JPS5556629A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS5556629A
JPS5556629A JP12907078A JP12907078A JPS5556629A JP S5556629 A JPS5556629 A JP S5556629A JP 12907078 A JP12907078 A JP 12907078A JP 12907078 A JP12907078 A JP 12907078A JP S5556629 A JPS5556629 A JP S5556629A
Authority
JP
Japan
Prior art keywords
pattern
resist
width
exposure
size smaller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12907078A
Other languages
Japanese (ja)
Other versions
JPS621246B2 (en
Inventor
Kunimitsu Fujiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP12907078A priority Critical patent/JPS5556629A/en
Publication of JPS5556629A publication Critical patent/JPS5556629A/en
Publication of JPS621246B2 publication Critical patent/JPS621246B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To obtain a resist pattern in high accuracy for a short time, by collectively preparing a pattern, which is a size smaller than fixed dimensions, by exposure when forming the resist pattern, and by additionally preparing a pattern in a peripheral portion needing precision by exposure by electron beams.
CONSTITUTION: When preparing a resist pattern 21, which width is a and which consists of a square AWD, a resist pattern 31 is first prepared by collectively exposing a mask of a square A'WD' with width c, which is a size smaller than the pattern 21. In this case, the relationship of a=2b+c, c≥d is formed among width a and c, contraction allowance b and photo-exposure minimum dimensions d, and a pattern in c<d is not used. Thus, a pattern 31', which is a size smaller than the pattern 21, is left on a substrate 10, and the peripheral portion is coated with a resist 50 for electron rays and pre-baked. And the precise pattern consisting of AWD, which buries the circumference 51 of the pattern 31', is gained by exposing the resist 50 by electron rays and by developing the resist.
COPYRIGHT: (C)1980,JPO&Japio
JP12907078A 1978-10-21 1978-10-21 Pattern forming method Granted JPS5556629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12907078A JPS5556629A (en) 1978-10-21 1978-10-21 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12907078A JPS5556629A (en) 1978-10-21 1978-10-21 Pattern forming method

Publications (2)

Publication Number Publication Date
JPS5556629A true JPS5556629A (en) 1980-04-25
JPS621246B2 JPS621246B2 (en) 1987-01-12

Family

ID=15000328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12907078A Granted JPS5556629A (en) 1978-10-21 1978-10-21 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS5556629A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839015A (en) * 1981-09-01 1983-03-07 Pioneer Electronic Corp Manufacture of semiconductor device
JPS59117214A (en) * 1982-12-20 1984-07-06 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming exposure pattern by electron beam and light
US4520269A (en) * 1982-11-03 1985-05-28 International Business Machines Corporation Electron beam lithography proximity correction method
US4610948A (en) * 1984-01-25 1986-09-09 The United States Of America As Represented By The Secretary Of The Army Electron beam peripheral patterning of integrated circuits
WO2006129374A1 (en) * 2005-06-03 2006-12-07 Advantest Corporation Patterning method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839015A (en) * 1981-09-01 1983-03-07 Pioneer Electronic Corp Manufacture of semiconductor device
US4520269A (en) * 1982-11-03 1985-05-28 International Business Machines Corporation Electron beam lithography proximity correction method
JPS59117214A (en) * 1982-12-20 1984-07-06 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming exposure pattern by electron beam and light
US4610948A (en) * 1984-01-25 1986-09-09 The United States Of America As Represented By The Secretary Of The Army Electron beam peripheral patterning of integrated circuits
WO2006129374A1 (en) * 2005-06-03 2006-12-07 Advantest Corporation Patterning method
JPWO2006129374A1 (en) * 2005-06-03 2008-12-25 株式会社アドバンテスト Patterning method
JP4533931B2 (en) * 2005-06-03 2010-09-01 株式会社アドバンテスト Patterning method

Also Published As

Publication number Publication date
JPS621246B2 (en) 1987-01-12

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