JPS5741638A - Photomask for electron beam - Google Patents
Photomask for electron beamInfo
- Publication number
- JPS5741638A JPS5741638A JP11664480A JP11664480A JPS5741638A JP S5741638 A JPS5741638 A JP S5741638A JP 11664480 A JP11664480 A JP 11664480A JP 11664480 A JP11664480 A JP 11664480A JP S5741638 A JPS5741638 A JP S5741638A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thickness
- pattern
- soln
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To accurately form a pattern by an electron beam exposure method and to improve the pattern accuracy of a body to be processed using the pattern by forming an electrically conductive translucent film on a chromium surface.
CONSTITUTION: On a glass substrate 1 metallic Cr 2 is deposited in 500W1,000Å thickness, and on the Cr film 2 a film of indium oxide or tin oxide is formed as an electrically conductive translucent film 5 in 200W500Å thickness. The film 5 is coated with a positive type resist film 4 of PMMA in several 1,000Å thickness, and the desired region is irradiated by scanning electron beams. After the exposure, development, fixing and drying are carried out, and the resist film is cured by heat treatment. The indium oxide film is then removed by dipping in a 10% soln. of hydrochloric acid, and the metallic Cr is removed by etching with a mixed soln. of ammonium ceric nitrate and an aqueous soln. of perchloric acid. The resist mask 4 is finally removed by plasma treatment in gaseous oxygen.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11664480A JPS5741638A (en) | 1980-08-25 | 1980-08-25 | Photomask for electron beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11664480A JPS5741638A (en) | 1980-08-25 | 1980-08-25 | Photomask for electron beam |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5741638A true JPS5741638A (en) | 1982-03-08 |
JPS6262336B2 JPS6262336B2 (en) | 1987-12-25 |
Family
ID=14692311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11664480A Granted JPS5741638A (en) | 1980-08-25 | 1980-08-25 | Photomask for electron beam |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5741638A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02103046A (en) * | 1988-10-12 | 1990-04-16 | Toshiba Corp | Manufacture of mask for producing semiconductor and hard mask blank placing table |
JP2005062884A (en) * | 2003-08-18 | 2005-03-10 | Samsung Electronics Co Ltd | Blank photomask and method for manufacturing photomask using the same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5113577A (en) * | 1974-06-19 | 1976-02-03 | Western Electric Co | |
JPS5352073A (en) * | 1976-10-22 | 1978-05-12 | Hoya Denshi Kk | Photomask for ic |
JPS53129637A (en) * | 1977-04-19 | 1978-11-11 | Nippon Telegr & Teleph Corp <Ntt> | Mask for photoetching |
JPS5446479A (en) * | 1977-09-20 | 1979-04-12 | Mitsubishi Electric Corp | Negative plate for photo mask |
JPS5451832A (en) * | 1977-09-30 | 1979-04-24 | Konishiroku Photo Ind Co Ltd | Photomask material |
JPS5451831A (en) * | 1977-09-30 | 1979-04-24 | Konishiroku Photo Ind Co Ltd | Photomask material |
JPS5596951A (en) * | 1979-01-17 | 1980-07-23 | Mitsubishi Electric Corp | Negative for photomask |
-
1980
- 1980-08-25 JP JP11664480A patent/JPS5741638A/en active Granted
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5113577A (en) * | 1974-06-19 | 1976-02-03 | Western Electric Co | |
JPS5352073A (en) * | 1976-10-22 | 1978-05-12 | Hoya Denshi Kk | Photomask for ic |
JPS53129637A (en) * | 1977-04-19 | 1978-11-11 | Nippon Telegr & Teleph Corp <Ntt> | Mask for photoetching |
JPS5446479A (en) * | 1977-09-20 | 1979-04-12 | Mitsubishi Electric Corp | Negative plate for photo mask |
JPS5451832A (en) * | 1977-09-30 | 1979-04-24 | Konishiroku Photo Ind Co Ltd | Photomask material |
JPS5451831A (en) * | 1977-09-30 | 1979-04-24 | Konishiroku Photo Ind Co Ltd | Photomask material |
JPS5596951A (en) * | 1979-01-17 | 1980-07-23 | Mitsubishi Electric Corp | Negative for photomask |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02103046A (en) * | 1988-10-12 | 1990-04-16 | Toshiba Corp | Manufacture of mask for producing semiconductor and hard mask blank placing table |
JP2005062884A (en) * | 2003-08-18 | 2005-03-10 | Samsung Electronics Co Ltd | Blank photomask and method for manufacturing photomask using the same |
Also Published As
Publication number | Publication date |
---|---|
JPS6262336B2 (en) | 1987-12-25 |
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