JPS57132368A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57132368A
JPS57132368A JP21239881A JP21239881A JPS57132368A JP S57132368 A JPS57132368 A JP S57132368A JP 21239881 A JP21239881 A JP 21239881A JP 21239881 A JP21239881 A JP 21239881A JP S57132368 A JPS57132368 A JP S57132368A
Authority
JP
Japan
Prior art keywords
regions
fet
gate
region
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21239881A
Other languages
Japanese (ja)
Inventor
Kiyoshi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP21239881A priority Critical patent/JPS57132368A/en
Publication of JPS57132368A publication Critical patent/JPS57132368A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To easily obtain excellent remote cut-off characteristics for the subject semiconductor device by a method wherein two island type regions, on which FET's were provided, are formed on the same semiconductor substrate, and the gate of each FET is electrically connected to the substrate. CONSTITUTION:The two N type island regions 2 and 2' are formed on the P type substrate 1, gate 1 regions 3, 3' and gate 2 regions 4, 4' are formed, and the regions 4 and 4' are electrically connected to the substrate 1. Then, source and drain terminals S and D are led out between regions 3 and 4, and 3' and 4' respectively. Also, the second channel region of the region 4 on gate terminal G2 or FET 1, the first channel region of the region 3, on the gate terminal g' of FET 2, and the second channel region of the region 4' of gate terminal G2 are formed in the same thickness.
JP21239881A 1981-12-29 1981-12-29 Semiconductor device Pending JPS57132368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21239881A JPS57132368A (en) 1981-12-29 1981-12-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21239881A JPS57132368A (en) 1981-12-29 1981-12-29 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP49050664A Division JPS5838944B2 (en) 1974-05-09 1974-05-09 Transistor

Publications (1)

Publication Number Publication Date
JPS57132368A true JPS57132368A (en) 1982-08-16

Family

ID=16621920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21239881A Pending JPS57132368A (en) 1981-12-29 1981-12-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57132368A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084744A (en) * 1987-03-20 1992-01-28 Victor Company Of Japan, Ltd. Field effect transistor with active layer apart from guard-ring
WO2008134691A1 (en) * 2007-05-01 2008-11-06 Dsm Solutions, Inc. Junction-fet-based dram-type storage cell, method of operation, and method of manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084744A (en) * 1987-03-20 1992-01-28 Victor Company Of Japan, Ltd. Field effect transistor with active layer apart from guard-ring
WO2008134691A1 (en) * 2007-05-01 2008-11-06 Dsm Solutions, Inc. Junction-fet-based dram-type storage cell, method of operation, and method of manufacture
US7692220B2 (en) 2007-05-01 2010-04-06 Suvolta, Inc. Semiconductor device storage cell structure, method of operation, and method of manufacture

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