |
JPS57186284A (en) | Manufacture of magnetic bubble memory element | |
JPS51142975A (en) | Production method of semiconductor devices | |
JPS5783059A (en) | Manufacture of mos type semiconductor device | |
JPS5515230A (en) | Semiconductor device and its manufacturing method | |
JPS5437690A (en) | Manufacture for semiconductor device | |
JPS5444880A (en) | Manufacture of semiconductor device | |
JPS5420671A (en) | Production of semiconductor devices | |
JPS54109377A (en) | Manufacture for semiconductor device | |
JPS5458381A (en) | Manufacture for semiconductor device | |
JPS54131881A (en) | Junction-type field effect transistor | |
JPS5346272A (en) | Impurity diffusion method | |
JPS5534433A (en) | Preparation of semiconductor device | |
JPS5791537A (en) | Manufacture of semiconductor device | |
JPS55110056A (en) | Semiconductor device | |
JPS5654070A (en) | Method of manufacturing semiconductor device | |
JPS5272162A (en) | Production of semiconductor device | |
JPS5513951A (en) | Manufacturing method of semiconductor device | |
JPS57112075A (en) | Insulating gate fet | |
JPS54109384A (en) | Semiconductor device | |
JPS5372473A (en) | Manufacture of mis type semicondctor device | |
JPS54122982A (en) | Manufacture for complementary mos integrated circuit device | |
JPS5423483A (en) | Manufacture for semiconductor device | |
JPS5492172A (en) | Semiconductor device | |
JPS5219967A (en) | Semiconductor manufacturing process |