JPS5621328A - Method of making pattern - Google Patents

Method of making pattern

Info

Publication number
JPS5621328A
JPS5621328A JP9766179A JP9766179A JPS5621328A JP S5621328 A JPS5621328 A JP S5621328A JP 9766179 A JP9766179 A JP 9766179A JP 9766179 A JP9766179 A JP 9766179A JP S5621328 A JPS5621328 A JP S5621328A
Authority
JP
Japan
Prior art keywords
substance
dry etching
mask
substrate
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9766179A
Other languages
Japanese (ja)
Inventor
Kazumasa Shigematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9766179A priority Critical patent/JPS5621328A/en
Publication of JPS5621328A publication Critical patent/JPS5621328A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To enable accurate dry etching, by effecting exposure to radiation of wavelength not longer than that of far ultraviolet rays to make the pattern for a mask stable to the dry etching. CONSTITUTION:A substance 2, which is adhesive and has a desired etching rate, is coated on a substrate 1. A substance 3, which has a lower etching rate than the former substance 2 and is photosensitive to the radiation of wavelength not longer than that of far ultraviolet rays, is coated on the substance 2. Radiation 4 of wavelength not longer than that of far ultraviolet rays is projected to the substance 3 and development is effected to make the prescribed pattern an the substance 3. The substance 3 is then used as a mask to perform the dry etching of the substance 2. Both the substances are then used as a mask to perform the dry etching of the substrate 1 to make the pattern thereon. since the film thickness of the mask is very small, resolving power for the dry etching of the substrate 1 is enhanced very much. Since the mask for the dry etching of the substrate is stable, the accuracy of the etching is high.
JP9766179A 1979-07-31 1979-07-31 Method of making pattern Pending JPS5621328A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9766179A JPS5621328A (en) 1979-07-31 1979-07-31 Method of making pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9766179A JPS5621328A (en) 1979-07-31 1979-07-31 Method of making pattern

Publications (1)

Publication Number Publication Date
JPS5621328A true JPS5621328A (en) 1981-02-27

Family

ID=14198239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9766179A Pending JPS5621328A (en) 1979-07-31 1979-07-31 Method of making pattern

Country Status (1)

Country Link
JP (1) JPS5621328A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124940A (en) * 1983-12-12 1985-07-04 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming ultrafine pattern of dry positive tone
JPH01309054A (en) * 1988-06-07 1989-12-13 Mitsubishi Electric Corp Formation of fine pattern
US6444402B1 (en) 2000-03-21 2002-09-03 International Business Machines Corporation Method of making differently sized vias and lines on the same lithography level

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5255869A (en) * 1975-11-01 1977-05-07 Fujitsu Ltd Production of semiconductor device
JPS5389673A (en) * 1977-01-19 1978-08-07 Oki Electric Ind Co Ltd Fine pattern forming method of semiconductor device
JPS54372A (en) * 1977-05-31 1979-01-05 Takashi Fujimura Piston type conveyor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5255869A (en) * 1975-11-01 1977-05-07 Fujitsu Ltd Production of semiconductor device
JPS5389673A (en) * 1977-01-19 1978-08-07 Oki Electric Ind Co Ltd Fine pattern forming method of semiconductor device
JPS54372A (en) * 1977-05-31 1979-01-05 Takashi Fujimura Piston type conveyor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124940A (en) * 1983-12-12 1985-07-04 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming ultrafine pattern of dry positive tone
JPH0376743B2 (en) * 1983-12-12 1991-12-06 Intaanashonaru Bijinesu Mashiinzu Corp
JPH01309054A (en) * 1988-06-07 1989-12-13 Mitsubishi Electric Corp Formation of fine pattern
US6444402B1 (en) 2000-03-21 2002-09-03 International Business Machines Corporation Method of making differently sized vias and lines on the same lithography level

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