JPS5741638A - Photomask for electron beam - Google Patents

Photomask for electron beam

Info

Publication number
JPS5741638A
JPS5741638A JP11664480A JP11664480A JPS5741638A JP S5741638 A JPS5741638 A JP S5741638A JP 11664480 A JP11664480 A JP 11664480A JP 11664480 A JP11664480 A JP 11664480A JP S5741638 A JPS5741638 A JP S5741638A
Authority
JP
Japan
Prior art keywords
film
thickness
pattern
soln
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11664480A
Other languages
Japanese (ja)
Other versions
JPS6262336B2 (en
Inventor
Shinya Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11664480A priority Critical patent/JPS5741638A/en
Publication of JPS5741638A publication Critical patent/JPS5741638A/en
Publication of JPS6262336B2 publication Critical patent/JPS6262336B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To accurately form a pattern by an electron beam exposure method and to improve the pattern accuracy of a body to be processed using the pattern by forming an electrically conductive translucent film on a chromium surface.
CONSTITUTION: On a glass substrate 1 metallic Cr 2 is deposited in 500W1,000Å thickness, and on the Cr film 2 a film of indium oxide or tin oxide is formed as an electrically conductive translucent film 5 in 200W500Å thickness. The film 5 is coated with a positive type resist film 4 of PMMA in several 1,000Å thickness, and the desired region is irradiated by scanning electron beams. After the exposure, development, fixing and drying are carried out, and the resist film is cured by heat treatment. The indium oxide film is then removed by dipping in a 10% soln. of hydrochloric acid, and the metallic Cr is removed by etching with a mixed soln. of ammonium ceric nitrate and an aqueous soln. of perchloric acid. The resist mask 4 is finally removed by plasma treatment in gaseous oxygen.
COPYRIGHT: (C)1982,JPO&Japio
JP11664480A 1980-08-25 1980-08-25 Photomask for electron beam Granted JPS5741638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11664480A JPS5741638A (en) 1980-08-25 1980-08-25 Photomask for electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11664480A JPS5741638A (en) 1980-08-25 1980-08-25 Photomask for electron beam

Publications (2)

Publication Number Publication Date
JPS5741638A true JPS5741638A (en) 1982-03-08
JPS6262336B2 JPS6262336B2 (en) 1987-12-25

Family

ID=14692311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11664480A Granted JPS5741638A (en) 1980-08-25 1980-08-25 Photomask for electron beam

Country Status (1)

Country Link
JP (1) JPS5741638A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02103046A (en) * 1988-10-12 1990-04-16 Toshiba Corp Manufacture of mask for producing semiconductor and hard mask blank placing table
JP2005062884A (en) * 2003-08-18 2005-03-10 Samsung Electronics Co Ltd Blank photomask and method for manufacturing photomask using the same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113577A (en) * 1974-06-19 1976-02-03 Western Electric Co
JPS5352073A (en) * 1976-10-22 1978-05-12 Hoya Denshi Kk Photomask for ic
JPS53129637A (en) * 1977-04-19 1978-11-11 Nippon Telegr & Teleph Corp <Ntt> Mask for photoetching
JPS5446479A (en) * 1977-09-20 1979-04-12 Mitsubishi Electric Corp Negative plate for photo mask
JPS5451832A (en) * 1977-09-30 1979-04-24 Konishiroku Photo Ind Co Ltd Photomask material
JPS5451831A (en) * 1977-09-30 1979-04-24 Konishiroku Photo Ind Co Ltd Photomask material
JPS5596951A (en) * 1979-01-17 1980-07-23 Mitsubishi Electric Corp Negative for photomask

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113577A (en) * 1974-06-19 1976-02-03 Western Electric Co
JPS5352073A (en) * 1976-10-22 1978-05-12 Hoya Denshi Kk Photomask for ic
JPS53129637A (en) * 1977-04-19 1978-11-11 Nippon Telegr & Teleph Corp <Ntt> Mask for photoetching
JPS5446479A (en) * 1977-09-20 1979-04-12 Mitsubishi Electric Corp Negative plate for photo mask
JPS5451832A (en) * 1977-09-30 1979-04-24 Konishiroku Photo Ind Co Ltd Photomask material
JPS5451831A (en) * 1977-09-30 1979-04-24 Konishiroku Photo Ind Co Ltd Photomask material
JPS5596951A (en) * 1979-01-17 1980-07-23 Mitsubishi Electric Corp Negative for photomask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02103046A (en) * 1988-10-12 1990-04-16 Toshiba Corp Manufacture of mask for producing semiconductor and hard mask blank placing table
JP2005062884A (en) * 2003-08-18 2005-03-10 Samsung Electronics Co Ltd Blank photomask and method for manufacturing photomask using the same

Also Published As

Publication number Publication date
JPS6262336B2 (en) 1987-12-25

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