JPS5534413A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS5534413A
JPS5534413A JP10618778A JP10618778A JPS5534413A JP S5534413 A JPS5534413 A JP S5534413A JP 10618778 A JP10618778 A JP 10618778A JP 10618778 A JP10618778 A JP 10618778A JP S5534413 A JPS5534413 A JP S5534413A
Authority
JP
Japan
Prior art keywords
pattern
corners
charged
beams
assuming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10618778A
Other languages
Japanese (ja)
Other versions
JPS6157697B2 (en
Inventor
Hisashi Sugiyama
Kazunori Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP10618778A priority Critical patent/JPS5534413A/en
Publication of JPS5534413A publication Critical patent/JPS5534413A/en
Publication of JPS6157697B2 publication Critical patent/JPS6157697B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:In a charged beam exposure, to use correction charged beams in the vicinities of corners of a pattern thereby to make it possible to form in a high precision an exposed pattern having corners each assuming an angle of less than 180 deg.. CONSTITUTION:The contour of an exposed pattern formed in the case where electron beams are irradiated on a photoresist corresponding to a square pattern is rounded at its four corners due to shortage in irradiation as shown by (c) in the drawing. When correction charged beams not exceeding an allowable charge quantity capable of showing the reaction of the resist are irradiated onto points P1, P2, P3 and P4, both charged beams are overlapped at the corner parts, and a pattern shown by (d) in the drawing is formed. As a result, an exposed pattern having corners each assuming an angle of less than 180 deg. can be formed by use of a charged beam exposing device at a high precision.
JP10618778A 1978-09-01 1978-09-01 Pattern forming method Granted JPS5534413A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10618778A JPS5534413A (en) 1978-09-01 1978-09-01 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10618778A JPS5534413A (en) 1978-09-01 1978-09-01 Pattern forming method

Publications (2)

Publication Number Publication Date
JPS5534413A true JPS5534413A (en) 1980-03-11
JPS6157697B2 JPS6157697B2 (en) 1986-12-08

Family

ID=14427193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10618778A Granted JPS5534413A (en) 1978-09-01 1978-09-01 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS5534413A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745238A (en) * 1980-07-10 1982-03-15 Ibm Method of correcting proximity effect

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745238A (en) * 1980-07-10 1982-03-15 Ibm Method of correcting proximity effect
JPS6219048B2 (en) * 1980-07-10 1987-04-25 Intaanashonaru Bijinesu Mashiinzu Corp

Also Published As

Publication number Publication date
JPS6157697B2 (en) 1986-12-08

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