JPS54122973A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS54122973A
JPS54122973A JP3013678A JP3013678A JPS54122973A JP S54122973 A JPS54122973 A JP S54122973A JP 3013678 A JP3013678 A JP 3013678A JP 3013678 A JP3013678 A JP 3013678A JP S54122973 A JPS54122973 A JP S54122973A
Authority
JP
Japan
Prior art keywords
ions
type
annealing
resistance layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3013678A
Other languages
Japanese (ja)
Inventor
Shigeru Tatsuta
Teruo Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3013678A priority Critical patent/JPS54122973A/en
Publication of JPS54122973A publication Critical patent/JPS54122973A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To simultaneously form the high resistance layer and the p type low resistance layer selectively, by making annealing after injecting BF2 ions and Kr ions on the n type Si substrate.
CONSTITUTION: After injecting Kr ions and BF2 ions in the n type Si substrate, the resistance value is remarkably changed with the amount of injection and annealing temperature, by annealing. On the n type Si substrate of 1014cm-3,Kr ions are injected by 1 x 1013cm-2 at 70 KeV, the layer 3 is provided, and BF2 ions are injected by 1 x 1013cm-2 at 45 KeV on the entire surface by removing the mask 2 and annealing at 850°C for 20 minutes is made. The both ion injection layers 5 are high resistance layer 5, and the BF2 ion injection layer 4 is p type low resistance layer with B.
COPYRIGHT: (C)1979,JPO&Japio
JP3013678A 1978-03-16 1978-03-16 Manufacture for semiconductor device Pending JPS54122973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3013678A JPS54122973A (en) 1978-03-16 1978-03-16 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3013678A JPS54122973A (en) 1978-03-16 1978-03-16 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS54122973A true JPS54122973A (en) 1979-09-22

Family

ID=12295344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3013678A Pending JPS54122973A (en) 1978-03-16 1978-03-16 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS54122973A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851359A (en) * 1985-12-27 1989-07-25 Bull S.A. Method of producing an electrical resistor by implanting a semiconductor material with rare gas
EP0700102A1 (en) * 1994-08-24 1996-03-06 Seiko Instruments Inc. Method for making opto-electronic conversion semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851359A (en) * 1985-12-27 1989-07-25 Bull S.A. Method of producing an electrical resistor by implanting a semiconductor material with rare gas
EP0700102A1 (en) * 1994-08-24 1996-03-06 Seiko Instruments Inc. Method for making opto-electronic conversion semiconductor device

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