JPS5652751A - Photomask correcting method - Google Patents

Photomask correcting method

Info

Publication number
JPS5652751A
JPS5652751A JP12864279A JP12864279A JPS5652751A JP S5652751 A JPS5652751 A JP S5652751A JP 12864279 A JP12864279 A JP 12864279A JP 12864279 A JP12864279 A JP 12864279A JP S5652751 A JPS5652751 A JP S5652751A
Authority
JP
Japan
Prior art keywords
layer
photomask
defective part
photoresist
light shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12864279A
Other languages
Japanese (ja)
Other versions
JPS6159506B2 (en
Inventor
Tomihiro Nakada
Akira Kaneki
Koji Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP12864279A priority Critical patent/JPS5652751A/en
Publication of JPS5652751A publication Critical patent/JPS5652751A/en
Publication of JPS6159506B2 publication Critical patent/JPS6159506B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To correct the image defective part of a photomask and effectively utilize resources by forming a photoresist layer on the photomask, selectively exposing the layer and implanting high energy particles into the resulting photoresist image on the defective part while accelerating them. CONSTITUTION:A photoresist is applied to a photomask having inorg. light shielding film pattern 12 including an image defective part, and it is prebaked to form photoresist layer 13. Layer 13 is selectively exposed to form photoresist layer 14 covering the defective part alone, and then desired high energy particles are implanted into layer 14 with predetermined accelerating energy. Thus, layer 14 is hardened, modified, and converted into ion implanted photoresist layer 16. Since layer 16 has high adhesion to glass substrate 9 and inorg. light shielding film 12, superior mechanical strength and light shielding properties, the resulting photomask can be used under conditions similar to those of an ordinary hard mask.
JP12864279A 1979-10-05 1979-10-05 Photomask correcting method Granted JPS5652751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12864279A JPS5652751A (en) 1979-10-05 1979-10-05 Photomask correcting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12864279A JPS5652751A (en) 1979-10-05 1979-10-05 Photomask correcting method

Publications (2)

Publication Number Publication Date
JPS5652751A true JPS5652751A (en) 1981-05-12
JPS6159506B2 JPS6159506B2 (en) 1986-12-16

Family

ID=14989861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12864279A Granted JPS5652751A (en) 1979-10-05 1979-10-05 Photomask correcting method

Country Status (1)

Country Link
JP (1) JPS5652751A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111038A (en) * 1981-12-23 1983-07-01 Matsushita Electronics Corp Photomask correction method
JPS59202864A (en) * 1983-05-04 1984-11-16 Oki Electric Ind Co Ltd Wire dot printing head
FR2547111A1 (en) * 1983-05-31 1984-12-07 American Telephone & Telegraph METHOD FOR CORRECTING LITHOGRAPHIC MASKS
US6399465B1 (en) * 2000-02-24 2002-06-04 United Microelectronics Corp. Method for forming a triple well structure
DE19856295C2 (en) * 1998-02-27 2002-06-20 Fraunhofer Ges Forschung Process for the production of carbon electrodes and chemical field effect transistors and carbon electrodes and chemical field effect transistors produced thereby and their use

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136873A (en) * 1974-09-19 1976-03-27 Nippon Electric Co
JPS51111075A (en) * 1975-03-26 1976-10-01 Nec Corp Photo etching photo mask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136873A (en) * 1974-09-19 1976-03-27 Nippon Electric Co
JPS51111075A (en) * 1975-03-26 1976-10-01 Nec Corp Photo etching photo mask

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111038A (en) * 1981-12-23 1983-07-01 Matsushita Electronics Corp Photomask correction method
JPS59202864A (en) * 1983-05-04 1984-11-16 Oki Electric Ind Co Ltd Wire dot printing head
JPH0429551B2 (en) * 1983-05-04 1992-05-19
FR2547111A1 (en) * 1983-05-31 1984-12-07 American Telephone & Telegraph METHOD FOR CORRECTING LITHOGRAPHIC MASKS
US4548883A (en) * 1983-05-31 1985-10-22 At&T Bell Laboratories Correction of lithographic masks
DE19856295C2 (en) * 1998-02-27 2002-06-20 Fraunhofer Ges Forschung Process for the production of carbon electrodes and chemical field effect transistors and carbon electrodes and chemical field effect transistors produced thereby and their use
US6399465B1 (en) * 2000-02-24 2002-06-04 United Microelectronics Corp. Method for forming a triple well structure

Also Published As

Publication number Publication date
JPS6159506B2 (en) 1986-12-16

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